Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 195/999
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Nexperia |
MOSFET N-CH 30V SOT883 |
7.218 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 590mA (Ta) | 1.5V, 4.5V | 670mOhm @ 590mA, 4.5V | 950mV @ 250µA | 1.1nC @ 4.5V | ±8V | 30.3pF @ 15V | - | 310mW (Ta), 1.67W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006B-3 | 3-XFDFN |
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Diodes Incorporated |
MOSFET P-CH 30V 400MA 3DFN1006 |
4.392 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 400mA (Ta) | 2.5V, 10V | 2.4Ohm @ 200mA, 10V | 2.3V @ 250µA | 1.3nC @ 10V | ±20V | 51pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-DFN1006 (1.0x0.6) | 3-UFDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 0.1A CST3 |
8.712 |
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π-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | - | - | ±20V | 9.1pF @ 3V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 |
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Texas Instruments |
MOSFET N-CH 12V 7.1A PICOSTAR |
26.514 |
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FemtoFET™ | N-Channel | MOSFET (Metal Oxide) | 12V | 7.1A (Ta) | 1.8V, 4.5V | 19mOhm @ 900mA, 4.5V | 1.2V @ 250µA | 5nC @ 4.5V | 8V | 674pF @ 6V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
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Rohm Semiconductor |
MOSFET N-CH 30V 13A HSMT8 |
5.040 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 6mOhm @ 13A, 10V | 2.5V @ 1mA | 36nC @ 10V | ±20V | 1900pF @ 15V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET P-CH 12V 3A CPH3 |
6.534 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 3A (Ta) | 1.8V, 4.5V | 70mOhm @ 1.5A, 4.5V | 1.4V @ 1mA | 5.6nC @ 4.5V | ±10V | 405pF @ 6V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CHANNEL 30V 3A TO236AB |
7.794 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 3A (Ta) | 4.5V, 10V | 72mOhm @ 3A, 10V | 2.5V @ 250µA | 5.5nC @ 10V | ±20V | 160pF @ 15V | - | 460mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 9A 8-DFN |
6.372 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta), 25A (Tc) | 4.5V, 10V | 17mOhm @ 9A, 10V | 2.4V @ 250µA | 18nC @ 10V | ±20V | 888pF @ 15V | - | 3.1W (Ta), 15.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerVDFN |
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Microchip Technology |
MOSFET N-CH 25V 8PDFN |
6.138 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 43A (Tc) | 3.3V, 10V | 13.5mOhm @ 10A, 10V | 1.7V @ 250µA | 8nC @ 4.5V | +10V, -8V | 400pF @ 12.5V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (3x3) | 8-PowerTDFN |
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Nexperia |
MOSFET P-CH 20V 5A 6DFN |
6.390 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 5A (Ta) | 1.8V, 4.5V | 32.5mOhm @ 5A, 4.5V | 900mV @ 250µA | 45nC @ 4.5V | ±12V | 2970pF @ 10V | - | 1.7W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
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Rohm Semiconductor |
MOSFET P-CH 45V 1A TUMT3 |
8.208 |
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- | P-Channel | MOSFET (Metal Oxide) | 45V | 1A (Ta) | 4V, 10V | 460mOhm @ 1A, 10V | 2.5V @ 1mA | 2.3nC @ 5V | ±20V | 160pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | TUMT3 | 3-SMD, Flat Leads |
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Micro Commercial Co |
MOSFET N-CH 60V 115MA SOT523 |
6.570 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 115mA | 5V, 10V | 13.5Ohm @ 500mA, 10V | 2V @ 250µA | - | ±20V | 50pF @ 25V | - | 150mW | -55°C ~ 150°C | Surface Mount | SOT-523 | SOT-523 |
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Diodes Incorporated |
MOSFET N-CH 20V 6.2A TSOT-26 |
6.750 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 6.2A (Ta) | 2.5V, 4.5V | 24mOhm @ 6.2A, 4.5V | 1.5V @ 250µA | 8.3nC @ 4.5V | ±8V | 856pF @ 10V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
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Nexperia |
MOSFET N-CH 60V 450MA 3DFN |
6.066 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 450mA (Ta) | 10V | 1.6Ohm @ 450mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | ±20V | 50pF @ 10V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006B-3 | 3-XFDFN |
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Central Semiconductor Corp |
MOSFET P-CH 30V 0.45A SOT883 |
7.326 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 450mA (Ta) | 1.8V, 4.5V | 1.1Ohm @ 430mA, 4.5V | 1V @ 250µA | 0.88nC @ 4.5V | 8V | 55pF @ 25V | - | 100mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-883VL | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2A CST3B |
7.200 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.5V, 4.5V | 103mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | ±8V | 290pF @ 10V | - | - | 150°C (TJ) | Surface Mount | CST3B | 3-SMD, No Lead |
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Nexperia |
MOSFET P-CH 20V 7.9A 8-SOIC |
7.812 |
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TrenchMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 7.9A (Tc) | 4.5V | 50mOhm @ 2.8A, 4.5V | 950mV @ 250µA | 10nC @ 4.5V | ±12V | 1020pF @ 20V | - | 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 60V 0.115A SOT323 |
6.048 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 115mA (Ta) | 5V, 10V | 6Ohm @ 115mA, 5V | 2V @ 250µA | - | ±20V | 23pF @ 25V | - | 200mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET N-CH 30V 3.6A SOT23 |
3.526 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 3.6A (Ta) | 4.5V, 10V | 50mOhm @ 3.6A, 10V | 2V @ 250µA | 11.2nC @ 10V | ±20V | 495pF @ 15V | - | 770mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 20V 7.9A 6-TSOP |
7.218 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 7.9A (Tc) | 1.8V, 4.5V | 28mOhm @ 5.1A, 4.5V | 1V @ 250µA | 18nC @ 8V | ±8V | 666pF @ 10V | - | 1.7W (Ta), 2.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET N-CH 20V 8A 6TSOP |
4.608 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 8A (Tc) | 2.5V, 10V | 27mOhm @ 6.5A, 10V | 1.5V @ 250µA | 14nC @ 10V | ±12V | 335pF @ 10V | - | 1.7W (Ta), 2.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Microchip Technology |
MOSFET N-CH 25V 8PDFN |
8.784 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 43A (Tc) | 3.3V, 10V | 13.5mOhm @ 10A, 10V | 1.7V @ 250µA | 8nC @ 4.5V | +10V, -8V | 400pF @ 12.5V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 12A SC-70-6L |
5.868 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 18mOhm @ 9A, 10V | 2.4V @ 250µA | 17nC @ 10V | ±20V | 570pF @ 15V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Rohm Semiconductor |
MOSFET P-CH 30V 200MA VMT3 |
3.852 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 200mA (Ta) | 4V, 10V | 1.4Ohm @ 200mA, 10V | 2.5V @ 1mA | - | ±20V | 30pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VMT3 | SOT-723 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 5A SOT223 |
7.884 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4.5V, 10V | 60mOhm @ 5A, 10V | 3V @ 250µA | 7nC @ 5V | ±20V | 555pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET P-CH 20V 6.2A 6DFN |
3.562 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 6.2A (Ta) | 1.8V, 4.5V | 36mOhm @ 4.6A, 4.5V | 1.1V @ 250µA | 14.4nC @ 4.5V | ±12V | 1537pF @ 10V | - | 660mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-UDFN Exposed Pad |
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ON Semiconductor |
MOSFET N-CH 30V 160A SO8FL |
980.508 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 106A (Tc) | 4.5V, 10V | 2.1mOhm @ 30A, 10V | 2.3V @ 1mA | 47.9nC @ 10V | ±20V | 3250pF @ 15V | - | 1.7W (Ta), 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Micro Commercial Co |
P-CHANNEL MOSFET, SOT-883 PACKAG |
3.618 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 680mA | 4.5V | 700mOhm @ 600mA, 4.5V | 1.1V @ 250µA | - | ±12V | 170pF @ 6V | - | 100mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-883 | SC-101, SOT-883 |
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Diodes Incorporated |
MOSFET N-CH 30V U-DFN2020-6 |
6.210 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 12mOhm @ 11A, 10V | 2V @ 250µA | 25.1nC @ 10V | ±20V | 1415pF @ 15V | - | 730mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-UDFN Exposed Pad |
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Micro Commercial Co |
N-CHANNEL MOSFET, SOT-883 PACKAG |
5.454 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | SOT-883 | SC-101, SOT-883 |