Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 30/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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ON Semiconductor |
MOSFET P-CH 20V POWER33 |
103.368 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 18A (Ta), 56A (Tc) | 1.8V, 4.5V | 4mOhm @ 18A, 4.5V | 1V @ 250µA | 122nC @ 4.5V | ±8V | 13200pF @ 10V | - | 2.3W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3), Power33 | 8-PowerWDFN |
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ON Semiconductor |
MOSFET P-CH 30V 20A 8-SO |
375.024 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 4.6mOhm @ 20A, 10V | 3V @ 250µA | 260nC @ 10V | ±25V | 7540pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 40V 18A 1212-8 |
179.112 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 18A (Tc) | 4.5V, 10V | 25mOhm @ 9.3A, 10V | 3V @ 250µA | 62nC @ 10V | ±20V | 1980pF @ 20V | - | 3.7W (Ta), 39W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Nexperia |
MOSFET N-CH 40V 100A LFPAK |
95.892 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 1.4mOhm @ 25A, 10V | 2.2V @ 1mA | 96nC @ 10V | ±20V | 6661pF @ 20V | - | 238W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Vishay Siliconix |
MOSFET N-CH 60V 6.2A PPAK SO-8 |
148.938 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 6.2A (Ta) | 4.5V, 10V | 22mOhm @ 10.3A, 10V | 3V @ 250µA | 27nC @ 10V | ±20V | - | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 40V 58A PPAK SO-8 |
117.570 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 58A (Tc) | 4.5V, 10V | 7.5mOhm @ 16A, 10V | 3V @ 250µA | 77nC @ 10V | ±20V | 3540pF @ 20V | - | 4.6W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 60V 6.2A PPAK SO-8 |
45.738 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 6.2A (Ta) | 4.5V, 10V | 22mOhm @ 10.3A, 10V | 3V @ 250µA | 27nC @ 10V | ±20V | - | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 100V 5A PPAK SO-8 |
26.898 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 5A (Ta) | 6V, 10V | 34mOhm @ 7.8A, 10V | 4V @ 250µA | 30nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 800V 6A TO252 |
20.766 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 950mOhm @ 3A, 10V | 4V @ 250µA | 19.6nC @ 10V | ±30V | 691pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET N-CH 25V 100A 8-SON |
1.480.404 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 31A (Ta), 100A (Tc) | 3V, 8V | 2.4mOhm @ 25A, 8V | 1.4V @ 250µA | 19nC @ 4.5V | +10V, -8V | 3100pF @ 12.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 100V 47A DPAK |
328.752 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 47A (Tc) | 10V | 25mOhm @ 25A, 10V | 4V @ 1mA | 61nC @ 10V | ±20V | 2600pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 100V 25A DPAK |
51.402 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 100V | 25A (Tc) | 10V | 38mOhm @ 12.5A, 10V | 4V @ 250µA | 55nC @ 10V | ±20V | 1550pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET P-CH 30V 21A 8DFN |
295.554 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta), 85A (Tc) | 4.5V, 10V | 3.1mOhm @ 20A, 10V | 2.2V @ 250µA | 196nC @ 10V | ±20V | 9120pF @ 15V | - | 2.3W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Infineon Technologies |
MOSFET N-CH 60V 23A 6-PQFN |
77.508 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 6V, 10V | 3.2mOhm @ 75A, 10V | 3.7V @ 150µA | 165nC @ 10V | ±20V | 6460pF @ 25V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerVDFN |
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Texas Instruments |
MOSFET N-CH 100V 50 8SON |
97.080 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 50A (Ta) | 6V, 10V | 15.1mOhm @ 10A, 10V | 3.4V @ 250µA | 22nC @ 10V | ±20V | 1680pF @ 50V | - | 3.2W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 800V 3A DPAK |
21.600 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 2.5Ohm @ 1.5A, 10V | 5V @ 100µA | 10.5nC @ 10V | ±30V | 175pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 250V 10.9A 8TSDSON |
44.184 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 10.9A (Tc) | 10V | 165mOhm @ 5.5A, 10V | 4V @ 32µA | 11.4nC @ 10V | ±20V | 920pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 100V 5.7A PPAK SO-8 |
632.676 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 5.7A (Ta) | 6V, 10V | 25mOhm @ 9.3A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 20V 10A 8-SOIC |
135.336 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 10A (Ta) | 1.8V, 4.5V | 8.75mOhm @ 14A, 4.5V | 800mV @ 850µA | 125nC @ 4.5V | ±8V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 100V 5.7A PPAK SO-8 |
22.380 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 5.7A (Ta) | 6V, 10V | 25mOhm @ 9.3A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 250V 10.9A 8TDSON |
53.670 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 10.9A (Tc) | 10V | 165mOhm @ 5.5A, 10V | 4V @ 32µA | 11.4nC @ 10V | ±20V | 920pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 60V 8SON |
57.342 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 19A (Ta), 100A (Tc) | 4.5V, 10V | 4.6mOhm @ 22A, 10V | 2.3V @ 250µA | 43nC @ 10V | ±20V | 3840pF @ 30V | - | 3.1W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 40V 8SON |
630.240 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 22A (Ta), 100A (Tc) | 4.5V, 10V | 3.2mOhm @ 25A, 10V | 2.3V @ 250µA | 50nC @ 10V | ±20V | 3840pF @ 20V | - | 3.1W (Ta), 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 42A DPAK |
76.548 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 4.5V, 10V | 14mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | ±16V | 3980pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 200V 3.9A 8-SOIC |
87.714 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 3.9A (Ta) | 6V, 10V | 70mOhm @ 3.9A, 10V | 4V @ 250µA | 46nC @ 10V | ±20V | 2535pF @ 100V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 37A TDSON-8 |
324.768 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 37A (Ta), 100A (Tc) | 4.5V, 10V | 1.1mOhm @ 30A, 10V | 2V @ 250µA | 68nC @ 10V | ±20V | 4300pF @ 15V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 33A D2PAK |
90.492 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 33A (Tc) | 10V | 44mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | ±20V | 1960pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 800V 6A 3TO252 |
196.704 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Ta) | 10V | 900mOhm @ 3.8A, 10V | 3.9V @ 250µA | 41nC @ 10V | ±20V | 785pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 40V 27A 8DFN |
227.370 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 27A (Ta), 85A (Tc) | 4.5V, 10V | 1.6mOhm @ 20A, 10V | 2.4V @ 250µA | 88nC @ 10V | ±20V | 6550pF @ 20V | - | 2.3W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Infineon Technologies |
MOSFET N-CH 600V 10.6A TO252 |
298.596 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 600V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 3.5V @ 320µA | 32nC @ 10V | ±20V | 700pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |