Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 71/999
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Beschreibung |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Nexperia |
MOSFET P-CH 30V 3A SOT223 |
340.698 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 3A (Tc) | 10V | 250mOhm @ 1A, 10V | 2.8V @ 1mA | 25nC @ 10V | ±20V | 250pF @ 20V | - | 1.65W (Ta) | 150°C (TJ) | Surface Mount | SC-73 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CHANNEL 500V 9A SOT223 |
25.278 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 9A (Tc) | 13V | 650mOhm @ 1.8A, 13V | 3.5V @ 150µA | 15nC @ 10V | ±20V | 342pF @ 100V | - | 5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | SOT-223-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 14A POWERPAKSO |
25.092 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 14A (Tc) | 4.5V, 10V | 92mOhm @ 4A, 10V | 2.5V @ 250µA | 8nC @ 10V | ±20V | 280pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Nexperia |
MOSFET N-CH 80V LFPAK56 |
16.674 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 37A (Tc) | 5V, 10V | 25mOhm @ 10A, 10V | 2.1V @ 1mA | 17.1nC @ 5V | ±20V | 2703pF @ 25V | - | 95W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 55V 5A SOT223 |
199.800 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 5A (Tc) | 4.5V, 10V | 60mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | ±16V | 380pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET P-CH 30V 3.2A SOT-23-6 |
145.680 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 3.2A (Ta) | 4.5V, 10V | 70mOhm @ 3.2A, 10V | 1V @ 250µA | 15.8nC @ 10V | ±20V | 630pF @ 15V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Diodes Incorporated |
MOSFET P-CH 100V 2.3A SOT223 |
47.364 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 2.3A (Ta), 6A (Tc) | 4.5V, 10V | 250mOhm @ 5A, 10V | 3V @ 250µA | 17.5nC @ 10V | ±20V | 1239pF @ 25V | - | 2W (Ta), 13.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Nexperia |
MOSFET P-CH 12V 8.2A 6DFN |
28.266 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 8.2A (Ta) | 1.8V, 4.5V | 19mOhm @ 8.2A, 4.5V | 900mV @ 250µA | 100nC @ 4.5V | ±12V | 2875pF @ 6V | - | 1.7W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
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Vishay Siliconix |
MOSFET P-CH 20V 29.7A SC70-6 |
261.750 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 29.7A (Tc) | 1.5V, 4.5V | 14.5mOhm @ 8A, 4.5V | 900mV @ 250µA | 90nC @ 8V | ±8V | 2340pF @ 10V | - | 3.5W (Ta), 19W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Nexperia |
MOSFET N-CH LFPAK |
308.844 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 28.1A (Tc) | 10V | 39.5mOhm @ 15A, 10V | 4V @ 1mA | 23nC @ 10V | ±20V | 1847pF @ 50V | - | 74W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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ON Semiconductor |
MOSFET N-CH 400V 2A SOT-223 |
136.356 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 400V | 2A (Tc) | 10V | 3.4Ohm @ 1A, 10V | 5V @ 250µA | 6nC @ 10V | ±30V | 225pF @ 25V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 30V 14A POWER56 |
59.928 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 28A (Tc) | 4.5V, 10V | 7.5mOhm @ 13A, 10V | 3V @ 250µA | 22nC @ 10V | ±20V | 1350pF @ 15V | - | 2.5W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 70A TO252 |
346.584 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 70A (Tc) | 4.5V, 10V | 12mOhm @ 10A, 10V | 2.5V @ 250µA | 37nC @ 10V | ±20V | 2118pF @ 30V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 40V 4.4A 8SO |
137.994 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 4.4A (Ta) | 4.5V, 10V | 50mOhm @ 6A, 10V | 3V @ 250µA | 13.9nC @ 10V | ±20V | 674pF @ 20V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET P-CH 20V 10A 8-SOIC |
88.320 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 10A (Ta) | 2.5V, 10V | 13mOhm @ 10A, 10V | 1.1V @ 250µA | 56.9nC @ 10V | ±12V | 2444pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 12V 8A 6-TSOP |
27.756 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 8A (Tc) | 1.8V, 4.5V | 22mOhm @ 8.1A, 4.5V | 1V @ 250µA | 65nC @ 8V | ±8V | 2010pF @ 6V | - | 4.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Micro Commercial Co |
N-CHANNEL,MOSFETS,DPAK PACKAGE |
19.692 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 12mOhm @ 30A, 10V | 1.5V @ 250µA | 45nC @ 10V | ±20V | 4200pF @ 25V | - | 85W | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 60V 8A U8FL |
24.306 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 2.4A (Ta) | 4.5V, 10V | 260mOhm @ 3A, 10V | 2.5V @ 250µA | 6nC @ 10V | ±20V | 250pF @ 25V | - | 3W (Ta), 18W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Texas Instruments |
12V N-CHANNEL NEXFET POWER MOSFE |
103.896 |
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FemtoFET™ | N-Channel | MOSFET (Metal Oxide) | 12V | 4.3A (Ta) | 1.8V, 4.5V | 19mOhm @ 900mA, 4.5V | 1.2V @ 250µA | 5nC @ 4.5V | 8V | 674pF @ 6V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 36A 8TSON ADV |
39.870 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 36A (Tc) | 2.5V, 4.5V | 4.7mOhm @ 18A, 4.5V | 1.2V @ 1mA | 65nC @ 5V | ±12V | 4300pF @ 10V | - | 42W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Rohm Semiconductor |
MOSFET N-CH 60V 2A SOT-89 |
160.428 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 2A (Ta) | 2.5V, 4V | 320mOhm @ 1A, 4V | 1.5V @ 1mA | - | ±20V | 160pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | MPT3 | TO-243AA |
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ON Semiconductor |
MOSFET N-CH 30V 38A U8FL |
128.052 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.2A (Ta) | 4.5V, 10V | 9.4mOhm @ 30A, 10V | 2.1V @ 250µA | 7.8nC @ 4.5V | ±20V | 770pF @ 15V | - | 780mW (Ta), 21.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 55V 5.1A SOT223 |
43.170 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 5.1A (Ta) | 10V | 57.5mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 340pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Nexperia |
MOSFET N-CH 100V 23A LFPAK |
74.286 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 4.5V, 10V | 49mOhm @ 10A, 10V | 2V @ 1mA | 18nC @ 5V | ±15V | 2130pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 30V 40A TSDSON-8 |
44.364 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 40A (Tc) | 4.5V, 10V | 8.8mOhm @ 20A, 10V | 2.2V @ 250µA | 21nC @ 10V | ±20V | 1700pF @ 15V | - | 2.1W (Ta), 35W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 30V 9.2A 8-SOIC |
118.110 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 9.2A (Ta) | 4.5V, 10V | 19.4mOhm @ 9.2A, 10V | 2.4V @ 25µA | 38nC @ 10V | ±20V | 1110pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
MOSFET N-CH 40V 52A LFPAK |
366.636 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 52A (Tc) | 10V | 12mOhm @ 15A, 10V | 4V @ 1mA | 15nC @ 10V | ±20V | 1039pF @ 25V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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ON Semiconductor |
MOSFET N-CH 600V 1A DPAK |
18.846 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 600V | 1A (Tc) | 10V | 11.5Ohm @ 500mA, 10V | 4V @ 250µA | 6.2nC @ 10V | ±30V | 170pF @ 25V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 1.5A SOT223 |
51.930 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 1.5A (Tc) | 10V | 540mOhm @ 900mA, 10V | 4V @ 250µA | 8.3nC @ 10V | ±20V | 180pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 60V 2.7A SOT223 |
25.554 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 2.7A (Tc) | 10V | 200mOhm @ 1.6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |