Vishay Siliconix Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerVishay Siliconix
Datensätze 3.936
Seite 61/132
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 500V 19A TO-247AC |
4.770 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 19A (Tc) | 10V | 184mOhm @ 10A, 10V | 4V @ 250µA | 92nC @ 10V | ±30V | 1640pF @ 100V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO220AB |
8.694 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86nC @ 10V | ±30V | 1920pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO220AB |
2.952 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86nC @ 10V | ±30V | 1920pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 21A D2PAK TO263 |
8.190 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 176mOhm @ 11A, 10V | 4V @ 250µA | 84nC @ 10V | ±30V | 2030pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AB (D²PAK) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO247AC |
8.154 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86nC @ 10V | ±30V | 1920pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 15A TO-247AC |
6.156 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 15A (Tc) | 10V | 280mOhm @ 9A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1400pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 22A D2PAK |
8.064 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 110nC @ 10V | ±30V | 2415pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 22A TO-247AC |
2.772 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 230mOhm @ 11A, 10V | 5V @ 250µA | 98nC @ 10V | ±30V | 1938pF @ 100V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 33A TO-220-3 |
7.452 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 33A (Tc) | 10V | 98mOhm @ 16.5A, 10V | 4V @ 250µA | 155nC @ 10V | ±30V | 3454pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 29A POWERPAK8 |
4.626 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 98mOhm @ 14A, 10V | 5V @ 250µA | 129nC @ 10V | ±30V | 2614pF @ 100V | - | 202W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 600V 11A TO-247AC |
6.372 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 600mOhm @ 6A, 10V | 4V @ 250µA | 140nC @ 10V | ±20V | 2700pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 22A TO-247AC |
5.328 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 280mOhm @ 13A, 10V | 5V @ 250µA | 150nC @ 10V | ±30V | 3570pF @ 25V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET P-CH 12V 2.9A 4-MICROFOOT |
7.038 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 2.9A (Ta) | 1.5V, 3.7V | 80mOhm @ 1.5A, 3.7V | 900mV @ 250µA | 17nC @ 8V | ±8V | 650pF @ 6V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-MICRO FOOT® (0.8x0.8) | 4-XFBGA |
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Vishay Siliconix |
MOSFET P-CHANNEL 12V 8A 6TSOP |
4.248 |
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TrenchFET® Gen III | P-Channel | MOSFET (Metal Oxide) | 12V | 8A (Tc) | 1.8V, 4.5V | 17.8mOhm @ 8.7A, 4.5V | 1V @ 250µA | 57nC @ 8V | ±8V | 1975pF @ 6V | - | 3.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET P-CH 30-V PWRPAK SC-70 |
8.298 |
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TrenchFET® Gen IV | P-Channel | MOSFET (Metal Oxide) | 30V | 10.6A (Ta), 12A (Tc) | 4.5V, 10V | 20mOhm @ 5A, 10V | 2.5V @ 250µA | 26nC @ 10V | +16V, -20V | 950pF @ 15V | - | 3.4W (Ta), 17.9W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Vishay Siliconix |
MOSFET P-CH 20V 12A SC70-6 |
7.020 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 12A (Tc) | 2.5V, 4.5V | 16.7mOhm @ 7A, 4.5V | 1.2V @ 250µA | 69nC @ 10V | ±12V | 2180pF @ 10V | - | 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Vishay Siliconix |
MOSFET N-CH 30-V PWRPAK SO-8 |
2.376 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta), 40A (Tc) | 4.5V, 10V | 6.83mOhm @ 10A, 10V | 2.4V @ 250µA | 19nC @ 10V | +20V, -16V | 680pF @ 15V | - | 3.8W (Ta), 17W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 60V 1.6A SC70-6 |
8.730 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 1.7A (Tc) | 4.5V, 10V | 120mOhm @ 3.8A, 10V | 2.5V @ 250µA | 5.5nC @ 10V | ±20V | 344pF @ 15V | - | 3.3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | SC-70-6 | 6-TSSOP, SC-88, SOT-363 |
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Vishay Siliconix |
MOSFET N-CH 30V PP SO-8 |
6.192 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 70A (Tc) | 4.5V, 10V | 4.6mOhm @ 15A, 10V | 2.4V @ 250µA | 32nC @ 10V | +20V, -16V | 1050pF @ 15V | - | 3.7W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CHAN 20V POWERPAK SC-70 |
8.136 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 2.68A (Tc) | 2.5V, 4.5V | 113mOhm @ 2A, 4.5V | 1.5V @ 250µA | 5.3nC @ 4.5V | ±8V | 375pF @ 10V | - | 13.6W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Vishay Siliconix |
MOSFET P-CHAN 40V |
8.262 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 10A (Tc) | 4.5V, 10V | 35mOhm @ 5A, 10V | 2.5V @ 250µA | 33nC @ 10V | ±20V | 1815pF @ 25V | - | 13.6W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Vishay Siliconix |
MOSFET N-CH 30 V PWRPAK SO-8 |
8.802 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta), 40A (Tc) | 4.5V, 10V | 6.83mOhm @ 10A, 10V | 2.4V @ 250µA | 19nC @ 10V | +20V, -16V | 680pF @ 15V | - | 3.8W (Ta), 17W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
P-CHANNEL 30-V (D-S) MOSFET TSOP |
3.438 |
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TrenchFET® Gen IV | P-Channel | MOSFET (Metal Oxide) | 30V | 6.4A (Ta), 8A (Tc) | 4.5V, 10V | 31.2mOhm @ 5A, 10V | 2.2V @ 250µA | 14.5nC @ 10V | +16V, -20V | 580pF @ 15V | - | 2W (Ta), 3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET N-CH 20V 6A SC-75-6 |
7.380 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 6A (Tc) | 2.5V, 4.5V | 46mOhm @ 3.9A, 4.5V | 1.4V @ 250µA | 12nC @ 10V | ±12V | 350pF @ 10V | - | 1.95W (Ta), 10W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-75-6L Single | PowerPAK® SC-75-6L |
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Vishay Siliconix |
MOSFET P-CH 30V PPAK SC-70-6L |
2.970 |
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TrenchFET® Gen IV | P-Channel | MOSFET (Metal Oxide) | 30V | 12.9A (Ta), 30.3A (Tc) | 4.5V, 10V | 14mOhm @ 10A, 10V | 2.5V @ 250µA | 27.8nC @ 10V | +16V, -20V | 1170pF @ 15V | - | 3.5W (Ta), 19.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Vishay Siliconix |
MOSFET N-CH 30V PP 1212-8 |
5.274 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 19.7A (Ta), 20A (Tc) | 4.5V, 10V | 5.1mOhm @ 10A, 10V | 2.2V @ 250µA | 29nC @ 10V | +20V, -16V | 1450pF @ 15V | - | 3.57W (Ta), 26.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8SH | PowerPAK® 1212-8SH |
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Vishay Siliconix |
MOSFET N-CHAN 40 V POWERPAK 1212 |
8.154 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 40V | 31.7A (Ta), 109A (Tc) | 4.5V, 10V | 2.65mOhm @ 15A, 10V | 2.4V @ 250µA | 61nC @ 10V | +20V, -16V | 3030pF @ 20V | - | 4.8W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S (3.3x3.3) | PowerPAK® 1212-8S |
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Vishay Siliconix |
MOSFET N-CHAN 100V POWERPAK 1212 |
8.280 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 100V | 5.2A (Ta), 14.2A (Tc) | 7.5V, 10V | 54mOhm @ 4A, 10V | 4V @ 250µA | 13nC @ 10V | ±20V | 550pF @ 50V | - | 3.2W (Ta), 24W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET P-CH 30-V (D-S) SO-8 |
3.562 |
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TrenchFET® Gen IV | P-Channel | MOSFET (Metal Oxide) | 30V | 12.7A (Ta), 18.3A (Tc) | 4.5V, 10V | 9.5mOhm @ 10A, 10V | 2.2V @ 250µA | 41nC @ 10V | +16V, -20V | 1620pF @ 15V | - | 2.3W (Ta), 4.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CHAN 25V |
5.184 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 25V | 20.1A (Ta), 40A (Tc) | 4.5V, 10V | 5.6mOhm @ 15A, 10V | 2.5V @ 250µA | 24nC @ 10V | +16V, -12V | 1090pF @ 12.5V | - | 3.5W (Ta), 19.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |