Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 46/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 600V 50A TO247-3 |
7.656 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 40mOhm @ 24.9A, 10V | 4V @ 1.24mA | 107nC @ 10V | ±20V | 4340pF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 700V 43.3A TO247 |
23.184 |
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Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 43.3A (Tc) | 10V | 80mOhm @ 17.6A, 10V | 4.5V @ 1.76mA | 161nC @ 10V | ±20V | 4440pF @ 100V | - | 391W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Rohm Semiconductor |
MOSFET NCH 650V 39A TO247N |
12.216 |
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- | N-Channel | SiCFET (Silicon Carbide) | 650V | 39A (Tc) | 18V | 78mOhm @ 13A, 18V | 5.6V @ 6.67mA | 58nC @ 18V | +22V, -4V | 852pF @ 500V | - | 165W (Tc) | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Transphorm |
GANFET N-CH 900V 15A TO220AB |
18.864 |
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- | N-Channel | GaNFET (Gallium Nitride) | 900V | 15A (Tc) | 10V | 205mOhm @ 10A, 10V | 2.6V @ 500µA | 10nC @ 8V | ±18V | 780pF @ 600V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Microchip Technology |
MOSFET N-CH 90V 350MA 3TO-39 |
11.292 |
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- | N-Channel | MOSFET (Metal Oxide) | 90V | 350mA (Tj) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50pF @ 24V | - | 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
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STMicroelectronics |
MOSFET N-CH 1500V 8A TO-247 |
22.632 |
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PowerMESH™ | N-Channel | MOSFET (Metal Oxide) | 1500V | 8A (Tc) | 10V | 2.5Ohm @ 4A, 10V | 5V @ 250µA | 89.3nC @ 10V | ±30V | 3255pF @ 25V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N CH 650V 68.5A PG-TO247 |
12.330 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 68.5A (Tc) | 10V | 41mOhm @ 33.1A, 10V | 4.5V @ 3.3mA | 300nC @ 10V | ±20V | 8400pF @ 100V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 100V 320A TO-247 |
8.640 |
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HiPerFET™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 100V | 320A (Tc) | 10V | 3.5mOhm @ 100A, 10V | 4V @ 250µA | 430nC @ 10V | ±20V | 26000pF @ 25V | - | 1000W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 650V 75A TO247 |
7.092 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 75A (Tc) | 10V | 23mOhm @ 37.5A, 10V | 4.5V @ 7.5mA | 222nC @ 10V | ±30V | 7160pF @ 400V | Super Junction | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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Cree/Wolfspeed |
1000V, 65 MOHM, G3 SIC MOSFET |
27.096 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 1000V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | 35nC @ 15V | +19V, -8V | 660pF @ 600V | - | 113.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Cree/Wolfspeed |
MOSFET N-CH 1000V 35A D2PAK-7 |
13.236 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 1000V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | 35nC @ 15V | +15V, -4V | 660pF @ 600V | - | 113.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Cree/Wolfspeed |
MOSFET N-CH 1200V 30A D2PAK-7 |
20.364 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 30A (Tc) | 15V | 90mOhm @ 20A, 15V | 4V @ 5mA | 51nC @ 15V | +19V, -8V | 1350pF @ 1000V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Cree/Wolfspeed |
MOSFET N-CH 1200V 30A TO247-4 |
19.980 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 30A (Tc) | 15V | 90mOhm @ 20A, 15V | 4V @ 5mA | 51nC @ 15V | +19V, -8V | 1350pF @ 1000V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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IXYS |
MOSFET N-CH 300V 160A TO-264 |
14.880 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 300V | 160A (Tc) | 10V | 19mOhm @ 60A, 10V | 5V @ 8mA | 335nC @ 10V | ±20V | 28000pF @ 25V | - | 1390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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STMicroelectronics |
MOSFET N-CH 600V 39A TO-247 |
10.716 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 44A (Tc) | 10V | 70mOhm @ 20A, 10V | 4V @ 250µA | 124nC @ 10V | ±25V | 4285pF @ 50V | - | 330W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 30A TO-247 |
7.380 |
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Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 240mOhm @ 15A, 10V | 4.5V @ 250µA | 335nC @ 10V | ±20V | 10700pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 47A TO-247 |
17.922 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 47A (Tc) | 10V | 70mOhm @ 30A, 10V | 3.9V @ 2.7mA | 320nC @ 10V | ±20V | 6800pF @ 25V | - | 415W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Transphorm |
GANFET N-CH 650V 27A TO220 |
8.916 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 27A (Tc) | 10V | 72mOhm @ 17A, 8V | 2.6V @ 400uA | 14nC @ 8V | ±18V | 1130pF @ 400V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 1200V 16A TO-247 |
12.516 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 16A (Tc) | 10V | 950mOhm @ 8A, 10V | 6.5V @ 1mA | 120nC @ 10V | ±30V | 6900pF @ 25V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 68A TO247 |
10.572 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 68A (Tc) | 10V | 40mOhm @ 34A, 10V | 4V @ 250µA | 118nC @ 10V | ±25V | 5200pF @ 100V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 1200V 22A TO-247 |
40.590 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 22A (Tc) | 18V | 208mOhm @ 7A, 18V | 4V @ 2.5mA | 62nC @ 18V | +22V, -6V | 1200pF @ 800V | - | 165W (Tc) | 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 1KV 12A TO-247AD |
15.168 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 12A (Tc) | 10V | 1.05Ohm @ 6A, 10V | 4.5V @ 4mA | 155nC @ 10V | ±20V | 4000pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 800V 54.9A TO-247 |
8.760 |
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CoolMOS™ C3 | N-Channel | MOSFET (Metal Oxide) | 800V | 54.9A (Tc) | 10V | 85mOhm @ 32.6A, 10V | 3.9V @ 3.3mA | 288nC @ 10V | ±20V | 7520pF @ 100V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 44A TO-264 |
13.080 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 44A (Tc) | 10V | 190mOhm @ 22A, 10V | 5V @ 8mA | 198nC @ 10V | ±30V | 12000pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET P-CH 500V 40A TO-264 |
16.218 |
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PolarP™ | P-Channel | MOSFET (Metal Oxide) | 500V | 40A (Tc) | 10V | 230mOhm @ 20A, 10V | 4V @ 1mA | 205nC @ 10V | ±20V | 11500pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET P-CH 200V 90A TO-264 |
6.840 |
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PolarP™ | P-Channel | MOSFET (Metal Oxide) | 200V | 90A (Tc) | 10V | 44mOhm @ 500mA, 10V | 4V @ 1mA | 205nC @ 10V | ±20V | 12000pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 300V 140A TO-264 |
6.228 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 300V | 140A (Tc) | 10V | 24mOhm @ 70A, 10V | 5V @ 8mA | 185nC @ 10V | ±20V | 14800pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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Transphorm |
GANFET N-CH 650V 34A TO247-3 |
7.524 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 34A (Tc) | 12V | 60mOhm @ 22A, 10V | 4.8V @ 700µA | 24nC @ 10V | ±20V | 1000pF @ 400V | - | 119W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Cree/Wolfspeed |
MOSFET N-CH 1200V 31.6A TO247 |
879 |
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C2M™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 36A (Tc) | 20V | 98mOhm @ 20A, 20V | 4V @ 5mA | 62nC @ 5V | +25V, -10V | 950pF @ 1000V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 300V 70A ISOPLUS247 |
6.024 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 300V | 70A (Tc) | 10V | 26mOhm @ 70A, 10V | 5V @ 8mA | 185nC @ 10V | ±20V | 14800pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |