Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 16/999
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Alpha & Omega Semiconductor |
MOSFET P-CH 40V 40A TO252 |
1.383.978 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 40A (Tc) | 4.5V, 10V | 15mOhm @ 20A, 10V | 3V @ 250µA | 55nC @ 10V | ±20V | 2550pF @ 20V | - | 2.5W (Ta), 62.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 1.5A SOT223 |
274.044 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 1.5A (Tc) | 4V, 5V | 540mOhm @ 900mA, 5V | 2V @ 250µA | 6.1nC @ 5V | ±10V | 250pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET P-CH 30V 11.4A 8-SOIC |
206.580 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 11.4A (Tc) | 4.5V, 10V | 24mOhm @ 9.1A, 10V | 3V @ 250µA | 50nC @ 10V | ±20V | 1350pF @ 15V | - | 2.5W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET P-CH 60V 6.2A 8SOIC |
652.026 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 6.2A (Ta) | 4.5V, 10V | 40mOhm @ 6.2A, 10V | 3V @ 250µA | 55nC @ 10V | ±20V | 2900pF @ 30V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 60V 46A DPAK |
1.123.776 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 46A (Tc) | 4.5V, 10V | 16mOhm @ 20A, 10V | 2V @ 250µA | 29nC @ 10V | ±20V | 1400pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS Integrated Circuits Division |
MOSFET N-CH 250V 360MA SOT-89 |
59.496 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 360mA (Ta) | 0V | 4Ohm @ 200mA, 0V | - | - | ±15V | 350pF @ 25V | Depletion Mode | 1.1W (Ta) | -55°C ~ 125°C (TA) | Surface Mount | SOT-89-3 | TO-243AA |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 92A TSON |
947.442 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 40V | 92A (Tc) | 4.5V, 10V | 3.7mOhm @ 46A, 10V | 2.4V @ 0.2mA | 27nC @ 10V | ±20V | 2500pF @ 20V | - | 960mW (Ta), 81W (Tc) | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET P-CH 40V 2.3A SOT23-3 |
841.200 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 2.3A (Ta) | 4.5V, 10V | 82mOhm @ 3A, 10V | 3V @ 250µA | 17nC @ 10V | ±20V | 470pF @ 20V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 35A 1212-8S |
616.662 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 35A (Tc) | 2.5V, 10V | 4.4mOhm @ 20A, 10V | 1.5V @ 250µA | 183nC @ 10V | ±12V | 5590pF @ 10V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Diodes Incorporated |
MOSFET P-CH 100V 0.6A SOT23-3 |
272.910 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 600mA (Ta) | 6V, 10V | 1Ohm @ 600mA, 10V | 4V @ 250µA | 1.8nC @ 5V | ±20V | 141pF @ 50V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 20V 2.3A SOT23-6 |
95.136 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 2.3A (Ta) | 2.7V, 4.5V | 200mOhm @ 1.6A, 4.5V | 700mV @ 250µA | 5.8nC @ 4.5V | ±12V | 320pF @ 15V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Vishay Siliconix |
MOSFET P-CH 30V 11.4A 8SOIC |
38.730 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 11.4A (Tc) | 4.5V, 10V | 24mOhm @ 9.1A, 10V | 3V @ 250µA | 50nC @ 10V | ±20V | 1350pF @ 15V | - | 2.5W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 20V 6A SOT-23 |
21.954 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Tc) | 1.8V, 4.5V | 39mOhm @ 4.6A, 4.5V | 1V @ 250µA | 25nC @ 4.5V | ±8V | 1090pF @ 10V | - | 1.25W (Ta), 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 60V 15A DPAK |
238.272 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 60V | 15A (Ta) | 4.5V, 10V | 100mOhm @ 4.5A, 10V | 3V @ 250µA | 24nC @ 10V | ±20V | 759pF @ 30V | - | 3.8W (Ta), 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 100V 1.6A SOT23-6 |
128.424 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 1.6A (Ta) | 4.3V, 10V | 230mOhm @ 1.6A, 10V | 3V @ 250µA | 9.2nC @ 10V | ±20V | 497pF @ 50V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 100V 9.4A DPAK |
115.776 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 9.4A (Tc) | 10V | 210mOhm @ 5.6A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 330pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 100V 21.7A DPAK |
193.956 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 21.7A (Tc) | 10V | 75mOhm @ 13A, 10V | 4V @ 1mA | - | ±20V | 1210pF @ 25V | - | 89W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 11A 8-PQFN |
29.172 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 24A (Tc) | 10V, 20V | 10mOhm @ 11A, 20V | 2.4V @ 25µA | 48nC @ 10V | ±25V | 1543pF @ 25V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (3x3) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 6.3A SOT-223 |
99.912 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 6.3A (Ta) | 2.5V, 4.5V | 45mOhm @ 6.3A, 4.5V | 1V @ 250µA | 15nC @ 4.5V | ±8V | 500pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 60V 20A TSDSON-8 |
254.220 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 10V | 11mOhm @ 20A, 10V | 4V @ 23µA | 33nC @ 10V | ±20V | 2700pF @ 30V | - | 2.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 800V 0.3A TO-92 |
219.372 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 800V | 300mA (Tc) | 10V | 16Ohm @ 500mA, 10V | 4.5V @ 50µA | 7.7nC @ 10V | ±30V | 160pF @ 25V | - | 3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Nexperia |
MOSFET N-CH 100V 7A SOT223 |
265.524 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 7A (Tc) | 4.5V, 10V | 72mOhm @ 8A, 10V | 2V @ 1mA | - | ±10V | 1690pF @ 25V | - | 8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-73 | TO-261-4, TO-261AA |
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Microchip Technology |
MOSFET N-CH 500V 0.013A SOT23-3 |
155.172 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 13mA (Tj) | 0V | 1000Ohm @ 500µA, 0V | - | - | ±20V | 10pF @ 25V | Depletion Mode | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 1.1A SOT223 |
100.872 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 1.1A (Tc) | 10V | 1.2Ohm @ 660mA, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | 200pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 30V 9.5A 8-SOIC |
49.374 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 9.5A (Ta) | 4.5V, 10V | 8.5mOhm @ 13.5A, 10V | 3V @ 250µA | 50nC @ 10V | ±20V | - | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 55V 17A DPAK |
100.566 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 75mOhm @ 10A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 370pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 30V 6.8A MLP2X2 |
775.218 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 6.8A (Ta) | 4.5V, 10V | 35mOhm @ 6.8A, 10V | 3V @ 250µA | 24nC @ 10V | ±25V | 1070pF @ 15V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
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Nexperia |
MOSFET N-CH 55V 12A SOT223 |
759.276 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 12A (Tc) | 4.5V, 10V | 29mOhm @ 8A, 10V | 2V @ 1mA | - | ±10V | 1594pF @ 25V | - | 8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-73 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 100V 6.6A DPAK |
20.988 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 6.6A (Tc) | 10V | 480mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 350pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 60V 1.7A SOT223 |
81.444 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 1.7A (Ta) | 4.5V, 10V | 390mOhm @ 900mA, 10V | 1V @ 250µA | 5.9nC @ 10V | ±20V | 219pF @ 30V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |