Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 31/999
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Teilenummer |
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Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Diodes Incorporated |
MOSFET P-CH 100V 2.6A SOT223 |
267.072 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 2.6A (Ta) | 6V, 10V | 150mOhm @ 2.8A, 10V | 4V @ 250µA | 26.9nC @ 10V | ±20V | 1055pF @ 50V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET P-CH 12V 8.2A 8-TSSOP |
28.842 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 8.2A (Ta) | 1.8V, 4.5V | 8.5mOhm @ 9.5A, 4.5V | 800mV @ 400µA | 110nC @ 5V | ±8V | - | - | 1.05W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Vishay Siliconix |
MOSFET P-CH 12V 8.2A 8-TSSOP |
25.620 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 8.2A (Ta) | 1.8V, 4.5V | 8.5mOhm @ 9.5A, 4.5V | 800mV @ 400µA | 110nC @ 5V | ±8V | - | - | 1.05W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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ON Semiconductor |
MOSFET P-CH 30V 7.5A SOT-223-4 |
86.502 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 7.5A (Ta) | 4.5V, 10V | 30mOhm @ 7.5A, 10V | 3V @ 250µA | 67nC @ 10V | ±20V | 1440pF @ 15V | - | 3W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 40V 41A 235A 5DFN |
51.510 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 41A (Ta), 235A (Tc) | 10V | 1.3mOhm @ 50A, 10V | 3.5V @ 250µA | 65nC @ 10V | ±20V | 4300pF @ 25V | - | 3.8W (Ta), 128W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 150V 16A POWER56 |
100.980 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 4.6A (Ta), 16A (Tc) | 6V, 10V | 51mOhm @ 4.6A, 10V | 4V @ 250µA | 15nC @ 10V | ±20V | 905pF @ 75V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 650V 10.6A TO252-3 |
25.362 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 10.6A (Tc) | 10V | 380mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | ±20V | 710pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CHAN 200V SO8L |
139.032 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 200V | 12A (Tc) | 6V, 10V | 213mOhm @ 1A, 4V | 3.5V @ 250µA | 160nC @ 10V | ±20V | 4355pF @ 25V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Texas Instruments |
MOSFET N-CH 100V 100A 8SON |
30.148 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 6.4mOhm @ 16A, 10V | 3.3V @ 250µA | 48nC @ 10V | ±20V | 3870pF @ 50V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 60V 11A PPAK SO-8 |
625.728 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Ta) | 4.5V, 10V | 9.6mOhm @ 18A, 10V | 3V @ 250µA | 100nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 60V 11A PPAK SO-8 |
22.914 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Ta) | 4.5V, 10V | 9.6mOhm @ 18A, 10V | 3V @ 250µA | 100nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 60V 10A 8-SOIC |
60.936 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Ta) | 6V, 10V | 14mOhm @ 10A, 10V | 4V @ 250µA | 70nC @ 10V | ±20V | 2900pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 150V 3A PPAK SO-8 |
48.834 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 3A (Ta) | 6V, 10V | 85mOhm @ 3.5A, 10V | 4V @ 250µA | 21nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 25V 41A TDSON-8 |
76.548 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 41A (Ta), 100A (Tc) | 4.5V, 10V | 0.9mOhm @ 30A, 10V | 2.2V @ 250µA | 126nC @ 10V | ±20V | 5800pF @ 12V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 150A 8SOP |
89.892 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 30V | 150A (Tc) | 4.5V, 10V | 0.65mOhm @ 50A, 10V | 2.1V @ 1mA | 110nC @ 10V | ±20V | 10000pF @ 15V | - | 960mW (Ta), 170W (Tc) | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 60V 86A DIRECTFET |
86.340 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 86A (Tc) | 10V | 7mOhm @ 17A, 10V | 4.9V @ 150µA | 50nC @ 10V | ±20V | 2120pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MN | DirectFET™ Isometric MN |
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Infineon Technologies |
MOSFET N-CH 150V 90A DIRECTFET |
33.330 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 4.4A (Ta), 18A (Tc) | 10V | 56mOhm @ 11A, 10V | 5V @ 100µA | 32nC @ 10V | ±20V | 1360pF @ 25V | - | 2.7W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET™ M2 | DirectFET™ Isometric M2 |
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ON Semiconductor |
MOSFET N-CH 40V 22A 8-PQFN |
53.664 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 22A (Ta), 49A (Tc) | 4.5V, 10V | 2.5mOhm @ 22A, 10V | 3V @ 250µA | 61nC @ 10V | ±20V | 3900pF @ 20V | - | 2.3W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 250V 3A 8-SOIC |
65.700 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 3A (Ta) | 6V, 10V | 117mOhm @ 3A, 10V | 4V @ 250µA | 45nC @ 10V | ±20V | 2610pF @ 100V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 80V 30A PPAK SO-8 |
Angebot anfordern |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 30A (Tc) | 8V, 10V | 17mOhm @ 10A, 10V | 4.5V @ 250µA | 45nC @ 10V | ±20V | 1825pF @ 40V | - | 5W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 60V 32A D2PAK |
18.162 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 32A (Tc) | 5V, 10V | 35mOhm @ 16A, 10V | 2.5V @ 250µA | 20nC @ 5V | ±20V | 1040pF @ 25V | - | 3.75W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 18A D2PAK |
37.152 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 150mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1160pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Texas Instruments |
MOSFET P-CH 20V 104A 8VSON |
241.572 |
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NexFET™ | P-Channel | MOSFET (Metal Oxide) | 20V | 104A (Tc) | 1.8V, 4.5V | 6.5mOhm @ 10A, 4.5V | 1.15V @ 250µA | 14.1nC @ 4.5V | ±12V | 2120pF @ 10V | - | 2.8W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (3.3x3.3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 100V 42A DPAK |
313.242 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 10V | 18mOhm @ 33A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 2930pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 100V 23A D2PAK |
16.266 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 117mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 1450pF @ 25V | - | 3.1W (Ta), 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 55V 31A D2PAK |
44.466 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 60mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1200pF @ 25V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 40V 90A TO252-3 |
234.708 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 4.7mOhm @ 90A, 10V | 4V @ 250µA | 154nC @ 10V | ±20V | 10300pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 90A TO252-3 |
86.736 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 4.1mOhm @ 90A, 10V | 2V @ 253µA | 160nC @ 10V | +5V, -16V | 11300pF @ 25V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 90A TO252-3 |
51.816 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 10V | 4.5mOhm @ 90A, 10V | 4V @ 253µA | 130nC @ 10V | ±20V | 10300pF @ 25V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 40V 90A TO252-3 |
46.140 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 4.5V, 10V | 4.3mOhm @ 90A, 10V | 2.2V @ 250µA | 176nC @ 10V | ±16V | 11570pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |