Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 15/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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ON Semiconductor |
MOSFET P-CH 20V 1.5A SC70-6 |
232.728 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 2.5V, 4.5V | 145mOhm @ 1.5A, 4.5V | 1.5V @ 250µA | 6nC @ 4.5V | ±12V | 337pF @ 10V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-88 (SC-70-6) | 6-TSSOP, SC-88, SOT-363 |
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ON Semiconductor |
MOSFET N-CH 30V 1.6A SSOT3 |
242.754 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 1.6A (Ta) | 4.5V, 10V | 85mOhm @ 1.9A, 10V | 2V @ 250µA | 5nC @ 5V | ±20V | 245pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 80A TSON |
130.638 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 3.7mOhm @ 40A, 10V | 2.4V @ 0.2mA | 27nC @ 10V | ±20V | 2500pF @ 20V | - | 630mW (Ta), 86W (Tc) | 175°C | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 80V 23A TDSON-8 |
259.758 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 7A (Ta), 23A (Tc) | 6V, 10V | 34mOhm @ 12A, 10V | 3.5V @ 12µA | 9.1nC @ 10V | ±20V | 756pF @ 40V | - | 2.5W (Ta), 32W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 5A MICROFET |
340.440 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 2.5V, 4.5V | 40mOhm @ 5A, 4.5V | 1.5V @ 250µA | 11nC @ 4.5V | ±12V | 800pF @ 10V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
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Diodes Incorporated |
MOSFET N-CH 60V .15MA SOT23-3 |
84.312 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 150µA (Ta) | 10V | 5Ohm @ 200mA, 10V | 3V @ 1mA | - | ±20V | 60pF @ 10V | - | 330mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 20A 1212-8 |
23.100 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Tc) | 4.5V, 10V | 5.1mOhm @ 10A, 10V | 2.2V @ 250µA | 29nC @ 10V | +20V, -16V | 1450pF @ 15V | - | 3.57W (Ta), 26.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Nexperia |
MOSFET N-CH 80V 34A LFPAK |
177.066 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 34A (Tc) | 10V | 27.5mOhm @ 5A, 10V | 4V @ 1mA | 20nC @ 10V | ±20V | 1200pF @ 40V | - | 74W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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ON Semiconductor |
MOSFET N-CH 600V 0.2A SOT-223-4 |
233.820 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 600V | 200mA (Tc) | 10V | 11.5Ohm @ 100mA, 10V | 4V @ 250µA | 6.2nC @ 10V | ±30V | 170pF @ 25V | - | 2.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 60V 12A DPAK |
325.248 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 12A (Ta) | 5V | 104mOhm @ 6A, 5V | 2V @ 250µA | 20nC @ 5V | ±15V | 440pF @ 25V | - | 1.5W (Ta), 48W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 20V 17.5A POWERDI |
193.704 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 17.5A (Ta), 40A (Tc) | 1.5V, 4.5V | 5.2mOhm @ 15A, 4.5V | 1V @ 250µA | 140nC @ 10V | ±10V | 5404pF @ 10V | - | 2.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET P-CH 12V 4.1A SOT23-3 |
1.270.224 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 4.1A (Ta) | 1.8V, 4.5V | 32mOhm @ 5.3A, 4.5V | 1V @ 250µA | 18nC @ 4.5V | ±8V | 1100pF @ 6V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 2.9A SOT23-3 |
326.628 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 2.9A (Ta) | 4.5V, 10V | 50mOhm @ 3.4A, 10V | 800mV @ 250µA (Min) | 7nC @ 10V | ±20V | 215pF @ 15V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 2.9A 6-TSOP |
261.168 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 2.9A (Tc) | 4.5V, 10V | 216mOhm @ 2.2A, 10V | 3V @ 250µA | 12nC @ 10V | ±20V | 350pF @ 30V | - | 2W (Ta), 3.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET N-CH 100V 1.15A SOT23-3 |
223.536 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 1.15A (Ta) | 10V | 250mOhm @ 1.5A, 10V | 4V @ 250µA | 5nC @ 10V | ±20V | - | - | 730mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 100V 1.3A SOT23-6 |
577.782 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 1.3A (Ta) | 6V, 10V | 350mOhm @ 1.4A, 10V | 4V @ 250µA | 6.1nC @ 5V | ±20V | 424pF @ 50V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
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Rohm Semiconductor |
MOSFET P-CH 100V 1.5A TSMT |
213.462 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 1.5A (Ta) | 4V, 10V | 470mOhm @ 1.5A, 10V | 2.5V @ 1mA | 322nC @ 10V | ±20V | 950pF @ 25V | - | 600mW (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 100V 1.6A SOT223 |
359.238 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 1.6A (Ta) | 10V | 200mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 330pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Nexperia |
MOSFET N-CH 100V 18A LFPAK33 |
320.574 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 18A (Tj) | 10V | 71mOhm @ 5A, 10V | 4V @ 1mA | 16.4nC @ 10V | ±20V | 773pF @ 50V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 |
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ON Semiconductor |
MOSFET N-CH 100V 2.3A SOT-223 |
209.418 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 2.3A (Ta) | 10V | 200mOhm @ 1.15A, 10V | 4V @ 250µA | 22nC @ 10V | ±20V | 480pF @ 25V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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Nexperia |
MOSFET N-CH 60V 44A LFPAK |
514.374 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 44A (Tc) | 10V | 15.7mOhm @ 15A, 10V | 4V @ 1mA | 20nC @ 10V | ±20V | 1172pF @ 30V | - | 74W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Vishay Siliconix |
MOSFET P-CH 20V 12A SC-70-6 |
317.040 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 12A (Tc) | 1.8V, 4.5V | 18mOhm @ 7.6A, 4.5V | 1.2V @ 250µA | 75nC @ 8V | ±12V | - | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Vishay Siliconix |
MOSFET P-CH 12V 8A 6-TSOP |
255.420 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 8A (Tc) | 1.8V, 4.5V | 22mOhm @ 8.1A, 4.5V | 1V @ 250µA | 65nC @ 8V | ±8V | 2010pF @ 6V | - | 2W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET P-CH 60V 6TSOP |
233.058 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 5.3A (Tc) | 10V | 95mOhm @ 4.5A, 10V | 2.5V @ 250µA | 22nC @ 10V | ±20V | 1000pF @ 30V | - | 5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET N-CH 20V 3.77A SOT23-3 |
146.928 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 3.77A (Ta) | 1.8V, 4.5V | 33mOhm @ 5A, 4.5V | 950mV @ 250µA | 14nC @ 4.5V | ±12V | - | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 30V 50A 1212-8 |
24.390 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 10.6mOhm @ 11A, 10V | 2.5V @ 250µA | 66nC @ 10V | ±25V | 1930pF @ 15V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Infineon Technologies |
MOSFET N-CH 25V 12A TSDSON-8 |
37.032 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 12A (Ta), 40A (Tc) | 4.5V, 10V | 6mOhm @ 20A, 10V | 2V @ 250µA | 9.1nC @ 10V | ±20V | 670pF @ 12V | - | 2.1W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 600V 300MA SOT223 |
334.656 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 300mA (Tc) | 10V | 15Ohm @ 400mA, 10V | 4.5V @ 50µA | 6.9nC @ 10V | ±30V | 94pF @ 25V | - | 3.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 60V 3A SOT223 |
48.870 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 3A (Ta) | 5V | 120mOhm @ 1.5A, 5V | 2V @ 250µA | 15nC @ 5V | ±15V | 440pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Texas Instruments |
MOSFET N-CH 30V 35A 8VSON |
719.976 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Ta) | 4.5V, 10V | 4.8mOhm @ 16A, 10V | 1.8V @ 250µA | 35nC @ 10V | ±20V | 2310pF @ 15V | - | 2.8W (Ta), 53W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (3x3.15) | 8-PowerVDFN |