Vishay Siliconix Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerVishay Siliconix
Datensätze 3.936
Seite 28/132
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 30V |
48.768 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 60A (Tc) | 4.5V, 10V | 2.7mOhm @ 15A, 10V | 2.1V @ 250µA | 58nC @ 10V | +20V, -16V | 2455pF @ 15V | Schottky Diode (Body) | 5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 30V |
21.762 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 27.6A (Ta), 40A (Tc) | 4.5V, 10V | 2.7mOhm @ 15A, 10V | 2.1V @ 250µA | 58nC @ 10V | +20V, -16V | 2455pF @ 15V | - | 3.7W (Ta), 46.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET P-CH 30V 17.3A 8-SO |
26.616 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 17.3A (Ta) | 4.5V, 10V | 6.5mOhm @ 13A, 10V | 2.8V @ 250µA | 153nC @ 10V | ±25V | 4620pF @ 15V | - | 3.1W (Ta), 6.9W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 50A POWERPAKSO-8 |
50.310 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2.3mOhm @ 15A, 10V | 2.2V @ 1mA | 66nC @ 10V | +20V, -16V | - | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 60V SO-8 |
19.944 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 60V | 8.4A (Ta), 11.3A (Tc) | 4.5V, 10V | 19.5mOhm @ 10A, 10V | 2.8V @ 250µA | 17nC @ 10V | ±20V | 790pF @ 30V | - | 2.5W (Ta), 4.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 40V 60A POWERPAKSO-8 |
55.380 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 2.65mOhm @ 15A, 10V | 2.4V @ 250µA | 75nC @ 10V | +20V, -16V | 3750pF @ 20V | - | 27.7W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 12V 16A POWERPAK1212 |
23.352 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 16A (Tc) | 2.5V, 4.5V | 20mOhm @ 13.5A, 4.5V | 1V @ 250µA | 75nC @ 8V | ±8V | 2650pF @ 6V | - | 39W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CHAN 60V POWERPAK 1212- |
26.580 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 60V | 9.8A (Ta), 16A (Tc) | 7.5V, 10V | 18.5mOhm @ 4A, 10V | 4V @ 250µA | 13.5nC @ 10V | ±20V | 540pF @ 30V | - | 3.2W (Ta), 24W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S (3.3x3.3) | PowerPAK® 1212-8S |
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Vishay Siliconix |
MOSFET P-CH 20V 5A 6-TSOP |
28.128 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 5A (Ta) | 4.5V, 10V | 30mOhm @ 6.7A, 10V | 3V @ 250µA | 30nC @ 10V | ±20V | - | - | 1.14W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET N-CHAN PPAK 1212-8SH |
27.528 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 22A (Ta), 35A (Tc) | 4.5V, 10V | 4.8mOhm @ 20A, 10V | 2.5V @ 250µA | 41nC @ 10V | ±20V | 1600pF @ 10V | - | 3.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8SH | PowerPAK® 1212-8SH |
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Vishay Siliconix |
MOSFET P-CHAN 30V POWERPAK 1212- |
21.624 |
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TrenchFET® Gen III | P-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 5.5mOhm @ 15A, 10V | 2.5V @ 250µA | 111nC @ 10V | ±25V | 4380pF @ 15V | - | 65.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S (3.3x3.3) | PowerPAK® 1212-8S |
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Vishay Siliconix |
MOSFET N-CH 60V PPAK SO-8L |
27.006 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 60V | 23A (Ta), 79.4A (Tc) | 6V, 10V | 4.5mOhm @ 15A, 10V | 3.6V @ 250µA | 37nC @ 10V | ±20V | 1710pF @ 30V | - | 5W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 11A 8-SOIC |
22.842 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 7mOhm @ 16A, 10V | 2.5V @ 250µA | 18nC @ 4.5V | ±20V | - | - | 1.47W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 250V POWERPAK 1212 |
25.488 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 3.4A (Ta), 12.3A (Tc) | 7.5V, 10V | 173mOhm @ 3.6A, 10V | 4V @ 250µA | 16nC @ 10V | ±20V | 350pF @ 125V | - | 5.1W (Ta), 65.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S (3.3x3.3) | PowerPAK® 1212-8S |
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Vishay Siliconix |
MOSFET N-CHAN 200V POWERPAK SO-8 |
26.052 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | - | 7.5V, 10V | 50mOhm @ 10A, 10V | 3.1V @ 250µA | 19.5nC @ 10V | - | 1110pF @ 100V | - | - | -55°C ~ 125°C | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 30V POWERPAK SO-8 |
24.822 |
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TrenchFET® Gen IV | P-Channel | MOSFET (Metal Oxide) | 30V | 26A (Ta), 60A (Tc) | 4.5V, 10V | 4.9mOhm @ 15A, 10V | 2.2V @ 250µA | 112nC @ 10V | +16V, -20V | 3490pF @ 15V | - | 5W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 60V POWERPAK SO-8 |
28.500 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 60V | 10.3A (Ta), 12A (Tc) | 4.5V, 10V | 19.5mOhm @ 10A, 10V | 2.8V @ 250µA | 17nC @ 10V | ±20V | 790pF @ 30V | - | 3.6W (Ta), 35.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 100A POWERPAKSO |
28.146 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 0.8mOhm @ 20A, 10V | 2V @ 250µA | 153nC @ 10V | +20V, -16V | 10180pF @ 15V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CHANNEL 30V 15A 8SOIC |
19.656 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 15A (Tc) | 4.5V, 10V | 18mOhm @ 8A, 10V | 2.5V @ 250µA | 58nC @ 10V | ±20V | 2170pF @ 15V | - | 6.8W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 150V 2.17A 1212-8 |
24.258 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 2.17A (Tc) | 6V, 10V | 1.2Ohm @ 500mA, 10V | 4.5V @ 250µA | 12nC @ 10V | ±20V | 510pF @ 25V | - | 3.2W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 8.9A 8-SOIC |
24.366 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.9A (Ta) | 4.5V, 10V | 11mOhm @ 12A, 10V | 3V @ 250µA | 38nC @ 10V | ±20V | 1580pF @ 15V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 60A POWERPAKSO-8 |
27.414 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 1.1mOhm @ 15A, 10V | 2.4V @ 250µA | 111nC @ 10V | +20V, -16V | 5060pF @ 15V | Schottky Diode (Body) | 54.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CHANNEL 30V 40A 1212-8S |
72.342 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.1mOhm @ 10A, 10V | 2.2V @ 250µA | 68nC @ 10V | +20V, -16V | 3420pF @ 15V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S (3.3x3.3) | PowerPAK® 1212-8S |
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Vishay Siliconix |
MOSFET P-CH 20V 4.8A 2X2 4-MFP |
24.528 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 4.8A (Ta) | 2.5V, 4.5V | 48mOhm @ 1A, 4.5V | 1.4V @ 250µA | 21nC @ 4.5V | ±12V | - | - | 1.47W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-XFBGA, CSPBGA |
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Vishay Siliconix |
MOSFET N-CH 200V 2.6A DPAK |
25.062 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 2.6A (Tc) | 10V | 1.5Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 32A PPAK SO-8 |
27.888 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 60V 21.4A TO252 |
25.116 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 21.4A (Tc) | 4.5V, 10V | 31mOhm @ 15A, 10V | 3V @ 250µA | 17nC @ 10V | ±20V | 670pF @ 25V | - | 5.7W (Ta), 31.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CHAN 30V |
24.354 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 51.4A (Ta), 80A (Tc) | 4.5V, 10V | 1.2mOhm @ 15A, 10V | 2.2V @ 250µA | 93nC @ 10V | +16V, -12V | 4460pF @ 15V | - | 5.2W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 250V 2.2A DPAK |
29.106 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 2.2A (Tc) | 10V | 2Ohm @ 1.3A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 30V 6.4A PPAK 1212-8 |
92.706 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 6.4A (Ta) | 4.5V, 10V | 25mOhm @ 9.8A, 10V | 3V @ 250µA | 40nC @ 10V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |