Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 194/999
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Nexperia |
MOSFET N-CH 60V SGL 3-DFN1006B |
5.346 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 350mA (Ta) | 5V, 10V | 2.8Ohm @ 200mA, 10V | 2.1V @ 250µA | 1nC @ 10V | ±20V | 23.6pF @ 10V | - | 350mW (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006B-3 | 3-XFDFN |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 30V 1.3A SOT23 |
4.446 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 1.3A (Ta) | 4.5V, 10V | 180mOhm @ 1.3A, 10V | 3V @ 250µA | 3.2nC @ 4.5V | ±20V | 565pF @ 10V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 30V 0.55A DMN3900 |
7.002 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 550mA (Ta) | 1.8V, 4.5V | 760mOhm @ 200mA, 4.5V | 950mV @ 250µA | 0.7nC @ 4.5V | ±8V | 42.2pF @ 25V | - | 390mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN0806-3 | 3-XFDFN |
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Diodes Incorporated |
MOSFET P-CH 12V 0.2A X2DFN-3 |
6.966 |
|
- | P-Channel | MOSFET (Metal Oxide) | 12V | 200mA (Ta) | 1.5V, 4.5V | 800mOhm @ 200mA, 4.5V | 1V @ 250µA | 0.84nC @ 4.5V | ±8V | 55.4pF @ 10V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN0806-3 | 3-XFDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 1.5A UFV |
7.038 |
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U-MOSIII | P-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.8V, 4V | 213mOhm @ 1A, 4V | 1V @ 1mA | 6.4nC @ 4V | ±8V | 250pF @ 10V | Schottky Diode (Isolated) | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFV | 6-SMD (5 Leads), Flat Lead |
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Diodes Incorporated |
MOSFET N-CH 30V 4.2A SC59 |
4.968 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 4.2A (Ta) | 4.5V, 10V | 40mOhm @ 4.2A, 10V | 2.1V @ 250µA | 13.2nC @ 10V | ±20V | 697pF @ 15V | - | 780mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET N-CH 30V 300MA SOT-323 |
4.968 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 300mA (Ta) | 4V, 10V | 1.2Ohm @ 300mA, 10V | - | - | ±20V | 20pF @ 10V | - | 200mW (Ta) | - | Surface Mount | UMT3 | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET N-CH 20V 750MA DFN1006H4 |
2.844 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 750mA (Ta) | 1.8V, 4.5V | 550mOhm @ 600mA, 4.5V | 900mV @ 250µA | 0.5nC @ 4.5V | ±12V | 36pF @ 16V | - | 470mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN1006-3 | 3-XFDFN |
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Diodes Incorporated |
MOSFET N-CH 12V 0.5A X2DFN-3 |
3.562 |
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- | N-Channel | MOSFET (Metal Oxide) | 12V | 500mA (Ta) | 1.5V, 4.5V | 366mOhm @ 200mA, 4.5V | 1V @ 250µA | 0.96nC @ 4.5V | ±8V | 60pF @ 10V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN0806-3 | 3-XFDFN |
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Rohm Semiconductor |
MOSFET N-CH 45V 20A CPT3 |
19.590 |
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- | N-Channel | MOSFET (Metal Oxide) | 45V | 20A (Ta) | 4V, 10V | 28mOhm @ 20A, 10V | 2.5V @ 1mA | 12nC @ 5V | ±20V | 950pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Central Semiconductor Corp |
MOSFET N-CH 30V 0.45A SOT883 |
6.948 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 450mA (Ta) | 1.8V, 4.5V | 460mOhm @ 200mA, 4.5V | 1V @ 250µA | 0.79nC @ 4.5V | 8V | 43pF @ 25V | - | 100mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-883VL | SC-101, SOT-883 |
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Rohm Semiconductor |
MOSFET N-CH 20V 0.2A VMT3 |
4.644 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.2V, 2.5V | 1.2Ohm @ 200mA, 2.5V | 1V @ 1mA | - | ±8V | 25pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VMT3 | SOT-723 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 1.4A CST3 |
4.374 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 1.4A (Ta) | 1.2V, 4.5V | 390mOhm @ 800mA, 4.5V | 1V @ 1mA | 1.6nC @ 4.5V | ±8V | 100pF @ 10V | - | 500mW (Ta) | 150°C | Surface Mount | CST3 | SC-101, SOT-883 |
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Nexperia |
MOSFET N-CH 20V 3QFN |
7.866 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 600mA (Ta) | 1.2V, 4.5V | 620mOhm @ 600mA, 4.5V | 950mV @ 250µA | 0.7nC @ 4.5V | ±8V | 21.3pF @ 10V | - | 360mW (Ta), 2.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006B-3 | 3-XFDFN |
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Vishay Siliconix |
MOSFET P-CHANNEL 20V 8A 6TSOP |
2.970 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 8A (Tc) | 1.8V, 4.5V | 24mOhm @ 7.5A, 4.5V | 1V @ 250µA | 30nC @ 4.5V | ±8V | 1825pF @ 10V | - | 3.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET P-CHANNEL 30V 3.4A 6TSOP |
5.616 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 3.4A (Tc) | 4.5V, 10V | 165mOhm @ 2.5A, 10V | 2.5V @ 250µA | 6.8nC @ 10V | ±20V | 155pF @ 15V | - | 3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET N-CH 60V 2.6A SOT23-3 |
3.240 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 60V | 2.6A (Tc) | 4.5V, 10V | 144mOhm @ 1.9A, 10V | 3V @ 250µA | 4nC @ 10V | ±20V | 105pF @ 30V | - | 1.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET 2N-CH 60V 6TSSOP |
5.256 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 270mA (Ta) | 5V, 10V | 2.8Ohm @ 200mA, 10V | 2.1V @ 250µA | 1nC @ 10V | ±20V | 23.6pF @ 10V | - | 310mW (Ta), 1.67W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP | 6-TSSOP, SC-88, SOT-363 |
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Central Semiconductor Corp |
MOSFET N-CH 20V 0.1A SOT883 |
3.454 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 3Ohm @ 10mA, 4V | 900mV @ 250µA | 0.57nC @ 4.5V | 10V | 9pF @ 3V | - | 100mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-883VL | SC-101, SOT-883 |
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Diodes Incorporated |
MOSFET N-CH 30V 2.6A SOT-323 |
7.794 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 2.6A (Ta) | 2.5V, 4.5V | 67mOhm @ 2.5A, 4.5V | 1.5V @ 250µA | 4.6nC @ 4.5V | ±12V | 447pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Rohm Semiconductor |
MOSFET P-CH 20V 0.1A VML1006 |
8.784 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.2V, 4.5V | 3.8Ohm @ 100mA, 4.5V | 1V @ 100µA | - | ±10V | 15pF @ 10V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | DFN1006-3 (VML1006) | SC-101, SOT-883 |
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ON Semiconductor |
MOSFET P-CH 20V 1.3A SOT23-3 |
3.114 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 1.3A (Ta) | 2.5V, 4.5V | 220mOhm @ 750mA, 4.5V | 1.25V @ 250µA | 5.5nC @ 4V | ±12V | 225pF @ 5V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CHAN 41V 60V X1-DFN1006 |
3.454 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 320mA (Ta) | 1.5V, 4V | 2Ohm @ 100mA, 4V | 1V @ 250µA | 0.9nC @ 4.5V | ±20V | 64pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1006-3 | 3-UFDFN |
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Diodes Incorporated |
MOSFET P-CH 20V 4.2A TSOT-26 |
3.708 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 1.8V, 4.5V | 65mOhm @ 4.2A, 4.5V | 900mV @ 250µA | 10.4nC @ 4.5V | ±8V | 845pF @ 15V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET P-CH 20V 4.2A TSOT-26 |
3.654 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 1.8V, 4.5V | 65mOhm @ 4.2A, 4.5V | 900mV @ 250µA | 10.4nC @ 4.5V | ±8V | 845pF @ 15V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET N-CH 30V 7.5A PWRDI3333-8 |
3.418 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.5A (Ta) | 4.5V, 10V | 23mOhm @ 10A, 10V | 2.4V @ 250µA | 10.5nC @ 10V | ±25V | 479pF @ 15V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 30V 7.5A PWRDI3333-8 |
8.478 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.5A (Ta) | 4.5V, 10V | 23mOhm @ 10A, 10V | 2.4V @ 250µA | 10.5nC @ 10V | ±25V | 479pF @ 15V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFETN-CHAN 20V X1-DFN1212-3 |
8.802 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 900mA (Ta) | 1.5V, 4.5V | 600mOhm @ 200mA, 4.5V | 1V @ 250µA | 0.7nC @ 4.5V | ±12V | 52pF @ 16V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1212-3 | 3-UDFN |
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Vishay Siliconix |
MOSFET P-CH 20V 10.2A 1212-8 |
214.896 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 10.2A (Ta) | 1.8V, 4.5V | 10.6mOhm @ 15A, 4.5V | 1V @ 250µA | 90nC @ 4.5V | ±8V | 3729pF @ 10V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Nexperia |
MOSFET N-CH 55V 20.3A D2PAK |
35.634 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 20.3A (Tc) | 10V | 75mOhm @ 10A, 10V | 4V @ 1mA | 11nC @ 10V | ±20V | 483pF @ 25V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |