Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 14/999
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Rohm Semiconductor |
MOSFET N-CH 250V 0.5A SC-96-3 |
110.322 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 500mA (Ta) | 4V, 10V | 8.8Ohm @ 250mA, 10V | 3V @ 1mA | 3.5nC @ 10V | ±20V | 70pF @ 25V | - | 540mW (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Nexperia |
MOSFET N-CH 75V 20.73A LFPAK |
725.784 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 20.73A (Tc) | 5V, 10V | 53mOhm @ 10A, 10V | 2.15V @ 1mA | 10.7nC @ 5V | ±15V | 1137pF @ 25V | - | 60.4W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 100V 14.8A LFPAK |
254.238 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 14.8A (Tc) | 5V, 10V | 99mOhm @ 5A, 10V | 2.15V @ 1mA | 11nC @ 5V | ±15V | 1139pF @ 25V | - | 59W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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ON Semiconductor |
MOSFET P-CH 30V 8.8A 8-SOIC |
122.406 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 8.8A (Ta) | 4.5V, 10V | 20mOhm @ 8.8A, 10V | 3V @ 250µA | 40nC @ 10V | ±25V | 1845pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CHAN 40V SO23 |
154.500 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 4.1A (Tc) | 4.5V, 10V | 94mOhm @ 10A, 10V | 2.5V @ 250µA | 12nC @ 10V | ±20V | 420pF @ 20V | - | 3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 60V 0.9A SOT23-3 |
54.144 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 900mA (Ta) | 4.5V, 10V | 400mOhm @ 900mA, 10V | 3V @ 250µA | 2.9nC @ 4.5V | ±20V | 219pF @ 30V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Texas Instruments |
MOSFET NCH 100V 14.4A SON |
110.568 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 14.4A (Ta) | 6V, 10V | 59mOhm @ 5A, 10V | 3.8V @ 250µA | 5.6nC @ 10V | ±20V | 454pF @ 50V | - | 2.5W (Ta), 20.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WSON (2x2) | 6-WDFN Exposed Pad |
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Alpha & Omega Semiconductor |
MOSFET P-CH 60V 4A 8-SOIC |
253.134 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 4A (Ta) | 4.5V, 10V | 100mOhm @ 4A, 10V | 3V @ 250µA | 20nC @ 10V | ±20V | 1120pF @ 30V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 30V 2.9A SOT23-3 |
1.029.378 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 2.9A (Ta) | 2.5V, 4.5V | 80mOhm @ 3.1A, 4.5V | 700mV @ 250µA | 6.7nC @ 4.5V | ±12V | 568pF @ 15V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 100V .1A SOT23-3 |
251.094 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 100mA (Ta) | 10V | 10Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 40pF @ 25V | - | 330mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 3.7A SOT23-3 |
561.498 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 3.7A (Ta) | 1.8V, 4.5V | 39mOhm @ 4.7A, 4.5V | 1V @ 250µA | 19nC @ 4.5V | ±8V | 1020pF @ 10V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 3.7A SOT23-3 |
121.908 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 3.7A (Ta) | 1.8V, 4.5V | 39mOhm @ 4.7A, 4.5V | 1V @ 250µA | 19nC @ 4.5V | ±8V | 1020pF @ 10V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 30V 8A 6-SSOT |
129.018 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 8A (Ta), 8A (Tc) | 4.5V, 10V | 16mOhm @ 8A, 10V | 3V @ 250µA | 18nC @ 10V | ±20V | 1040pF @ 15V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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Texas Instruments |
MOSFET P-CH 8V 10A 9DSBGA |
237.774 |
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NexFET™ | P-Channel | MOSFET (Metal Oxide) | 8V | 10A (Ta) | 2.5V, 4.5V | 12.2mOhm @ 2A, 4.5V | 1.1V @ 250µA | 8.4nC @ 4.5V | -6V | 1390pF @ 4V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 9-DSBGA | 9-UFBGA, DSBGA |
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Vishay Siliconix |
MOSFET P-CH 30V 9A 8-SOIC |
66.558 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 9A (Tc) | 4.5V, 10V | 32mOhm @ 7A, 10V | 2.5V @ 250µA | 38nC @ 10V | ±20V | 1006pF @ 15V | - | 2.5W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 10.9A 8-SOIC |
41.430 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 10.9A (Ta) | 4.5V, 10V | 24mOhm @ 7.8A, 10V | 2.5V @ 250µA | 12nC @ 10V | ±20V | 435pF @ 15V | - | 2.4W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 40V 19A 8DFN |
1.736.376 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 19A (Ta), 30A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | 2.4V @ 250µA | 26nC @ 10V | ±20V | 1225pF @ 20V | - | 4.2W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 40V 50A TO252 |
770.538 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 13A (Ta), 50A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | 2.6V @ 250µA | 33nC @ 10V | ±20V | 1800pF @ 20V | - | 2.3W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 20V 3A 6WLCSP |
235.818 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 1.5V, 4.5V | 85mOhm @ 1A, 4.5V | 1.5V @ 250µA | 13nC @ 10V | ±8V | 800pF @ 10V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WLCSP (1.0x1.5) | 6-UFBGA, WLCSP |
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ON Semiconductor |
MOSFET N-CH 250V 4.4A DPAK |
53.970 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 4.4A (Tc) | 10V | 1.1Ohm @ 2.2A, 10V | 5V @ 250µA | 6nC @ 10V | ±30V | 250pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 40V 14A 8-SOIC |
685.200 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 14A (Ta) | 4.5V, 10V | 11.5mOhm @ 14A, 10V | 3V @ 250µA | 22nC @ 10V | ±20V | 1920pF @ 20V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET P-CH 100V 9A TO252 |
261.600 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 9A (Tc) | 4.5V, 10V | 240mOhm @ 5A, 10V | 3V @ 250µA | 17.5nC @ 10V | ±20V | 1239pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 100V 5.8A DPAK |
24.768 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 5.8A (Tc) | 5V, 10V | 350mOhm @ 2.9A, 10V | 2V @ 250µA | 6nC @ 5V | ±20V | 290pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 60V 9.4A DPAK |
609.498 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 9.4A (Tc) | 10V | 185mOhm @ 4.7A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 550pF @ 25V | - | 2.5W (Ta), 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 11.6A 8SOIC |
302.592 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 11.6A (Ta) | 4.5V, 10V | 10mOhm @ 11.6A, 10V | 2.5V @ 250µA | 30nC @ 10V | ±20V | 1235pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 55V 2A SOT223 |
261.168 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 2A (Ta) | 4V, 10V | 140mOhm @ 2A, 10V | 2V @ 250µA | 14nC @ 10V | ±16V | 230pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Texas Instruments |
MOSFET N-CH 30V 35A 8VSON |
14.347 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 7.3mOhm @ 10A, 10V | 1.9V @ 250µA | 22.2nC @ 10V | ±20V | 1590pF @ 15V | - | 3.2W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (3x3.15) | 8-PowerVDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 26A 8DFN |
335.730 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 26A (Ta), 32A (Tc) | 4.5V, 10V | 3mOhm @ 20A, 10V | 2.2V @ 250µA | 40nC @ 10V | ±20V | 1835pF @ 15V | - | 3.1W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 60V 3A SOT223 |
719.148 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 3A (Ta) | 4.5V, 10V | 125mOhm @ 2.2A, 10V | 1V @ 250µA | 17.7nC @ 10V | ±20V | 637pF @ 30V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Nexperia |
MOSFET N-CH 30V 95A LFPAK |
92.106 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 95A (Tc) | 4.5V, 10V | 4mOhm @ 25A, 10V | 2.2V @ 1mA | 19.4nC @ 10V | ±20V | 1272pF @ 15V | - | 64W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |