Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 72/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Nexperia |
MOSFET N-CH LFPAK |
378.738 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 10V | 72.4mOhm @ 5A, 10V | 4V @ 1mA | 14nC @ 10V | ±20V | 645pF @ 50V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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ON Semiconductor |
MOSFET P-CH 20V 7.3A MLP2X2 |
158.178 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 7.3A (Ta) | 2.5V, 4.5V | 30mOhm @ 7.3A, 4.5V | 1.5V @ 250µA | 20nC @ 4.5V | ±12V | 1645pF @ 10V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 60V 30A TO252-3 |
61.620 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4.5V, 10V | 22mOhm @ 30A, 10V | 2.2V @ 11µA | 10nC @ 4.5V | ±20V | 1600pF @ 30V | - | 36W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 20V 6A SOT23 |
783.138 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 6A (Tc) | 1.5V, 4.5V | 30mOhm @ 5A, 4.5V | 1V @ 250µA | 8.5nC @ 4.5V | ±8V | 485pF @ 10V | - | 2W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-236 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 100V 3A SOT223 |
106.290 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 3A (Ta) | 10V | 90mOhm @ 3A, 10V | 4V @ 1mA | 21nC @ 10V | ±20V | 633pF @ 25V | - | 1.8W (Ta), 8.3W (Tc) | -65°C ~ 150°C (TJ) | Surface Mount | SC-73 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 150V 2.8A SOT-223 |
31.374 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 2.8A (Tc) | 6V, 10V | 128mOhm @ 2.8A, 10V | 4V @ 250µA | 7nC @ 10V | ±20V | 395pF @ 75V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 30V 12.5A 8-SOIC |
21.696 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 12.5A (Ta) | 4.5V, 10V | 9.5mOhm @ 12.5A, 10V | 3V @ 250µA | 23nC @ 5V | ±20V | 1620pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET P-CH 30V 12A 8-SOIC |
54.318 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 14mOhm @ 8A, 10V | 2V @ 250µA | 30.7nC @ 10V | ±25V | 1802pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 60V 0.6A TO92-3 |
31.092 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 600mA (Ta) | 5V, 10V | 1Ohm @ 1.5A, 10V | 3V @ 1mA | - | ±20V | 100pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Diodes Incorporated |
MOSFET N-CH 200V 1.5A DPAK |
24.666 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 1.5A (Ta) | 5V, 10V | 750mOhm @ 2.75A, 10V | 2.5V @ 250µA | 8.1nC @ 5V | ±20V | 358pF @ 25V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 600V 0.4A TO-92 |
22.704 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 400mA (Tc) | 10V | 8Ohm @ 700mA, 10V | 4.5V @ 50µA | 10nC @ 10V | ±30V | 170pF @ 25V | - | 3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Nexperia |
MOSFET N-CH 40V 56A LFPAK |
114.864 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 56A (Tc) | 5V | 11mOhm @ 20A, 10V | 2V @ 1mA | 21nC @ 5V | ±15V | 1800pF @ 25V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Diodes Incorporated |
MOSFET N-CH 75V 7.8A PWDI3333-8 |
33.726 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 7.8A (Ta) | 4.5V, 10V | 22mOhm @ 7.2A, 10V | 3V @ 250µA | 56.5nC @ 10V | ±20V | 2737pF @ 35V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 11A 8-SOIC |
91.980 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 13.8mOhm @ 11A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | ±20V | 770pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET P-CH 250V 0.265A SOT223 |
73.458 |
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- | P-Channel | MOSFET (Metal Oxide) | 250V | 265mA (Ta) | 3.5V, 10V | 14Ohm @ 200mA, 10V | 2V @ 1mA | 3.45nC @ 10V | ±40V | 73pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET P-CH 20V 3A MICROFET6 |
53.868 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 1.8V, 4.5V | 120mOhm @ 3A, 4.5V | 1.3V @ 250µA | 6nC @ 4.5V | ±8V | 435pF @ 10V | Schottky Diode (Isolated) | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 40V 6.7A DPAK |
46.806 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 40V | 6.7A (Ta), 14A (Tc) | 4.5V, 10V | 44mOhm @ 6.7A, 10V | 3V @ 250µA | 29nC @ 10V | ±20V | 1550pF @ 20V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V 11A TO-252AA |
20.142 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Tc) | 5V | 107mOhm @ 8A, 5V | 3V @ 250µA | 11.3nC @ 10V | ±16V | 350pF @ 25V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 25V 35A DPAK |
52.974 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 25V | 35A (Tc) | 4.5V, 10V | 14mOhm @ 35A, 10V | 2.5V @ 250µA | 18nC @ 10V | ±20V | 845pF @ 13V | - | 39W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 100V 320MA TO92-3 |
35.586 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 320mA (Ta) | 5V, 10V | 3Ohm @ 500mA, 10V | 1.5V @ 1mA | - | ±20V | 75pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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ON Semiconductor |
MOSFET P-CH 200V 3.7A DPAK |
159.744 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 200V | 3.7A (Tc) | 10V | 1.4Ohm @ 1.85A, 10V | 5V @ 250µA | 13nC @ 10V | ±30V | 430pF @ 25V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 4.6A 8-SOIC |
35.550 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 4.6A (Ta) | 4.5V, 10V | 70mOhm @ 4.6A, 10V | 3V @ 250µA | 40nC @ 10V | ±20V | 870pF @ 10V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 60V 3.1A SOT223 |
73.182 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 3.1A (Ta) | 4.5V, 10V | 120mOhm @ 2.5A, 10V | 3V @ 250µA | 5.7nC @ 10V | ±20V | 330pF @ 40V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 30V 40A TSDSON-8 |
212.628 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 13.5A (Ta), 40A (Tc) | 6V, 10V | 8.6mOhm @ 20A, 10V | 3.1V @ 105µA | 57.5nC @ 10V | ±25V | 4785pF @ 15V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 73A 8SON |
248.046 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 73A (Tc) | 3V, 8V | 10.5mOhm @ 11A, 8V | 1.8V @ 250µA | 5.2nC @ 4.5V | +10V, -8V | 700pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 100V 23A POWERPAKSO |
93.996 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 4.5V, 10V | 38mOhm @ 10A, 10V | 2.5V @ 250µA | 20nC @ 10V | ±20V | 700pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CHANNEL 30V 25.3A 8SO |
64.230 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 25.3A (Tc) | 4.5V, 10V | 6.2mOhm @ 12A, 10V | 2.5V @ 250µA | 167nC @ 10V | ±25V | 6630pF @ 15V | - | 6W (Tc) | -55°C ~ 150°C (TA) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 40V 22A 8SOP |
49.836 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 22A (Tc) | 4.5V, 10V | 15mOhm @ 9A, 10V | 2.5V @ 250µA | 48nC @ 10V | ±20V | 2783pF @ 20V | - | 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Microchip Technology |
MOSFET N-CH 500V 0.013A SOT23-3 |
46.038 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 13mA (Tj) | 0V | 1000Ohm @ 500µA, 0V | - | - | ±20V | 10pF @ 25V | Depletion Mode | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 (TO-236AB) | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 22A TO252 |
55.602 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 70A (Tc) | 4.5V, 10V | 3mOhm @ 20A, 10V | 2.2V @ 250µA | 49nC @ 10V | ±20V | 2010pF @ 15V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |