Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 131/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor |
DIODE GEN PURP 400V 12A DO4 |
92 |
|
- | Standard | 400V | 12A | 1.4V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 50V 12A DO4 |
15.732 |
|
- | Standard, Reverse Polarity | 50V | 12A | 1.4V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 12A DO4 |
19.560 |
|
- | Standard, Reverse Polarity | 400V | 12A | 1.4V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 600V 1A D5A |
9.720 |
|
- | Standard | 600V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 600V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 40A DO203AB |
8.982 |
|
- | Standard | 1000V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 1000V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |
|
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|
Microsemi |
DIODE GEN PURP 50V 3A AXIAL |
8.226 |
|
- | Standard | 50V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 1.2KV 20A TO220AC |
7.169 |
|
- | Silicon Carbide Schottky | 1200V | 20A | 1.5V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 1200V | 1650pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 1.2KV 20A TO220AC |
2.068 |
|
Automotive, AEC-Q101, ECOPACK®2 | Silicon Carbide Schottky | 1200V | 20A | 1.5V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 1200V | 1650pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 1200V 10A TO220-2 |
19.044 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.6V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 550pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 40A TO247AC |
10.596 |
|
- | Standard | 600V | 40A | 1.25V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
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|
GeneSiC Semiconductor |
DIODE GEN PURP REV 150V 60A DO5 |
6.348 |
|
- | Standard, Reverse Polarity | 150V | 60A | 1.1V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 200°C |
|
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GeneSiC Semiconductor |
DIODE GEN PURP REV 600V 60A DO5 |
6.180 |
|
- | Standard, Reverse Polarity | 600V | 60A | 1.1V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 200°C |
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Microsemi |
DIODE GEN PURP 1KV 3A B-MELF |
9.792 |
|
- | Standard | 1000V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 1KV 35A DO5 |
8.550 |
|
- | Standard, Reverse Polarity | 1000V | 35A | 1.2V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 600V 12A TO220AC |
20.496 |
|
- | Silicon Carbide Schottky | 600V | 12A | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 240µA @ 600V | 516pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 20A DO5 |
6.432 |
|
- | Standard, Reverse Polarity | 400V | 20A | 1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 1200V 10A TO247 |
473 |
|
- | Silicon Carbide Schottky | 1200V | 10A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-247-3 | TO-247 | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 30A TO247AC |
10 |
|
Automotive, AEC-Q101 | Standard | 1200V | 30A | 4.1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 170ns | 40µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 60A TO247AC |
18.660 |
|
- | Standard | 1200V | 60A | 1.4V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 1200V 15A TO220-2 |
22.404 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 1200V | 15A (DC) | 1.6V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 1200V | 790pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 1.6KV 85A DO5 |
6.840 |
|
- | Standard, Reverse Polarity | 1600V | 85A | 1.1V @ 85A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 85A DO203AB |
6.612 |
|
- | Standard | 600V | 85A | 1.75V @ 266.9A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 100µA @ 600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 1KV 40A DO5 |
6.924 |
|
- | Standard, Reverse Polarity | 1000V | 40A | 1V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 600V 20A TO220AC |
12.918 |
|
- | Silicon Carbide Schottky | 600V | 20A | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 600V | 860pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Microsemi |
DIODE GEN PURP 660V 1.75A A-MELF |
6.492 |
|
- | Standard | 660V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 660V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 400V 85A DO5 |
7.860 |
|
- | Standard | 400V | 85A | 1.4V @ 85A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 300V 4A |
7.440 |
|
- | Silicon Carbide Schottky | 300V | 4A (DC) | 1.6V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 300V | 76pF @ 1V, 1MHz | Through Hole | TO-206AB, TO-46-3 Metal Can | TO-46 | -55°C ~ 225°C |
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ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35 |
252.972 |
|
- | Standard | 100V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 200V 200MA SOT23 |
180.084 |
|
- | Standard | 200V | 200mA (DC) | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 150V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 250V 200MA SOD323 |
239.178 |
|
- | Standard | 250V | 200mA (DC) | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 200V | 5pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C |