Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 23/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Texas Instruments |
MOSFET N-CH 25V 100A 8SON |
18.612 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | 2.5V, 8V | 4.7mOhm @ 20A, 8V | 1.1V @ 250µA | 7.1nC @ 4.5V | +10V, -8V | 1350pF @ 12.5V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 25V 18A 8-SOIC |
23.754 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 18A (Tc) | 2.5V, 10V | 8.6mOhm @ 10A, 10V | 1.4V @ 250µA | 56nC @ 10V | ±12V | 1925pF @ 15V | - | 2.5W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Texas Instruments |
MOSFET N-CH 25V 60A 8SON |
88.392 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 60A (Tc) | 3V, 8V | 4mOhm @ 24A, 8V | 1.4V @ 250µA | 8.4nC @ 4.5V | +10V, -8V | 1300pF @ 12.5V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (3.3x3.3) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 100V 50 8SON |
82.956 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 50A (Ta) | 6V, 10V | 15.1mOhm @ 10A, 10V | 3.4V @ 250µA | 22nC @ 10V | ±20V | 1680pF @ 50V | - | 3.2W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 25V 3.3X3.3 8-SON |
575.178 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 21A (Ta), 60A (Tc) | 3V, 8V | 4.5mOhm @ 24A, 8V | 1.4V @ 250µA | 8.4nC @ 4.5V | +10V, -8V | 1300pF @ 12.5V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (3.3x3.3) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 60V SOT223 |
104.262 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 4.8A (Ta) | 4.5V, 10V | 50mOhm @ 3.6A, 10V | 1V @ 250µA | 20.4nC @ 10V | ±20V | 1063pF @ 30V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET P-CH 60V 450MA SOT223 |
50.010 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 450mA (Ta) | 10V | 5Ohm @ 500mA, 10V | 3.5V @ 1mA | - | ±20V | 100pF @ 18V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 60V 50A TDSON-8 |
602.940 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 7.6mOhm @ 50A, 10V | 4V @ 35µA | 50nC @ 10V | ±20V | 4000pF @ 30V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 55V 31A DPAK |
92.976 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 65mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1200pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 35V 13A DPAK |
79.278 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 35V | 13A (Ta), 55A (Tc) | 4.5V, 10V | 11.6mOhm @ 14A, 10V | 3V @ 250µA | 63nC @ 10V | ±25V | 2370pF @ 20V | - | 3.1W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET N-CH 25V 60A 8-SON |
101.322 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 19A (Ta), 60A (Tc) | 4.5V, 10V | 5.3mOhm @ 20A, 10V | 2.2V @ 250µA | 8.1nC @ 4.5V | +16V, -12V | 1100pF @ 12.5V | - | 2.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (3.3x3.3) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 30V 35A 1212-8 PPAK |
33.460 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 7mOhm @ 15A, 10V | 2.5V @ 250µA | 126nC @ 10V | ±20V | 4427pF @ 15V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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STMicroelectronics |
MOSFET N CH 30V 65A DPAK |
250.554 |
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STripFET™ V | N-Channel | MOSFET (Metal Oxide) | 30V | 65A (Tc) | 4.5V, 10V | 6.9mOhm @ 32.5A, 10V | 3V @ 250µA | 8nC @ 4.5V | ±22V | 1290pF @ 25V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET N-CH 30V 60A 8SON |
42.330 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 60A (Tc) | 3V, 8V | 5.4mOhm @ 18A, 8V | 1.7V @ 250µA | 10nC @ 4.5V | +10V, -8V | 1440pF @ 15V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (3.3x3.3) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 40V 8.4A DPAK |
224.868 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 40V | 8.4A (Ta), 32A (Tc) | 4.5V, 10V | 27mOhm @ 8.4A, 10V | 3V @ 250µA | 27nC @ 5V | ±20V | 2380pF @ 20V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 100V 8A DPAK |
61.968 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 8A (Ta), 35A (Tc) | 4.5V, 10V | 22.5mOhm @ 8A, 10V | 3V @ 250µA | 26nC @ 10V | ±20V | 1540pF @ 50V | - | 3.1W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 50V 16A TO-252AA |
53.826 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 16A (Tc) | 4V, 5V | 47mOhm @ 16A, 5V | 2V @ 250mA | 80nC @ 10V | ±10V | - | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET N-CH 25V 60A 8SON |
523.854 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 21A (Ta), 60A (Tc) | 2.5V, 8V | 4.5mOhm @ 20A, 8V | 1.1V @ 250µA | 9.2nC @ 4.5V | +10V, -8V | 1350pF @ 12.5V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (3.3x3.3) | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 80V 82A LFPAK |
101.916 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 82A (Tc) | 10V | 8.5mOhm @ 15A, 10V | 4V @ 1mA | 55nC @ 10V | ±20V | 3640pF @ 40V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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ON Semiconductor |
MOSFET P-CH 40V 10.8A DPAK |
105.918 |
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Automotive, AEC-Q101, PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 40V | 10.8A (Ta), 50A (Tc) | 4.5V, 10V | 12.3mOhm @ 12.7A, 10V | 3V @ 250µA | 50nC @ 10V | ±20V | 2775pF @ 20V | - | 2.4W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microchip Technology |
MOSFET N-CH 500V 30MA SOT89-3 |
31.872 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 30mA (Tj) | 0V | 1000Ohm @ 500µA, 0V | - | - | ±20V | 10pF @ 25V | Depletion Mode | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-89-3 | TO-243AA |
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Texas Instruments |
MOSFET P-CH 20V 104A 8VSON |
121.308 |
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NexFET™ | P-Channel | MOSFET (Metal Oxide) | 20V | 104A (Tc) | 1.8V, 4.5V | 6.5mOhm @ 10A, 4.5V | 1.15V @ 250µA | 14.1nC @ 4.5V | ±12V | 2120pF @ 10V | - | 2.8W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (3.3x3.3) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET P-CH 150V 2.17A 1212-8 |
55.080 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 2.17A (Tc) | 6V, 10V | 1.2Ohm @ 500mA, 10V | 4.5V @ 250µA | 12nC @ 10V | ±20V | 510pF @ 25V | - | 3.2W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 11A 8-SOIC |
19.698 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 7mOhm @ 16A, 10V | 2.5V @ 250µA | 18nC @ 4.5V | ±20V | - | - | 1.47W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 200V 1.7A 8-SOIC |
19.806 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 1.7A (Ta) | 6V, 10V | 240mOhm @ 2.2A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 80V 73A |
63.408 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 73A (Tc) | 6V, 10V | 9.6mOhm @ 46A, 10V | 3.5V @ 46µA | 35nC @ 10V | ±20V | 2410pF @ 40V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 30V 11A DPAK |
25.200 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 40A (Tc) | 4.5V, 10V | 20mOhm @ 11A, 10V | 3V @ 250µA | 24nC @ 5V | ±25V | 1715pF @ 15V | - | 52W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET N-CH 30V 65A 8SON |
300.702 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 65A (Tc) | 4.5V, 10V | 10.8mOhm @ 11A, 10V | 2V @ 250µA | 3.4nC @ 4.5V | ±20V | 506pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 80V 68A TRENCH 8WDFN |
38.940 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 80V | 11A (Ta), 68A (Tc) | 10V | 9.5mOhm @ 10A, 10V | 4V @ 70µA | 19nC @ 10V | ±20V | 1140pF @ 40V | - | 3.2W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 60V 20A TSDSON-8 |
72.816 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Ta), 20A (Tc) | 4.5V, 10V | 6.7mOhm @ 20A, 10V | 2.2V @ 35µA | 67nC @ 10V | ±20V | 5100pF @ 30V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerVDFN |