Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 20/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET P-CH 60V 36A POWERPAKSO-8 |
78.516 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 36A (Tc) | 4.5V, 10V | 25mOhm @ 10A, 10V | 2.5V @ 250µA | 100nC @ 10V | ±20V | 3400pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET P-CH 30V 8.8A 8-SOIC |
53.184 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 8.8A (Ta) | 4.5V, 10V | 20mOhm @ 8.8A, 10V | 3V @ 250µA | 24nC @ 5V | ±20V | 1604pF @ 15V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET P-CH 30V 17A TO252 |
128.772 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta) | 4.5V, 10V | 8mOhm @ 10A, 10V | 2.1V @ 250µA | 59.2nC @ 4.5V | ±20V | 6234pF @ 15V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET N-CH 60V 50A 8SON |
105.618 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Ta), 50A (Tc) | 6V, 10V | 13mOhm @ 12A, 10V | 3.5V @ 250µA | 18nC @ 10V | ±20V | 1480pF @ 30V | - | 3.2W (Ta), 75W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 80V 40A 8TSDSON |
50.232 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 40A (Tc) | 6V, 10V | 11mOhm @ 20A, 10V | 3.8V @ 22µA | 18.5nC @ 10V | ±20V | 1300pF @ 40V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 20A TSDSON-8 |
339.678 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Ta), 20A (Tc) | 4.5V, 10V | 10mOhm @ 20A, 10V | 2.2V @ 23µA | 45nC @ 10V | ±20V | 3500pF @ 30V | - | 2.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 60V 50A TDSON-8 |
1.001.766 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 12A (Ta), 50A (Tc) | 4.5V, 10V | 10mOhm @ 50A, 10V | 2.2V @ 23µA | 45nC @ 10V | ±20V | 3500pF @ 30V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 30V 100A LFPAK |
618.078 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 3mOhm @ 15A, 10V | 2.15V @ 1mA | 45.8nC @ 10V | ±20V | 2822pF @ 12V | - | 81W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 32A TO252 |
604.554 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 5A (Ta), 32A (Tc) | 4.5V, 10V | 37mOhm @ 10A, 10V | 2.7V @ 250µA | 44nC @ 10V | ±20V | 2000pF @ 50V | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 10A 8-SOIC |
33.024 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 20mOhm @ 5.6A, 10V | 1V @ 250µA | 92nC @ 10V | ±20V | 1700pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 40V 6-MLP |
24.702 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 10A (Tc) | 4.5V, 10V | 14mOhm @ 10A, 10V | 3V @ 250µA | 20nC @ 10V | ±20V | 1260pF @ 20V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-WDFN Exposed Pad |
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Nexperia |
MOSFET N-CH 40V LFPAK |
336.750 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 5.7mOhm @ 15A, 10V | 4V @ 1mA | 28.8nC @ 10V | ±20V | 1703pF @ 20V | - | 89W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Diodes Incorporated |
MOSFET N-CH 250V 310MA SOT223 |
279.144 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 310mA (Ta) | 2.5V, 10V | 8.5Ohm @ 500mA, 10V | 1.8V @ 1mA | 3.65nC @ 10V | ±40V | 72pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET P-CH 60V 16A POWERPAK1212 |
43.584 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 16A (Tc) | 4.5V, 10V | 65mOhm @ 5.7A, 10V | 2.5V @ 250µA | 38nC @ 10V | ±20V | 1385pF @ 25V | - | 53W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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ON Semiconductor |
MOSFET P-CH 30V POWER33 |
396.396 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 11.5A (Ta), 20A (Tc) | 4.5V, 10V | 10mOhm @ 11.5A, 10V | 3V @ 250µA | 91nC @ 10V | ±25V | 3970pF @ 15V | - | 2.3W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET P-CH 20V 40A 1212-8S |
27.318 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 40A (Tc) | 2.5V, 10V | 3.6mOhm @ 20A, 10V | 1.1V @ 250µA | 225nC @ 10V | ±12V | 6600pF @ 10V | - | 4.8W (Ta), 57W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S (3.3x3.3) | PowerPAK® 1212-8S |
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STMicroelectronics |
MOSFET P-CH 40V 8A PWRFLAT8 |
75.738 |
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STripFET™ F6 | P-Channel | MOSFET (Metal Oxide) | 40V | - | 4.5V, 10V | 20.5mOhm @ 4A, 10V | 2.5V @ 250µA | 22nC @ 4.5V | ±20V | 2850pF @ 25V | - | 2.9W (Ta) | 150°C (TJ) | Surface Mount | PowerFlat™ (3.3x3.3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 100V 30A TO252-3 |
492.294 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 30A (Tc) | 4.5V, 10V | 31mOhm @ 30A, 10V | 2.4V @ 29µA | 31nC @ 10V | ±20V | 1976pF @ 25V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 100V 500MA SOT223 |
20.598 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 500mA (Ta) | 10V | 4Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 75pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET P-CH 40V 8.2A 8SOIC |
193.518 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 40V | 8.2A (Ta) | 4.5V, 10V | 27mOhm @ 8.2A, 10V | 3V @ 250µA | 27nC @ 5V | ±20V | 1872pF @ 20V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET P-CH 450V 0.075A SOT223 |
286.560 |
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- | P-Channel | MOSFET (Metal Oxide) | 450V | 75mA (Ta) | 10V | 150Ohm @ 50mA, 10V | 4.5V @ 1mA | - | ±20V | 120pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET P-CH 12V 12A SC70-6 |
218.808 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 12A (Tc) | 1.5V, 4.5V | 29mOhm @ 6.7A, 4.5V | 1V @ 250µA | 57nC @ 8V | ±8V | 1800pF @ 10V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Vishay Siliconix |
MOSFET N-CH 20V 30A PPAK SO-8 |
109.230 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 30A (Tc) | 4.5V, 10V | 5.5mOhm @ 20A, 10V | 2.5V @ 250µA | 35nC @ 10V | ±20V | 1250pF @ 10V | - | 4.8W (Ta), 41.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 30V 14.9A 8SOIC |
98.394 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 14.9A (Tc) | 4.5V, 10V | 12.5mOhm @ 10A, 10V | 2.5V @ 250µA | 86nC @ 10V | ±25V | 2550pF @ 15V | - | 2.7W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 8V 12A SC70-6 |
53.280 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 8V | 12A (Tc) | 1.2V, 4.5V | 11mOhm @ 9.7A, 4.5V | 800mV @ 250µA | 32nC @ 5V | ±5V | 1800pF @ 4V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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ON Semiconductor |
MOSFET N-CH 60V 200MA TO-92 |
602.118 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 3V @ 1mA | - | ±20V | 50pF @ 25V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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STMicroelectronics |
MOSFET N-CH 600V 1A DPAK |
88.512 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 1A (Tc) | 10V | 8.5Ohm @ 500mA, 10V | 3.7V @ 250µA | 10nC @ 10V | ±30V | 156pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 200V 320MA SOT223 |
26.646 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 320mA (Ta) | 3V, 5V | 10Ohm @ 250mA, 5V | 1.5V @ 1mA | - | ±20V | 85pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 800V 1.9A TO252-3 |
120.822 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 800V | 1.9A (Tc) | 10V | 2.8Ohm @ 1.1A, 10V | 3.9V @ 120µA | 12nC @ 10V | ±20V | 290pF @ 100V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 40V 100A LFPAK |
1.116.426 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4.2mOhm @ 15A, 10V | 4V @ 1mA | 38nC @ 10V | ±20V | 2410pF @ 20V | - | 106W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |