Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 73/999
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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ON Semiconductor |
MOSFET N-CH 30V 8-MLP |
27.498 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 13.3A (Ta), 16A (Tc) | 4.5V, 10V | 8.5mOhm @ 13.3A, 10V | 3V @ 250µA | 29nC @ 10V | ±20V | 1680pF @ 15V | - | 2.3W (Ta), 29W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET N-CH 190V 1.5A SC75-6 |
311.352 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 190V | 1.5A (Tc) | 1.8V, 4.5V | 2.4Ohm @ 500mA, 4.5V | 1.5V @ 250µA | 6.5nC @ 10V | ±16V | 135pF @ 50V | - | 2.4W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-75-6L Single | PowerPAK® SC-75-6L |
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Vishay Siliconix |
MOSFET N-CH 200V 0.96A SOT223 |
39.318 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 960mA (Tc) | 10V | 1.5Ohm @ 580mA, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET P-CH 20V 30A 1212-8 |
27.648 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 30A (Tc) | 1.8V, 4.5V | 5.4mOhm @ 13A, 4.5V | 900mV @ 250µA | 180nC @ 8V | ±8V | 5700pF @ 10V | - | 3.7W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 60V 2.7A SOT223 |
21.090 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 2.7A (Tc) | 4V, 5V | 200mOhm @ 1.6A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET P-CH 20V 13.4A 8SOIC |
21.216 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 13.4A (Tc) | 1.8V, 4.5V | 15.5mOhm @ 9A, 4.5V | 1V @ 250µA | 90nC @ 8V | ±8V | 2380pF @ 10V | - | 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 8.4A 8-SOIC |
24.456 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.4A (Ta) | 4.5V, 10V | 22mOhm @ 8.4A, 10V | 3V @ 250µA | 7.6nC @ 5V | ±20V | 560pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 45V 2A TSMT3 |
53.568 |
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- | N-Channel | MOSFET (Metal Oxide) | 45V | 2A (Ta) | 2.5V, 4.5V | 180mOhm @ 2A, 4.5V | 1.5V @ 1mA | 4.1nC @ 4.5V | ±12V | 200pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Texas Instruments |
MOSFET N-CH 30V 60A 8VSON |
44.898 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Ta) | 4.5V, 10V | 4.2mOhm @ 18A, 10V | 1.8V @ 250µA | 35nC @ 10V | ±20V | 2310pF @ 15V | - | 3W (Ta), 53W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 60V 3.8A SOT223 |
206.904 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 3.8A (Ta) | 4.5V, 10V | 80mOhm @ 4.8A, 10V | 1V @ 250µA | 5.8nC @ 10V | ±20V | 459pF @ 40V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 100V 1.7A SOT223 |
58.824 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 1.7A (Ta) | 6V, 10V | 350mOhm @ 2.6A, 10V | 4V @ 250µA | 5.4nC @ 10V | ±20V | 274pF @ 50V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET P-CH 40V 9.1A 8-SO |
19.872 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 9.1A (Ta) | 4.5V, 10V | 11mOhm @ 9.8A, 10V | 2.5V @ 250µA | 47.5nC @ 5V | ±25V | 4234pF @ 20V | - | 1.45W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CHANNEL 40V 51A 8WDFN |
43.932 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 51A (Tc) | 4.5V, 10V | 7.3mOhm @ 10A, 10V | 2.2V @ 250µA | 7nC @ 4.5V | ±20V | 880pF @ 25V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 30V 13.5A 8SOIC |
39.024 |
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PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 13.5A (Ta) | 4.5V, 10V | 9mOhm @ 13.5A, 10V | 3V @ 1mA | 38nC @ 10V | ±20V | 1540pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 100V 4.2A TO252-3 |
19.860 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 4.2A (Tc) | 4.5V, 10V | 850mOhm @ 3A, 10V | 2V @ 380µA | 16nC @ 10V | ±20V | 372pF @ 25V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 100V 2A SOT223 |
185.766 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 2A (Ta) | 6V, 10V | 250mOhm @ 3.2A, 10V | 2V @ 250µA | 7.7nC @ 10V | ±20V | 405pF @ 50V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 800V 1A DPAK |
96.606 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 800V | 1A (Tc) | 10V | 20Ohm @ 500mA, 10V | 5V @ 250µA | 7.2nC @ 10V | ±30V | 195pF @ 25V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 20V 18A TO252 |
51.600 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 18A (Ta), 45A (Tc) | 2.5V, 4.5V | 4.4mOhm @ 20A, 4.5V | 1.6V @ 250µA | 43nC @ 10V | ±12V | 4630pF @ 10V | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 50A TO252-3-313 |
22.830 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 7.3mOhm @ 50A, 10V | 2.2V @ 17µA | 30nC @ 10V | +20V, -16V | 2340pF @ 25V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 7A MICRO8 |
65.382 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 26mOhm @ 7A, 10V | 2.5V @ 250µA | 69nC @ 10V | ±20V | 2204pF @ 25V | - | 1.79W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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IXYS Integrated Circuits Division |
MOSFET N-CH 600V SOT-223 |
22.044 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | - | 0V | 44Ohm @ 100mA, 0V | - | - | ±15V | 100pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 125°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 30V 8A 6-TSOP |
582.120 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8A (Tc) | 4.5V, 10V | 19.5mOhm @ 5A, 10V | 3V @ 250µA | 33nC @ 10V | ±20V | 1295pF @ 15V | - | 2W (Ta), 4.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET P-CH 60V 6.6A 8-SO |
213.240 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 6.6A (Ta) | 4.5V, 10V | 25mOhm @ 5A, 10V | 3V @ 250µA | 53.1nC @ 10V | ±20V | 2569pF @ 30V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 40V 21A PPAK SO-8 |
28.638 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 21A (Tc) | 4.5V, 10V | 19mOhm @ 10A, 10V | 2.5V @ 250µA | 18nC @ 10V | ±20V | 600pF @ 20V | - | 3.9W (Ta), 15.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Diodes Incorporated |
MOSFET N-CH 60V 2.4A SOT-89 |
270.330 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 2.7A (Ta) | 4.5V, 10V | 120mOhm @ 2.5A, 10V | 1V @ 250µA | 5.7nC @ 10V | ±20V | 330pF @ 40V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-89-3 | TO-243AA |
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ON Semiconductor |
MOSFET P-CH 60V 5.7A 8-WDFN |
43.338 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 5.7A (Ta) | 4.5V, 10V | 52mOhm @ 6A, 10V | 3V @ 250µA | 25nC @ 10V | ±20V | 1258pF @ 30V | - | 3.2W (Ta), 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Infineon Technologies |
MOSFET P-CH 20V 5.3A 8-SOIC |
29.334 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 5.3A (Ta) | 4.5V, 10V | 60mOhm @ 5.3A, 10V | 2.5V @ 250µA | 25nC @ 10V | ±12V | 860pF @ 10V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 200V 4.5A DPAK |
77.004 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 4.5A (Tc) | 10V | 800mOhm @ 2.3A, 10V | 5V @ 250µA | 6.1nC @ 10V | ±30V | 230pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 60V 8A U8FL |
99.180 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 2.4A (Ta) | 4.5V, 10V | 260mOhm @ 3A, 10V | 2.5V @ 250µA | 6nC @ 10V | ±20V | 250pF @ 25V | - | 3W (Ta), 18W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 44A DFN |
27.510 |
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SRFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 44A (Ta), 85A (Tc) | 4.5V, 10V | 2mOhm @ 20A, 10V | 1.9V @ 250µA | 49nC @ 10V | ±12V | 3110pF @ 15V | - | 6.2W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |