Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 938/999
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Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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ON Semiconductor |
MOSFET N-CH 600V 7.1A TO-220FP |
8.892 |
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* | - | - | - | - | 10V | - | - | - | ±30V | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 600V 10A TO-220FP |
4.572 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 100V 100A TO220 |
7.596 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Ta) | 10V, 15V | 7.2mOhm @ 50A, 15V | 4V @ 1mA | 35nC @ 10V | ±20V | 2950pF @ 50V | - | 2.1W (Ta), 110W (Tc) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 40V 49A SO8FL |
4.914 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 53A (Ta), 378A (Tc) | 10V | 0.7mOhm @ 50A, 10V | 4V @ 250µA | 128nC @ 10V | ±20V | 8400pF @ 25V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 40V 49A SO8FL |
3.276 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 53A (Ta), 378A (Tc) | 10V | 0.7mOhm @ 50A, 10V | 4V @ 250µA | 128nC @ 10V | ±20V | 8400pF @ 25V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 40V 49A SO8FL |
4.716 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 53A (Ta), 378A (Tc) | 10V | 0.7mOhm @ 50A, 10V | 4V @ 250µA | 128nC @ 10V | ±20V | 8400pF @ 25V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 40V 126A SO8FL |
5.400 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 31A (Ta), 150A (Tc) | 4.5V, 10V | 2mOhm @ 50A, 10V | 2V @ 250µA | 50nC @ 10V | ±20V | 3100pF @ 20V | - | 3.7W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 40V 126A SO8FL |
4.590 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 31A (Ta), 150A (Tc) | 4.5V, 10V | 2mOhm @ 50A, 10V | 2V @ 250µA | 50nC @ 10V | ±20V | 3100pF @ 20V | - | 3.7W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 40V 126A SO8FL |
2.538 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 31A (Ta), 150A (Tc) | 4.5V, 10V | 2mOhm @ 50A, 10V | 2V @ 250µA | 50nC @ 10V | ±20V | 3100pF @ 20V | - | 3.7W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 71A SO8FL |
2.988 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Ta), 71A (Tc) | 4.5V, 10V | 6.1mOhm @ 35A, 10V | 2V @ 250µA | 20nC @ 10V | ±20V | 1400pF @ 25V | - | 3.6W (Ta), 61W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 71A SO8FL |
6.678 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Ta), 71A (Tc) | 4.5V, 10V | 6.1mOhm @ 35A, 10V | 2V @ 250µA | 20nC @ 10V | ±20V | 1400pF @ 25V | - | 3.6W (Ta), 61W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 35V 11A TP-FA |
6.984 |
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- | N-Channel | MOSFET (Metal Oxide) | 35V | 11A (Ta) | 4V, 10V | 25mOhm @ 5.5A, 10V | 2.6V @ 1mA | 17.3nC @ 10V | ±20V | 960pF @ 20V | - | 1W (Ta), 15W (Tc) | 150°C (TJ) | Surface Mount | DPAK/TP-FA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 35V 11A TP |
6.714 |
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- | N-Channel | MOSFET (Metal Oxide) | 35V | 11A (Ta) | 4V, 10V | 25mOhm @ 5.5A, 10V | 2.6V @ 1mA | 17.3nC @ 10V | ±20V | 960pF @ 20V | - | 1W (Ta), 15W (Tc) | 150°C (TJ) | Through Hole | IPAK/TP | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V 12A TO220FP-3 |
3.510 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 330mOhm @ 4.5A, 10V | 4.5V @ 370µA | 22nC @ 10V | ±20V | 1010pF @ 100V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V TO220-3 |
5.238 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 16.8A (Tc) | 10V | 230mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31nC @ 10V | ±20V | 1450pF @ 100V | - | 126W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 12A TO220-3 |
7.254 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 330mOhm @ 4.5A, 10V | 4.5V @ 370µA | 22nC @ 10V | ±20V | 1010pF @ 100V | - | 93W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO220-3 |
3.490 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 4.5V @ 320µA | 19nC @ 10V | ±20V | 877pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO247-3 |
8.838 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 16.8A (Tc) | 10V | 230mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31nC @ 10V | ±20V | 1450pF @ 100V | - | 126W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 12A TO247-3 |
4.878 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 330mOhm @ 4.5A, 10V | 4.5V @ 370µA | 22nC @ 10V | ±20V | 1010pF @ 100V | - | 93W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 4VSON |
4.770 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 15.9A (Tc) | 10V | 255mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31nC @ 10V | ±20V | 1450pF @ 100V | - | 126W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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GeneSiC Semiconductor |
TRANS SJT 1200V 160A SOT227 |
8.334 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 160A (Tc) | - | 10mOhm @ 100A | - | - | - | 14400pF @ 800V | - | 535W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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GeneSiC Semiconductor |
TRANS SJT 1200V 45A TO247 |
7.074 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 45A (Tc) | - | 50mOhm @ 20A | - | - | - | 3091pF @ 800V | - | 282W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
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GeneSiC Semiconductor |
TRANSISTOR 1200V 100A TO263-7 |
3.562 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 60V 25A TO252-3 |
6.066 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 25A (Tc) | 4.5V, 10V | 30mOhm @ 25A, 10V | 2.2V @ 8µA | 16.3nC @ 10V | ±16V | 1220pF @ 25V | - | 29W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 50A TO220-3 |
5.526 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 50A (Tc) | 8V, 10V | 20mOhm @ 50A, 10V | 4V @ 90µA | 31nC @ 10V | ±20V | 1820pF @ 75V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 8TISON |
8.172 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 600V 3TO252 |
8.298 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 4.5V @ 320µA | 19nC @ 10V | ±20V | 877pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 500V 4.3A PG-T0252 |
3.492 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 4.3A (Tc) | 13V | 950mOhm @ 1.2A, 13V | 3.5V @ 100µA | 10.5nC @ 10V | ±20V | 231pF @ 100V | - | 53W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N CH 500V 5A TO252 |
2.790 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 13V | 800mOhm @ 1.5A, 13V | 3.5V @ 130µA | 12.4nC @ 10V | ±20V | 280pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N CH 500V 6.1A PG-TO252 |
8.298 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 6.1A (Tc) | 13V | 650mOhm @ 1.8A, 13V | 3.5V @ 150µA | 15nC @ 10V | ±20V | 342pF @ 100V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |