Vishay Siliconix Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerVishay Siliconix
Datensätze 3.936
Seite 25/132
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 600V 15A TO220AB |
21.684 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 78nC @ 10V | ±30V | 1350pF @ 100V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 40V 120A TO220AB |
8.148 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 1.8mOhm @ 30A, 10V | 2.5V @ 250µA | 230nC @ 10V | ±20V | 11155pF @ 30V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK |
17.046 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4V, 5V | 28mOhm @ 31A, 5V | 2V @ 250µA | 66nC @ 5V | ±10V | 3300pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 15A TO220 FULLP |
21.348 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 78nC @ 10V | ±30V | 1350pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 800V 4.1A D2PAK |
17.520 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 15A TO247AC |
8.112 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 78nC @ 10V | ±30V | 1350pF @ 100V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 14A TO-220AB |
16.962 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 450mOhm @ 8.4A, 10V | 4V @ 250µA | 81nC @ 10V | ±30V | 1910pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 800V 5.4A TO-247AC |
7.848 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 5.4A (Tc) | 10V | 2Ohm @ 3.2A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 1900pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 11A TO-262 |
16.464 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 550mOhm @ 6.6A, 10V | 4V @ 250µA | 51nC @ 10V | ±30V | 1426pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CHANNEL 600V 20A TO220 |
15.732 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 96nC @ 10V | ±30V | 1451pF @ 100V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 400V 25A TO-247AC |
12.144 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 25A (Tc) | 10V | 170mOhm @ 13A, 10V | 5V @ 250µA | 88nC @ 10V | ±30V | 1707pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 25A TO-247AC |
6.648 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 25A (Tc) | 10V | 170mOhm @ 13A, 10V | 5V @ 250µA | 88nC @ 10V | ±30V | 1707pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 20A TO220AB |
15.540 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 96nC @ 10V | ±30V | 1451pF @ 100V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 5.1A TO220FP |
7.896 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 5.1A (Tc) | 10V | 930mOhm @ 3.1A, 10V | 4V @ 250µA | 48nC @ 10V | ±30V | 1417pF @ 25V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 600V 20A D2PAK |
13.464 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 96nC @ 10V | ±30V | 1451pF @ 100V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO-220AB |
17.196 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 176mOhm @ 11A, 10V | 4V @ 250µA | 84nC @ 10V | ±30V | 2030pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO-220 FP |
23.088 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 176mOhm @ 11A, 10V | 4V @ 250µA | 84nC @ 10V | ±30V | 2030pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 20A TO247AC |
9.768 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 96nC @ 10V | ±30V | 1451pF @ 100V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 21A D2PAK |
7.812 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86nC @ 10V | ±30V | 1920pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 5.5A TO220FP |
18.756 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 5.5A (Tc) | 10V | 750mOhm @ 3.3A, 10V | 4V @ 250µA | 49nC @ 10V | ±30V | 1400pF @ 25V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
21.276 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 42nC @ 10V | ±30V | 1036pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
18.528 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1300pF @ 25V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 23A TO247AC |
16.932 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 23A (Tc) | 10V | 158mOhm @ 12A, 10V | 4V @ 250µA | 95nC @ 10V | ±30V | 2418pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TA) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 12A TO-220AB |
11.136 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 555mOhm @ 4A, 10V | 5V @ 250µA | 48nC @ 10V | ±30V | 1375pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CHANNEL 600V 25A TO220 |
23.076 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 146mOhm @ 12.5A, 10V | 5V @ 250µA | 75nC @ 10V | ±30V | 2274pF @ 100V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 25A TO220AB |
20.280 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 146mOhm @ 12.5A, 10V | 5V @ 250µA | 75nC @ 10V | ±30V | 2274pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 1000V 4.3A TO-247AC |
8.976 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 4.3A (Tc) | 10V | 3.5Ohm @ 2.6A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 1600pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 800V 15A TO220AB |
20.508 |
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E | N-Channel | MOSFET (Metal Oxide) | 800V | 15A (Tc) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 250µA | 122nC @ 10V | ±30V | 2408pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 22A POWERPAK8 |
28.668 |
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E | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 147mOhm @ 10A, 10V | 4V @ 250µA | 84nC @ 10V | ±30V | 2063pF @ 100V | - | 174W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 400V 11A TO-247AC |
9.264 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 11A (Tc) | 10V | 550mOhm @ 6.6A, 10V | 4V @ 250µA | 62nC @ 10V | ±20V | 1400pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |