Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 19/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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ON Semiconductor |
MOSFET P-CH 30V 13A 8-SOIC |
158.856 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 9.3mOhm @ 13A, 10V | 3V @ 250µA | 96nC @ 10V | ±25V | 3845pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 40V 5A SOT223 |
550.950 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 5A (Ta) | 4.5V, 10V | 50mOhm @ 4.5A, 10V | 1V @ 250µA | 18.2nC @ 10V | ±20V | 770pF @ 40V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CHANNEL 40V 50A 8TDSON |
295.884 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 7V, 10V | 5.8mOhm @ 25A, 10V | 3.4V @ 13µA | 18nC @ 10V | ±20V | 1090pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-33 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 8TDSON |
128.622 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 40A (Tc) | 4.5V, 10V | 7.4mOhm @ 20A, 10V | 2V @ 10µA | 17nC @ 10V | ±16V | 920pF @ 25V | - | 34W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET P-CH 30V 5.7A 8-SOIC |
115.032 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 5.7A (Ta) | 4.5V, 10V | 30mOhm @ 7.5A, 10V | 3V @ 250µA | 20nC @ 5V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Texas Instruments |
MOSFET N-CH 25V 56A 8-SON |
121.398 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 14A (Ta), 56A (Tc) | 4.5V, 10V | 10mOhm @ 10A, 10V | 2.3V @ 250µA | 3.8nC @ 4.5V | +16V, -12V | 570pF @ 12.5V | - | 2.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (3.3x3.3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 40A TSDSON-8 |
95.718 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta), 40A (Tc) | 4.5V, 10V | 2.6mOhm @ 20A, 10V | 2V @ 250µA | 26nC @ 10V | ±20V | 1700pF @ 15V | - | 2.1W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 93A TDSON-8 |
37.914 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 93A (Tc) | 4.5V, 10V | 4.2mOhm @ 30A, 10V | 2.2V @ 250µA | 42nC @ 10V | ±20V | 3500pF @ 15V | - | 2.5W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 3A SOT223 |
53.982 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 3A (Ta) | 5V | 120mOhm @ 1.5A, 5V | 2V @ 250µA | 15nC @ 5V | ±15V | 440pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET P-CH 100V 8.8A DPAK |
824.658 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 8.8A (Tc) | 4.5V, 10V | 195mOhm @ 3.6A, 10V | 2.5V @ 250µA | 34.8nC @ 10V | ±20V | 1055pF @ 50V | - | 2.5W (Ta), 32.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET P-CH 20V 28A 8DFN |
681.534 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 28A (Ta), 50A (Tc) | 1.5V, 4.5V | 5mOhm @ 20A, 4.5V | 900mV @ 250µA | 100nC @ 4.5V | ±8V | 5626pF @ 10V | - | 6.2W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET P-CH 150V 0.8A 3SSOT |
96.438 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 150V | 800mA (Ta) | 6V, 10V | 1.2Ohm @ 800mA, 10V | 4V @ 250µA | 4.1nC @ 10V | ±25V | 210pF @ 75V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 100V 18A TSDSON-8 |
314.328 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 5.3A (Ta), 18A (Tc) | 6V, 10V | 44mOhm @ 12A, 10V | 2.7V @ 12µA | 9.1nC @ 10V | ±20V | 640pF @ 50V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 100V 43A LFPAK |
67.848 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 43A (Tc) | 10V | 20.5mOhm @ 15A, 10V | 4V @ 1mA | 41nC @ 10V | ±20V | 2210pF @ 50V | - | 106W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Diodes Incorporated |
MOSFET N-CH 60V 710MA SOT223 |
168.138 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 710mA (Ta) | 10V | 2Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 75pF @ 18V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 450V 140MA SOT223 |
78.246 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 140mA (Ta) | 10V | 50Ohm @ 100mA, 10V | 3V @ 1mA | - | ±20V | 70pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET P-CH 200V 5.7A DPAK |
568.890 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 200V | 5.7A (Tc) | 10V | 690mOhm @ 2.85A, 10V | 5V @ 250µA | 25nC @ 10V | ±30V | 770pF @ 25V | - | 2.5W (Ta), 55W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO252-3 |
52.536 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 12mOhm @ 50A, 10V | 2.2V @ 20µA | 40nC @ 10V | ±16V | 2890pF @ 25V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 18.5A 6PQFN |
82.512 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 18.5A (Tc) | 4.5V, 10V | 17mOhm @ 11A, 10V | 2.3V @ 10µA | 8nC @ 4.5V | ±20V | 660pF @ 25V | - | 11.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-VDFN Exposed Pad |
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Vishay Siliconix |
MOSFET P-CH 40V 16A |
1.514.100 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 16A (Tc) | 4.5V, 10V | 29mOhm @ 12A, 10V | 2.5V @ 250µA | 21.2nC @ 4.5V | ±20V | 1875pF @ 20V | - | 62.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Texas Instruments |
60V N CH MOSFET |
7.848 |
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* | - | - | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | Surface Mount | 8-VSON (3.3x3.3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET P-CH 30V 8A 8-SOIC |
75.126 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 8A (Tc) | 4.5V, 10V | 20mOhm @ 8A, 10V | 1V @ 250µA | 60nC @ 10V | ±20V | 2320pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 30V 35A 1212-8 PPAK |
56.412 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 12.3mOhm @ 13.9A, 10V | 2.5V @ 250µA | 59nC @ 10V | ±25V | 1800pF @ 15V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Diodes Incorporated |
MOSFET P-CH 100V 3A DPAK |
47.184 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 3A (Ta) | 6V, 10V | 235mOhm @ 2.1A, 10V | 4V @ 250µA | 16.5nC @ 10V | ±20V | 717pF @ 50V | - | 2.15W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 55V 11A DPAK |
251.484 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 11A (Tc) | 10V | 175mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 350pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 60V 14A 8WDFN |
19.931 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 6A (Ta) | 4.5V, 10V | 52mOhm @ 7A, 10V | 3V @ 250µA | 25nC @ 10V | ±20V | 1258pF @ 25V | - | 3.2W (Ta), 21W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 30V 13.6A 8-SOIC |
201.156 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13.6A (Ta) | 4.5V, 10V | 9.1mOhm @ 13A, 10V | 1V @ 250µA | 14nC @ 4.5V | ±20V | 1010pF @ 15V | - | 2.5W (Ta) | -55°C ~ 155°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET P-CH 30V 32A 8DFN |
533.982 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 85A (Tc) | 6V, 10V | 4.5mOhm @ 20A, 10V | 2.6V @ 250µA | 105nC @ 10V | ±25V | 3505pF @ 15V | - | 7.3W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Texas Instruments |
MOSFET P-CH 20V 76A 8SON |
2.323.998 |
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NexFET™ | P-Channel | MOSFET (Metal Oxide) | 20V | 76A (Tc) | 1.8V, 4.5V | 8.9mOhm @ 10A, 4.5V | 1.15V @ 250µA | 9.7nC @ 4.5V | ±12V | 1790pF @ 10V | - | 2.8W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (3.3x3.3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 55V 3.8A SOT223 |
122.520 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 3.8A (Ta) | 4V, 10V | 40mOhm @ 3.8A, 10V | 2V @ 250µA | 48nC @ 10V | ±16V | 870pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |