Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 25/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
61.644 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4V, 10V | 27mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | 1700pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 150V 13A DPAK |
157.440 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 59A |
52.782 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 59A (Tc) | 6V, 10V | 12.2mOhm @ 46A, 10V | 3.5V @ 46µA | 35nC @ 10V | ±20V | 2500pF @ 50V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 500V 2.1A DPAK |
39.174 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 500V | 2.1A (Tc) | 10V | 4.9Ohm @ 1.05A, 10V | 5V @ 250µA | 23nC @ 10V | ±30V | 660pF @ 25V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 40V 10.8A 8-SOIC |
142.398 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 40V | 10.8A (Ta) | 4.5V, 10V | 13mOhm @ 10.5A, 10V | 3V @ 250µA | 49nC @ 10V | ±20V | 2670pF @ 20V | - | 5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 25V 60A POWERPAKSO-8 |
28.200 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 25V | 60A (Tc) | 4.5V, 10V | 0.96mOhm @ 15A, 10V | 2.4V @ 250µA | 48nC @ 4.5V | +20V, -16V | 5150pF @ 10V | - | 54.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 200V 660MA SOT-223 |
28.470 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 660mA (Ta) | 0V, 10V | 1.8Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | ±20V | 430pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 100V 2.9A SOT223 |
55.992 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 2.9A (Ta) | 10V | 125mOhm @ 2.9A, 10V | 4V @ 250µA | 17nC @ 10V | ±20V | 859pF @ 50V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 60V 6.9A SOT223 |
228.018 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 5.4A (Ta) | 10V | 40mOhm @ 8.2A, 10V | 3V @ 250µA | 24.2nC @ 5V | ±20V | 1407pF @ 40V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 30V 15A POWER33 |
70.140 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 20A (Tc) | 2.5V, 4.5V | 6.1mOhm @ 15A, 4.5V | 1.5V @ 250µA | 27.2nC @ 4.5V | ±12V | 3365pF @ 15V | - | 2.3W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 60V 100A LFPAK |
689.226 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 5.2mOhm @ 15A, 10V | 4V @ 1mA | 56nC @ 10V | ±20V | 3501pF @ 30V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 600V 7.3A TO252 |
26.064 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5nC @ 10V | ±20V | 440pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 30V 100A LFPAK |
118.752 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 1.15mOhm @ 25A, 10V | 1.95V @ 1mA | 103.5nC @ 10V | ±20V | 6645pF @ 15V | - | 272W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Vishay Siliconix |
MOSFET P-CH 60V 3.2A PPAK SO-8 |
328.092 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 3.2A (Ta) | 4.5V, 10V | 64mOhm @ 5A, 10V | 3V @ 250µA | 40nC @ 10V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Renesas Electronics America |
MOSFET N-CH 60V 25A LFPAK |
305.700 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 25A (Ta) | 4.5V, 10V | 14mOhm @ 12.5A, 10V | - | 15nC @ 4.5V | ±20V | 2030pF @ 10V | - | 45W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Vishay Siliconix |
MOSFET N-CH 100V 6.8A 8-SOIC |
65.082 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 6V, 10V | 63mOhm @ 4.4A, 10V | 4.5V @ 250µA | 20nC @ 10V | ±20V | 600pF @ 50V | - | 2.5W (Ta), 6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET P-CH 40V 11A 8SOIC |
57.174 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 40V | 11A (Ta) | 4.5V, 10V | 13mOhm @ 11A, 10V | 3V @ 250µA | 56nC @ 4.5V | ±20V | 4350pF @ 20V | - | 2.4W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 150V 21A 8-TSDSON |
334.638 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 21A (Tc) | 8V, 10V | 52mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | ±20V | 890pF @ 75V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 100V 50A 8VSON |
2.724 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 50A (Ta) | 6V, 10V | 14.5mOhm @ 10A, 10V | 3.6V @ 250µA | 21nC @ 10V | ±20V | 1680pF @ 50V | - | 2.8W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (3.3x3.3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N CH 200V 3.7A 8-SO |
32.328 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 3.7A (Ta) | 10V | 78mOhm @ 2.2A, 10V | 5V @ 100µA | 44nC @ 10V | ±20V | 1750pF @ 100V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 40V 16.4A DPAK |
50.928 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 16.4A (Ta), 101A (Tc) | 5V, 10V | 4.4mOhm @ 50A, 10V | 3.5V @ 250µA | 100nC @ 10V | ±20V | 5025pF @ 25V | - | 2.5W (Ta), 93.75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 40V 9.1A 8-SO |
109.884 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 9.1A (Ta) | 4.5V, 10V | 11mOhm @ 9.8A, 10V | 2.5V @ 250µA | 47.5nC @ 5V | ±25V | 4234pF @ 20V | - | 1.45W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 12A PPAK SO-8 |
48.054 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 7mOhm @ 19A, 10V | 2.5V @ 250µA | 18nC @ 4.5V | ±20V | - | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 60V 50A TDSON-8 |
583.698 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 15A (Ta), 50A (Tc) | 4.5V, 10V | 6.7mOhm @ 50A, 10V | 2.2V @ 35µA | 67nC @ 10V | ±20V | 5100pF @ 30V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 500V 0.4A SOT-223 |
248.094 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 500V | 400mA (Ta) | 10V | 4Ohm @ 400mA, 10V | 4V @ 1mA | - | ±20V | 400pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 40V 10A 8-SOIC |
211.404 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 10A (Ta) | 2.8V, 10V | 13mOhm @ 10A, 10V | 2V @ 250µA | 44nC @ 4.5V | ±12V | 3430pF @ 20V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 200V DPAK-3 |
76.662 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 16A (Tc) | 5V, 10V | 125mOhm @ 8A, 10V | 2.5V @ 250µA | 40nC @ 10V | ±20V | 1575pF @ 25V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 33A TDSON-8 |
297.756 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 33A (Ta), 100A (Tc) | 4.5V, 10V | 1.4mOhm @ 30A, 10V | 2V @ 250µA | 39nC @ 10V | ±20V | 2700pF @ 12V | - | 2.5W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 30V 9.7A 8-SOIC |
21.156 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 9.7A (Ta) | 2.5V, 10V | 10.5mOhm @ 12.6A, 10V | 1.4V @ 250µA | 70nC @ 4.5V | ±12V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 150V 1.2A 6-TSOP |
154.584 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 1.2A (Ta) | 6V, 10V | 375mOhm @ 1.5A, 10V | 4V @ 250µA | 8nC @ 10V | ±20V | - | - | 1.14W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |