Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 27/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET P-CH 30V 29A 8-SOIC |
363.066 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 29A (Tc) | 4.5V, 10V | 5mOhm @ 15A, 10V | 2.5V @ 250µA | 195nC @ 10V | ±20V | 6000pF @ 15V | - | 3.5W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 100V 18A 1212-8 |
328.392 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 18A (Tc) | 10V | 58mOhm @ 5.5A, 10V | 4.4V @ 250µA | 20nC @ 10V | ±20V | 750pF @ 50V | - | 3.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET P-CH 20V 9.8A 8-SOIC |
216.240 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 9.8A (Ta) | 2.5V, 10V | 11mOhm @ 13.7A, 10V | 1.4V @ 250µA | 56nC @ 4.5V | ±12V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 75V 30A TO252-3 |
92.670 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 30A (Tc) | 4.5V, 10V | 20.5mOhm @ 25A, 10V | 2V @ 80µA | 72nC @ 10V | ±20V | 1650pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 30V 30A LFPAK |
44.142 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta) | 4.5V, 10V | 8mOhm @ 15A, 10V | - | 8nC @ 4.5V | +16V, -12V | 1250pF @ 10V | - | - | - | Surface Mount | LFPAK | SC-100, SOT-669 |
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STMicroelectronics |
MOSFET N-CH 20V 2.3A SOT-23 |
25.176 |
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STripFET™ V | N-Channel | MOSFET (Metal Oxide) | 20V | - | 2.5V, 4.5V | 30mOhm @ 2A, 4.5V | 700mV @ 250µA (Min) | 4.6nC @ 4.5V | ±8V | 367pF @ 16V | - | 350mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 60V 50A D-PAK |
84.732 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 9.9A (Ta), 50A (Tc) | 6V, 10V | 13.5mOhm @ 50A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 1350pF @ 25V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 10A 8-PQFN |
86.922 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Ta), 55A (Tc) | 10V | 14.9mOhm @ 33A, 10V | 4V @ 100µA | 59nC @ 10V | ±20V | 2570pF @ 25V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 100V 4.4A 8MLP |
99.300 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 4.4A (Ta) | 6V, 10V | 60mOhm @ 4.4A, 10V | 4V @ 250µA | 17nC @ 10V | ±20V | 1090pF @ 25V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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Nexperia |
MOSFET N-CH 40V 100A LFPAK |
659.514 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 1.8mOhm @ 25A, 10V | 1.95V @ 1mA | 96nC @ 10V | ±20V | 6680pF @ 20V | - | 272W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Diodes Incorporated |
MOSFET N-CH 100V 9.4A |
51.300 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 9.4A (Ta), 98A (Tc) | 4.5V, 10V | 9.5mOhm @ 13A, 10V | 3.5V @ 250µA | 71nC @ 10V | ±20V | 3000pF @ 50V | - | 1.2W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 20V 18A 8-MLP |
385.578 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 12A (Ta), 18A (Tc) | 1.5V, 4.5V | 8mOhm @ 12A, 4.5V | 1V @ 250µA | 116nC @ 4.5V | ±8V | 7860pF @ 10V | - | 2.3W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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Alpha & Omega Semiconductor |
MOSFET P-CH 30V 25A 8DFN |
84.210 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta), 50A (Tc) | 4.5V, 10V | 6.2mOhm @ 20A, 10V | 2.8V @ 250µA | 51nC @ 10V | ±25V | 2940pF @ 15V | - | 6.25W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 100V 8A DPAK |
22.230 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 8A (Ta), 36A (Tc) | 6V, 10V | 24mOhm @ 8A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 1035pF @ 50V | - | 3.1W (Ta), 62W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microchip Technology |
MOSFET N-CH 700V 0.17A 3DPAK |
339.546 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 170mA (Tj) | 0V | 42Ohm @ 100mA, 0V | - | - | ±20V | 540pF @ 25V | Depletion Mode | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microchip Technology |
MOSFET N-CH 400V 0.17A SOT89-3 |
19.734 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 170mA (Tj) | 0V | 25Ohm @ 120mA, 0V | - | - | ±20V | 300pF @ 25V | Depletion Mode | 1.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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Texas Instruments |
MOSFET N-CH 40V 8SON |
215.496 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 19A (Ta), 100A (Tc) | 4.5V, 10V | 4.3mOhm @ 22A, 10V | 2.3V @ 250µA | 32nC @ 10V | ±20V | 2640pF @ 20V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 60V 17A 8SON |
79.520 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Ta), 100A (Tc) | 4.5V, 10V | 5.9mOhm @ 18A, 10V | 2.3V @ 250µA | 36nC @ 10V | ±20V | 2750pF @ 30V | - | 3.2W (Ta), 116W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Infineon Technologies |
N-CHANNEL_30/40V |
40.494 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 7V, 10V | 1.9mOhm @ 50A, 10V | 3.4V @ 50µA | 65nC @ 10V | ±20V | 3770pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 60V 30A TO252-3 |
52.914 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 75mOhm @ 21.5A, 10V | 4V @ 1.7mA | 48nC @ 10V | ±20V | 1535pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 56A DPAK |
354.168 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 56A (Tc) | 10V | 8.4mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | ±20V | 2290pF @ 50V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 600V DPAK |
23.424 |
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Automotive, AEC-Q101, MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 5A (Tc) | 10V | 900mOhm @ 2.5A, 10V | 4V @ 250µA | 14nC @ 10V | ±25V | 363pF @ 50V | - | 45W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 20V 60A PPAK SO-8 |
240.432 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 60A (Tc) | 2.5V, 10V | 1.6mOhm @ 25A, 10V | 1.4V @ 250µA | 625nC @ 10V | ±12V | 22000pF @ 10V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 30V 40A PPAK SO-8 |
97.026 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 5.5mOhm @ 15A, 10V | 2.5V @ 250µA | 146nC @ 10V | ±20V | 4230pF @ 15V | - | 5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 100V POWER56 |
43.842 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 6A (Ta), 26A (Tc) | 6V, 10V | 34mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 645pF @ 50V | - | 2.5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 100V 23A DPAK |
65.064 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 65mOhm @ 12A, 10V | 4V @ 250µA | 40nC @ 10V | ±20V | 870pF @ 25V | - | 70W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
N-CHANNEL 60 V, 0.0031 OHM TYP., |
53.310 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 3.8mOhm @ 40A, 10V | 4V @ 250µA | 55nC @ 10V | ±20V | 3100pF @ 30V | - | 134W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 21A PPAK SO-8 |
90.276 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 21A (Tc) | 4.5V, 10V | 33mOhm @ 10A, 10V | 3V @ 250µA | 19.5nC @ 10V | ±20V | 550pF @ 50V | - | 4.1W (Ta), 29.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 40V 75A PPAK SO-8 |
27.618 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 74A (Tc) | 4.5V, 10V | 3.4mOhm @ 18A, 10V | 2.5V @ 250µA | 100nC @ 10V | ±20V | 4660pF @ 20V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 30V 100A 8TDSON |
41.964 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 37A (Ta), 100A (Tc) | 4.5V, 10V | 1.1mOhm @ 30A, 10V | 2.2V @ 250µA | 72nC @ 10V | ±20V | 4700pF @ 15V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |