Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 13/999
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Teilenummer |
Hersteller |
Beschreibung |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Texas Instruments |
MOSFET P-CH 20V 48A 6SON |
583.746 |
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NexFET™ | P-Channel | MOSFET (Metal Oxide) | 20V | 20A (Ta) | 1.8V, 4.5V | 23.9mOhm @ 5A, 4.5V | 1.1V @ 250µA | 4.7nC @ 4.5V | ±8V | 655pF @ 10V | - | 2.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WSON (2x2) | 6-WDFN Exposed Pad |
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Diodes Incorporated |
MOSFET N-CH 60V 4.1A SOT223 |
613.746 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 4.1A (Ta) | 4.5V, 10V | 68mOhm @ 12A, 10V | 3V @ 250µA | 10.3nC @ 10V | ±20V | 502pF @ 30V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 60V 8.9A 6UDFN |
356.268 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 8.9A (Ta) | 4.5V, 10V | 16mOhm @ 10A, 10V | 3V @ 250µA | 17nC @ 10V | ±20V | 864pF @ 30V | - | 820mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Diodes Incorporated |
MOSFET N-CH 60V 200MA SOT23-3 |
341.106 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 5V, 10V | 2.5Ohm @ 500mA, 10V | 3V @ 1mA | - | ±20V | 35pF @ 25V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 100V 1.5A SOT23 |
22.626 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 1.5A (Ta) | 10V | 250mOhm @ 1.5A, 10V | 2.5V @ 250µA | 12nC @ 4.5V | ±20V | 975pF @ 25V | - | 1.38W (Ta) | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 20V 4.7A 6TSOP |
233.310 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 4.7A (Ta) | 2.5V, 4.5V | 67mOhm @ 4.7A, 4.5V | 1.2V @ 25µA | 12.4nC @ 10V | ±12V | 654pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET P-CH 40V 4.65A POWERDI |
121.944 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 4.65A (Ta) | 4.5V, 10V | 25mOhm @ 3A, 10V | 1.8V @ 250µA | 33.7nC @ 10V | ±20V | 1643pF @ 20V | - | 810mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 60V 6-SSOT |
631.398 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 4.3A (Ta) | 4.5V, 10V | 47mOhm @ 4.3A, 10V | 3V @ 250µA | 19nC @ 10V | ±20V | 763pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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Texas Instruments |
MOSFET N-CH 30V 5A 6SON |
269.310 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 5A (Tc) | 3V, 8V | 30mOhm @ 4A, 8V | 1.8V @ 250µA | 2.7nC @ 4.5V | +10V, -8V | 340pF @ 15V | - | 2.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WSON (2x2) | 6-WDFN Exposed Pad |
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Vishay Siliconix |
MOSFET P-CH 60V 2.5A SSOT23 |
204.954 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 2.8A (Tc) | 10V | 177mOhm @ 2.4A, 10V | 2.5V @ 250µA | 12nC @ 10V | ±20V | 550pF @ 30V | - | 2W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | - | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 2.7A SC70-6 |
368.292 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 2.7A (Tc) | 2.5V, 10V | 80mOhm @ 2A, 10V | 1.5V @ 250µA | 8.5nC @ 4.5V | ±12V | 470pF @ 10V | - | 1.5W (Ta), 2.78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |
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Vishay Siliconix |
MOSFET P-CH 20V 5A 6-TSOP |
380.898 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 5A (Ta) | 4.5V, 10V | 30mOhm @ 6.7A, 10V | 3V @ 250µA | 30nC @ 10V | ±20V | - | - | 1.14W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 30V 39A TDSON-8 |
147.438 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 39A (Tc) | 4.5V, 10V | 12mOhm @ 30A, 10V | 2V @ 250µA | 20nC @ 10V | ±20V | 1500pF @ 15V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 2A SC70-6 |
334.368 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4.5V, 10V | 120mOhm @ 2A, 10V | 3V @ 250µA | 4nC @ 5V | ±20V | 220pF @ 15V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-88 (SC-70-6) | 6-TSSOP, SC-88, SOT-363 |
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STMicroelectronics |
MOSFET N-CH 600V 400MA TO-92 |
29.280 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 400mA (Tc) | 10V | 8.5Ohm @ 500mA, 10V | 3.7V @ 250µA | 10nC @ 10V | ±30V | 156pF @ 25V | - | 3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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ON Semiconductor |
MOSFET P-CH 60V 2.5A SOT-223-4 |
394.848 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 2.5A (Ta) | 4.5V, 10V | 300mOhm @ 2.5A, 10V | 4V @ 250µA | 15nC @ 10V | ±20V | 601pF @ 30V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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Nexperia |
MOSFET N-CH 60V 29A LFPAK |
61.362 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 29A (Tc) | 10V | 24.7mOhm @ 15A, 10V | 4V @ 1mA | 13nC @ 10V | ±20V | 686pF @ 30V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 28A 8-DFN |
1.003.416 |
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AlphaMOS | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta), 28A (Tc) | 2.5V, 10V | 3.3mOhm @ 20A, 10V | 1.2V @ 250µA | 50nC @ 10V | ±12V | 2250pF @ 15V | - | 3.1W (Ta), 32W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerVDFN |
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Nexperia |
MOSFET N-CH 40V 25A LFPAK |
620.814 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 25A (Tc) | 5V | 25mOhm @ 5A, 10V | 2.1V @ 1mA | 5nC @ 5V | ±10V | 664pF @ 25V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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ON Semiconductor |
MOSFET P-CH 200V 0.67A SOT-223 |
293.802 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 200V | 670mA (Tc) | 10V | 2.7Ohm @ 335mA, 10V | 5V @ 250µA | 8nC @ 10V | ±30V | 250pF @ 25V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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Rohm Semiconductor |
MOSFET P-CH 30V 12A HSMT8 |
59.790 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 8mOhm @ 12A, 10V | 2.5V @ 1mA | 62nC @ 10V | ±20V | 3200pF @ 15V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Nexperia |
MOSFET N-CH 240V 375MA SOT223 |
118.800 |
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- | N-Channel | MOSFET (Metal Oxide) | 240V | 375mA (Ta) | 4.5V, 10V | 5Ohm @ 340mA, 10V | 2V @ 1mA | - | ±20V | 120pF @ 25V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | SC-73 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 4SOT223 |
22.374 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 350mA (Ta) | 2.8V, 10V | 6Ohm @ 350mA, 10V | 1.4V @ 108µA | 6.8nC @ 10V | ±20V | 95pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET P-CH 60V 3A SSOT-6 |
343.800 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 60V | 3A (Ta) | 4.5V, 10V | 105mOhm @ 3A, 10V | 3V @ 250µA | 24nC @ 10V | ±20V | 759pF @ 30V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET P-CH 30V 18A PPAK 1212-8 |
313.200 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 18A (Tc) | 4.5V, 10V | 9.4mOhm @ 15A, 10V | 2.5V @ 250µA | 110nC @ 10V | ±20V | 4280pF @ 15V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Diodes Incorporated |
MOSFET P-CH 60V 3A SOT-23-6 |
140.292 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 2.3A (Ta) | 4.5V, 10V | 125mOhm @ 2.3A, 10V | 3V @ 250µA | 17.7nC @ 10V | ±20V | 637pF @ 30V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
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Diodes Incorporated |
MOSFET P-CH 40V 7.2A POWERDI3333 |
116.952 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 40V | 7.2A (Ta) | 4.5V, 10V | 25mOhm @ 3A, 10V | 1.8V @ 250µA | 33.7nC @ 10V | ±20V | 1643pF @ 20V | - | 810mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 30V 3.2A SOT23-3 |
51.102 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 3.2A (Ta) | 4.5V, 10V | 65mOhm @ 3.2A, 10V | 1V @ 250µA | 8.6nC @ 10V | ±20V | 448pF @ 15V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 12V 12A 6QFN |
85.086 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 12V | 12A (Ta) | 1.8V, 4.5V | 12.5mOhm @ 12A, 4.5V | 1V @ 250µA | 34nC @ 4.5V | ±8V | 3957pF @ 6V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-WDFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 80V 23A TSDSON-8 |
146.436 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 6A (Ta), 23A (Tc) | 6V, 10V | 34mOhm @ 12A, 10V | 3.5V @ 12µA | 9.1nC @ 10V | ±20V | 630pF @ 40V | - | 2.1W (Ta), 32W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |