Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 937/999
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Renesas Electronics America |
MOSFET N-CH 600V 11A TO220 |
7.578 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Ta) | 10V | 575mOhm @ 8A, 10V | - | 45nC @ 10V | ±30V | 1800pF @ 25V | - | 150W (Tc) | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Renesas Electronics America |
MOSFET N-CH 600V 0.4A LDPAK |
3.222 |
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Renesas Electronics America |
MOSFET N-CH |
2.124 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 2.4A (Ta) | 2.5V, 4.5V | 270mOhm @ 1.2A, 4.5V | - | 2nC @ 4.5V | ±12V | 170pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | UPAK | TO-243AA |
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Renesas Electronics America |
MOSFET P-CH 30V 30A 8HVSON |
2.286 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 4.8mOhm @ 30A, 10V | - | 100nC @ 10V | ±20V | 3740pF @ 10V | - | 1.5W (Ta), 52W (Tc) | 150°C (TJ) | Surface Mount | 8-HVSON (3x3.3) | 8-PowerVDFN |
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Renesas Electronics America |
MOSFET P-CH 30V 27A 8HVSON |
4.788 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 27A (Tc) | - | 6.2mOhm @ 27A, 10V | - | 80nC @ 10V | - | 3130pF @ 10V | - | 1.5W (Ta), 52W (Tc) | - | Surface Mount | 8-HVSON (3x3.3) | 8-PowerVDFN |
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Nexperia |
MOSFET N-CH 55V 5.5A SOT223 |
5.130 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 5.5A (Tc) | 5V | 150mOhm @ 5A, 5V | 2V @ 1mA | - | ±10V | 330pF @ 25V | - | 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-73 | TO-261-4, TO-261AA |
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Nexperia |
MOSFET N-CH 55V 7.5A SOT223 |
4.896 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 7.5A (Tc) | 5V | 80mOhm @ 5A, 5V | 2V @ 1mA | - | ±10V | 650pF @ 25V | - | 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-73 | TO-261-4, TO-261AA |
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EPC |
GAN TRANS 300V 150MO BUMPED DIE |
7.128 |
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eGaN® | N-Channel | GaNFET (Gallium Nitride) | 300V | 4A (Ta) | 5V | 150mOhm @ 3A, 5V | 2.5V @ 1mA | - | +6V, -4V | 194pF @ 240V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Nexperia |
MOSFET N-CH 12V 4WLCSP |
6.246 |
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- | N-Channel | MOSFET (Metal Oxide) | 12V | 6.4A (Ta) | 4.5V | 25mOhm @ 3A, 4.5V | 900mV @ 250µA | 15.4nC @ 4.5V | ±8V | 1060pF @ 6V | - | 556mW (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WLCSP (1.48x.98) | 6-XFBGA, WLCSP |
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ON Semiconductor |
MOSFET N-CH 60V 71A SO8FL |
8.244 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Ta), 71A (Tc) | 4.5V, 10V | 6.1mOhm @ 35A, 10V | 2V @ 250µA | 20nC @ 10V | ±20V | 1400pF @ 25V | - | 3.6W (Ta), 61W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 71A SO8FL |
3.474 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Ta), 71A (Tc) | 4.5V, 10V | 6.1mOhm @ 35A, 10V | 2V @ 250µA | 20nC @ 10V | ±20V | 1400pF @ 25V | - | 3.6W (Ta), 61W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 500V 5.5A TO-220FI |
4.176 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.56Ohm @ 2.8A, 10V | - | 14.6nC @ 10V | ±30V | 360pF @ 30V | - | 2W (Ta), 30W (Tc) | 150°C (TJ) | Through Hole | TO-220F-3FS | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 30V 100MA CP |
2.610 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 1.5V, 4V | 10.4Ohm @ 50mA, 4V | - | 1.43nC @ 10V | ±10V | 7.5pF @ 10V | - | 250mW (Ta) | 150°C (TJ) | Surface Mount | 3-CP | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 30V 7.5A ECH8 |
8.856 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 7.5A (Ta) | 4V, 10V | 25mOhm @ 3.5A, 10V | 2.6V @ 1mA | 18nC @ 10V | ±20V | 875pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | SOT-28FL/ECH8 | 8-SMD, Flat Lead |
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ON Semiconductor |
MOSFET N-CH 30V 1.8A MCPH3 |
4.536 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 1.8A (Ta) | 4V, 10V | 180mOhm @ 900mA, 10V | 2.6V @ 1mA | 2nC @ 10V | ±20V | 88pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 20V 2A MCPH3 |
3.042 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.8V, 4.5V | 125mOhm @ 1A, 4.5V | 1.3V @ 1mA | 1.8nC @ 4.5V | ±12V | 128pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 20V 4.5A MCPH3 |
4.392 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 1.8V, 4.5V | 38mOhm @ 2A, 4.5V | 1.3V @ 1mA | 5.1nC @ 4.5V | ±12V | 410pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
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ON Semiconductor |
MOSFET P-CH 12V 3.5A MCPH6 |
7.056 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 3.5A (Ta) | 1.8V, 4.5V | 70mOhm @ 1.5A, 4.5V | 1.4V @ 1mA | 5.6nC @ 4.5V | ±10V | 405pF @ 6V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | SC-88FL/MCPH6 | 6-SMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 20V 8A MCPH6 |
4.194 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 8A (Ta) | 1.2V, 4.5V | 22mOhm @ 4A, 4.5V | 1V @ 1mA | 11.2nC @ 4.5V | ±9V | 705pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | SC-88FL/MCPH6 | 6-SMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 100V 100A DPAK |
3.618 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Ta) | 10V, 15V | 6.9mOhm @ 50A, 15V | 4V @ 1mA | 35nC @ 10V | ±20V | 2950pF @ 50V | - | 110W (Tc) | 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 60V 170A DPAK |
3.060 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 170A (Ta) | 10V | 3.3mOhm @ 50A, 10V | 2.6V @ 1mA | 280nC @ 10V | ±20V | 15800pF @ 20V | - | 90W (Tc) | 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V 180A DPAK |
89 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Ta) | 10V, 15V | 2.8mOhm @ 50A, 15V | 4V @ 1mA | 95nC @ 10V | ±20V | 6950pF @ 50V | - | 200W (Tc) | 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 800V 2.9A IPAK |
8.334 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 2.9A (Tc) | 10V | 4.5Ohm @ 1.2A, 10V | 4.5V @ 50µA | 17nC @ 10V | ±30V | 440pF @ 25V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 600V 6.8A IPAK-4 |
3.780 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.6A (Tc) | 10V | 745mOhm @ 3.25A, 10V | 4V @ 250µA | 15nC @ 10V | ±25V | 440pF @ 50V | - | 84W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 600V 6.8A IPAK-3 |
6.732 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.6A (Tc) | 10V | 745mOhm @ 3.25A, 10V | 4V @ 250µA | 15nC @ 10V | ±25V | 440pF @ 50V | - | 84W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 600V 6.8A DPAK-3 |
2.772 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.6A (Tc) | 10V | 745mOhm @ 3.25A, 10V | 4V @ 250µA | 15nC @ 10V | ±25V | 440pF @ 50V | - | 84W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 600V 5.9A IPAK-4 |
8.892 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 5.7A (Tc) | 10V | 900mOhm @ 2.5A, 10V | 4V @ 250µA | 12nC @ 10V | ±25V | 360pF @ 50V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 600V 5.9A IPAK-3 |
3.582 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 5.7A (Tc) | 10V | 900mOhm @ 2.5A, 10V | 4V @ 250µA | 12nC @ 10V | ±25V | 360pF @ 50V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 600V 5.9A DPAK-3 |
8.478 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 5.7A (Tc) | 10V | 900mOhm @ 2.5A, 10V | 4V @ 250µA | 12nC @ 10V | ±25V | 360pF @ 50V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 600V 4.8A TO-220FP |
3.762 |
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