Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 193/999
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Nexperia |
MOSFET P-CH 30V SOT883 |
4.770 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 410mA (Ta) | 1.5V, 4.5V | 1.4Ohm @ 410mA, 4.5V | 950mV @ 250µA | 1.2nC @ 4.5V | ±8V | 43.2pF @ 15V | - | 310mW (Ta), 1.67W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006-3 | SC-101, SOT-883 |
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Diodes Incorporated |
MOSFET P-CH 50V 200MA 3DFN |
7.830 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 2.5V, 4V | 6Ohm @ 100mA, 4V | 1.2V @ 250µA | 0.58nC @ 4V | ±8V | 50.54pF @ 25V | - | 425mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-DFN1006 (1.0x0.6) | 3-UFDFN |
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Taiwan Semiconductor Corporation |
MOSFET P-CH 40V 51A 8PDFN |
64.512 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 40V | 51A (Tc) | 4.5V, 10V | 16mOhm @ 10A, 10V | 2.5V @ 250µA | 48nC @ 10V | ±20V | 2712pF @ 20V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 20V 660MA SOT-723 |
7.344 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 660mA (Ta) | 1.5V, 4.5V | 480mOhm @ 780mA, 4.5V | 1.2V @ 250µA | - | ±6V | 170pF @ 16V | - | 310mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-723 | SOT-723 |
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Diodes Incorporated |
MOSFET N-CH 30V 0.115A |
4.104 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 115mA (Ta) | 2.5V, 4V | 5Ohm @ 10mA, 4V | 1.5V @ 100µA | 0.55nC @ 10V | ±20V | 48pF @ 5V | - | 240mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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Rohm Semiconductor |
MOSFET N-CH 30V 13A 8PSOP |
24.606 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 12.6mOhm @ 13A, 10V | 2.5V @ 1mA | 12nC @ 10V | ±20V | 650pF @ 15V | - | 3W (Ta) | 150°C (TJ) | Surface Mount | 8-PSOP | 8-SMD, Flat Lead |
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Rohm Semiconductor |
MOSFET N-CH 50V 0.2A UMT3 |
6.318 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 1.2V, 4.5V | 2.2Ohm @ 200mA, 4.5V | 1V @ 1mA | - | ±8V | 25pF @ 10V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | UMT3 | SC-70, SOT-323 |
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Rohm Semiconductor |
4V DRIVE NCH MOSFET (CORRESPONDS |
3.240 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 30V | 300mA (Ta) | 4V, 10V | 1.2Ohm @ 300mA, 10V | 2.5V @ 1mA | - | ±20V | 20pF @ 10V | - | 200mW | 150°C (TJ) | Surface Mount | UMT3 | SC-70, SOT-323 |
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ON Semiconductor |
MOSFET N-CH 25V 9.2A DPAK |
3.780 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 9.2A (Ta), 49A (Tc) | 4.5V, 10V | 9.3mOhm @ 30A, 10V | 2.5V @ 250µA | 13.5nC @ 4.5V | ±20V | 990pF @ 12V | - | 1.27W (Ta), 36.6W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET N-CH 12V 3PICOSTAR |
5.886 |
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FemtoFET™ | N-Channel | MOSFET (Metal Oxide) | 12V | 2.9A (Ta) | 2.5V, 4.5V | 44mOhm @ 500mA, 4.5V | 1.25V @ 250µA | 2.6nC @ 4.5V | ±10V | 291pF @ 6V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
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Rohm Semiconductor |
MOSFET N-CH 30V 28A 8-HSOP |
23.682 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta) | 4.5V, 10V | 2.6mOhm @ 28A, 10V | 2.5V @ 1mA | 36nC @ 10V | ±20V | 2300pF @ 15V | - | 3W (Ta), 31W (Tc) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Infineon Technologies |
DIFFERENTIATED MOSFETS |
45.786 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 13A (Ta), 48A (Tc) | 6V, 10V | 9.7mOhm @ 40A, 10V | 3.3V @ 14µA | 15nC @ 10V | ±20V | 1075pF @ 30V | - | 3W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Nexperia |
MOSFET P-CH 20V 500MA 3DFN1006B |
8.334 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 500mA (Ta) | 1.2V, 4.5V | 1.4Ohm @ 500mA, 4.5V | 950mV @ 250µA | 2.1nC @ 4.5V | ±8V | 43pF @ 10V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006B-3 | 3-XFDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 400MA S-MINI |
2.142 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 4V, 10V | 1.9Ohm @ 100mA, 4.5V | 2V @ 1mA | 3nC @ 10V | +20V, -16V | 82pF @ 10V | - | 1.2W (Ta) | 150°C | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 20V 1.2A SC59-3 |
6.804 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 1.2A (Ta) | 1.5V, 4.5V | 100mOhm @ 500mA, 4.5V | 1.2V @ 1mA | - | ±8V | 220pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-59-3 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 30V 5.7A 6TSOP |
4.806 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 5.7A (Ta) | 4.5V, 10V | 38mOhm @ 4.5A, 10V | 2V @ 250µA | 11nC @ 10V | ±20V | 294pF @ 15V | - | 530mW (Ta), 4.46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
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Diodes Incorporated |
MOSFET N-CH 30V 11.2A 8SOIC |
22.350 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 11.2A (Ta) | 4.5V, 10V | 14mOhm @ 11.2A, 10V | 2.2V @ 250µA | 45.7nC @ 10V | ±12V | 2296pF @ 15V | Schottky Diode (Body) | 1.55W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
MOSFET P-CH 20V 4.1A 6TSOP |
2.124 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 4.1A (Ta) | 2.5V, 4.5V | 55mOhm @ 2.4A, 4.5V | 1.25V @ 250µA | 13nC @ 4.5V | ±12V | 1000pF @ 10V | - | 530mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
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Rohm Semiconductor |
MOSFET P-CH 12V 2.5A TUMT6 |
2.484 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 2.5A (Ta) | 1.5V, 4.5V | 62mOhm @ 2.5A, 4.5V | 1V @ 1mA | 16nC @ 4.5V | -8V | 2000pF @ 6V | - | 320mW (Ta) | 150°C (TJ) | Surface Mount | TUMT6 | 6-SMD, Flat Leads |
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Micro Commercial Co |
N-CHANNEL MOSFET, SOT-323 PACKAG |
5.220 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V | 8Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13pF @ 5V | - | 200mW (Ta) | -55°C ~ 150°C | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Rohm Semiconductor |
NCH 60V 1.5A POWER MOSFET |
5.436 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 1.5A (Ta) | 4V, 10V | 290mOhm @ 1.5A, 10V | 2.5V @ 1mA | 2nC @ 5V | ±20V | 110pF @ 10V | - | 800mW (Ta) | 150°C | Surface Mount | TUMT3 | 3-SMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 30V 30A U8FL |
12.252 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 10.5mOhm @ 15A, 10V | 2.5V @ 250µA | 12nC @ 10V | ±20V | 750pF @ 12V | - | 3.1W (Ta), 21W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET P-CH 20V 12A SC70-6 |
50.430 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 12A (Tc) | 2.5V, 4.5V | 35mOhm @ 5.6A, 4.5V | 1.5V @ 250µA | 47nC @ 10V | ±12V | 1250pF @ 10V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Diodes Incorporated |
MOSFET N-CH 20V 0.6A X2DFN-3 |
3.600 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 600mA (Ta) | 1.5V, 4.5V | 450mOhm @ 200mA, 4.5V | 1V @ 250µA | 0.88nC @ 4.5V | ±8V | 52.5pF @ 16V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN0806-3 | 3-XFDFN |
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Nexperia |
MOSFET P-CH 20V 1A |
2.826 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 1A (Ta) | 1.8V, 4.5V | 450mOhm @ 300mA, 4.5V | 950mV @ 250µA | 1.9nC @ 4.5V | ±8V | 127pF @ 10V | - | 360mW (Ta), 3.125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006-3 | SC-101, SOT-883 |
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Nexperia |
MOSFET N-CH 20V 1A |
3.114 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 1A (Ta) | 1.8V, 4.5V | 380mOhm @ 500mA, 4.5V | 950mV @ 250µA | 0.68nC @ 4.5V | ±8V | 83pF @ 10V | - | 360mW (Ta), 2.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006-3 | SC-101, SOT-883 |
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Diodes Incorporated |
MOSFET N-CH 20V 0.76A 3DFN |
2.430 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 760mA (Ta) | 1.5V, 4.5V | 990mOhm @ 100mA, 4.5V | 1V @ 250µA | 0.93nC @ 10V | ±12V | 27.6pF @ 16V | - | 380mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-DFN1006 (1.0x0.6) | 3-UFDFN |
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Diodes Incorporated |
MOSFET P-CH 30V 0.3A DFN0806-3 |
6.336 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 300mA (Ta) | 1.8V, 4.5V | 1.5Ohm @ 200mA, 4.5V | 1.2V @ 250µA | 0.7nC @ 4.5V | ±8V | 40.9pF @ 15V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN0806-3 | 3-XFDFN |
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Diodes Incorporated |
MOSFET P-CH 20V 0.33A X2DFN-3 |
2.628 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 330mA (Ta) | 1.5V, 4.5V | 1Ohm @ 200mA, 4.5V | 1V @ 250µA | 0.8nC @ 4.5V | ±8V | 49pF @ 15V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN0806-3 | 3-XFDFN |
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Rohm Semiconductor |
MOSFET N-CH 20V 1A VML1006 |
6.282 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 1A (Ta) | 1.2V, 4.5V | 470mOhm @ 500mA, 4.5V | 1V @ 1mA | - | ±8V | 40pF @ 10V | - | 400mW (Ta) | 150°C (TJ) | Surface Mount | DFN1006-3 (VML1006) | SC-101, SOT-883 |