Vishay Siliconix Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerVishay Siliconix
Datensätze 3.936
Seite 23/132
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 600V 6.2A TO-220AB |
16.524 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 1100pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 22A TO-247AC |
31.398 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 230mOhm @ 13A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | 3450pF @ 25V | - | 277W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 23A TO-247AC |
6.180 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 23A (Tc) | 10V | 200mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | ±30V | 3400pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 40A TO220AB |
12.606 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 40A (Tc) | 6V, 10V | 60mOhm @ 20A, 10V | 4V @ 250µA | 140nC @ 10V | ±30V | 5000pF @ 25V | - | 3.75W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 150V 85A TO220AB |
12.516 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 85A (Tc) | 10V | 21mOhm @ 30A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 4750pF @ 25V | - | 2.4W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 46A TO-247AC |
7.344 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 46A (Tc) | 10V | 55mOhm @ 28A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 5200pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 24A D2PAK |
20.316 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | ±30V | 2740pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 650V 24A D2PAK |
40.734 |
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E | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 156mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | ±30V | 2774pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 16A TO-220AB |
27.228 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 320mOhm @ 9.9A, 10V | 5V @ 250µA | 130nC @ 10V | ±30V | 2760pF @ 25V | - | 220W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 33A TO-220AB |
16.518 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150nC @ 10V | ±30V | 3508pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 29A TO220 |
17.736 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130nC @ 10V | ±30V | 2600pF @ 100V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 33A TO-263 |
61.878 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150nC @ 10V | ±30V | 3508pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 31A TO-247AC |
9.720 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 31A (Tc) | 10V | 180mOhm @ 19A, 10V | 5V @ 250µA | 210nC @ 10V | ±30V | 5000pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 29A TO247AC |
9.000 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130nC @ 10V | ±30V | 2600pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 16A TO-247AC |
15.288 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 320mOhm @ 9.9A, 10V | 5V @ 250µA | 130nC @ 10V | ±30V | 2760pF @ 25V | - | 220W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 33A TO-263 |
28.710 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 33A (Tc) | 10V | 98mOhm @ 16.5A, 10V | 4V @ 250µA | 155nC @ 10V | ±30V | 3454pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 400V 16A TO-247AC |
6.324 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 16A (Tc) | 10V | 300mOhm @ 9.6A, 10V | 4V @ 250µA | 76nC @ 10V | ±30V | 2200pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 32.4A TO-247AC |
16.188 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 32.4A (Tc) | 10V | 105mOhm @ 16.5A, 10V | 4V @ 250µA | 173nC @ 10V | ±30V | 4040pF @ 100V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 40A TO247AC |
8.796 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 40A (Tc) | 10V | 75mOhm @ 20A, 10V | 4V @ 250µA | 197nC @ 10V | ±30V | 4436pF @ 100V | - | 329W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 14A TO-247AC |
7.650 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 400mOhm @ 8.4A, 10V | 4V @ 250µA | 74nC @ 10V | ±30V | 2200pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 40A TO220AB |
20.544 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 40A (Tc) | 10V | 65mOhm @ 16A, 10V | 5V @ 250µA | 98nC @ 10V | ±30V | 2700pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO-247AC |
6.552 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 320mOhm @ 13A, 10V | 5V @ 250µA | 150nC @ 10V | ±30V | 4000pF @ 25V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 23A TO-247AC |
20.448 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 23A (Tc) | 10V | 235mOhm @ 14A, 10V | 5V @ 250µA | 150nC @ 10V | ±30V | 3600pF @ 25V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 32A TO-247AC |
8.844 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 32A (Tc) | 10V | 160mOhm @ 32A, 10V | 5V @ 250µA | 190nC @ 10V | ±30V | 5280pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 43A TO247AC |
8.982 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 43A (Tc) | 10V | 65mOhm @ 24A, 10V | 4V @ 250µA | 182nC @ 10V | ±30V | 3600pF @ 100V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 47A TO-247AD |
9.684 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 64mOhm @ 24A, 10V | 4V @ 250µA | 220nC @ 10V | ±20V | 9620pF @ 100V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-3P-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 26A TO-247AC |
14.820 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 26A (Tc) | 10V | 250mOhm @ 16A, 10V | 5V @ 250µA | 180nC @ 10V | ±30V | 5020pF @ 25V | - | 470W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 80A TO247AC |
10.152 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 80A (Tc) | 10V | 30mOhm @ 40A, 10V | 4V @ 250µA | 443nC @ 10V | ±30V | 6900pF @ 100V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET P-CH 30V 2.5A SOT23-3 |
50.238 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 10V | 78mOhm @ 3.2A, 10V | 3V @ 250µA | 15nC @ 10V | ±20V | 380pF @ 15V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 4.8A DPAK |
25.104 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 4.8A (Tc) | 10V | 800mOhm @ 2.9A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |