EPC Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerEPC
Datensätze 54
Seite 2/2
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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EPC |
GANFET TRANS 65V 2.7A BUMPED DIE |
521.712 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 65V | 2A (Ta) | 5V | 530mOhm @ 500mA, 5V | 2.5V @ 250µA | - | +6V, -4V | 21pF @ 32.5V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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|
EPC |
GANFET N-CH 80V 90A DIE |
48.888 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 80V | 90A (Ta) | 5V | 2.2mOhm @ 29A, 5V | 2.5V @ 13mA | 19nC @ 5V | +6V, -4V | 1940pF @ 40V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GANFET N-CH 80V 1.7A 6SOLDER BAR |
56.460 |
|
Automotive, AEC-Q101, eGaN® | N-Channel | GaNFET (Gallium Nitride) | 80V | 1.7A | 5V | 80mOhm @ 1A, 5V | 2.5V @ 600µA | 0.83nC @ 5V | +5.75V, -4V | 88pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GAN TRANS 100V 2.7A BUMPED DIE |
1.642 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 2.7A (Ta) | 5V | 160mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.48nC @ 5V | +6V, -4V | 55pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GANFET TRANS 100V DIE CU PILLAR |
42.354 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 1.7A | 5V | 25mOhm @ 3A, 5V | 2.5V @ 1.5mA | 2.1nC @ 5V | +6V, -4V | 258pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
TRANS GAN 100V DIE 16MOHM |
54.072 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
EPC |
AEC-Q101 GAN FET 80V 20 MOHM |
56.268 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | Die | Die |
|
|
EPC |
TRANS GAN 200V 8MOHM DIE |
27.228 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 200V | 48A (Ta) | 5V | 8mOhm @ 20A, 5V | 2.5V @ 7mA | 11nC @ 5V | +6V, -4V | 1140pF @ 100V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
TRANS GAN 100V DIE 4MOHM |
18.876 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 48A | 5V | 3.8mOhm @ 25A, 5V | 2.5V @ 9mA | 14.8nC @ 5V | +6V, -4V | 1895pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GANFET TRANS 40V 2.7A BUMPED DIE |
4.572 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 2.7A (Ta) | 5V | 110mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.45nC @ 5V | +6V, -4V | 52pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GANFET TRANS 65V 2.7A BUMPED DIE |
3.960 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 65V | 2.7A (Ta) | 5V | 130mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.45nC @ 5V | +6V, -4V | 52pF @ 32.5V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
TRANS GAN 80V 60A BUMPED DIE |
8.640 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 80V | 60A (Ta) | 5V | 2.5mOhm @ 29A, 5V | 2.5V @ 14mA | 15nC @ 5V | +6V, -4V | 1700pF @ 40V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GANFET TRANS 200V 48A BUMPED DIE |
4.770 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 200V | 48A (Ta) | 5V | 10mOhm @ 20A, 5V | 2.5V @ 7mA | 8.8nC @ 5V | +6V, -4V | 950pF @ 100V | - | - | -40°C ~ 140°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GANFET TRANS 100V DIE CU PILLAR |
6.138 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 1.7A | 5V | 25mOhm @ 3A, 5V | 2.5V @ 1.5mA | 2.3nC @ 5V | +6V, -4V | 280pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GANFET TRANS 100V BUMPED DIE |
4.392 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 16A (Ta) | 5V | 7mOhm @ 16A, 5V | 2.5V @ 5mA | 6.5nC @ 5V | +6V, -4V | 685pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GANFET TRANS 100V 25A BUMPED DIE |
3.418 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 25A (Ta) | 5V | 7mOhm @ 25A, 5V | 2.5V @ 5mA | 10nC @ 5V | +6V, -5V | 950pF @ 50V | - | - | -40°C ~ 125°C (TJ) | Surface Mount | Die Outline (11-Solder Bar) | Die |
|
|
EPC |
GANFET TRANS 100V 6A BUMPED DIE |
4.464 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 6A (Ta) | 5V | 30mOhm @ 6A, 5V | 2.5V @ 1.2mA | 2.8nC @ 5V | +6V, -5V | 205pF @ 50V | - | - | -40°C ~ 125°C (TJ) | Surface Mount | Die Outline (5-Solder Bar) | Die |
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|
EPC |
GANFET TRANS 200V 12A BUMPED DIE |
3.526 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 200V | 12A (Ta) | 5V | 25mOhm @ 6A, 5V | 2.5V @ 3mA | 7.5nC @ 5V | +6V, -4V | 540pF @ 100V | - | - | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GANFET TRANS 200V 3A BUMPED DIE |
7.056 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 200V | 3A (Ta) | 5V | 100mOhm @ 3A, 5V | 2.5V @ 1mA | 1.8nC @ 5V | +6V, -5V | 145pF @ 100V | - | - | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GANFET TRANS 40V 10A BUMPED DIE |
4.482 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 10A (Ta) | 5V | 16mOhm @ 5A, 5V | 2.5V @ 2mA | 2.8nC @ 5V | +6V, -5V | 325pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (5-Solder Bar) | Die |
|
|
EPC |
GANFET TRANS 40V 33A BUMPED DIE |
5.058 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 33A (Ta) | 5V | 4mOhm @ 33A, 5V | 2.5V @ 9mA | 11.6nC @ 5V | +6V, -5V | 1200pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (11-Solder Bar) | Die |
|
|
EPC |
GANFET TRANS 100V 11A BUMPED DIE |
8.586 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 11A (Ta) | 5V | 16mOhm @ 11A, 5V | 2.5V @ 3mA | 5.2nC @ 5V | +6V, -5V | 520pF @ 50V | - | - | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GANFET TRANS 150V 12A BUMPED DIE |
8.388 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 150V | 12A (Ta) | 5V | 25mOhm @ 6A, 5V | 2.5V @ 3mA | 7.5nC @ 5V | +6V, -5V | 540pF @ 100V | - | - | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die |
|
|
EPC |
GAN TRANS 300V 150MO BUMPED DIE |
7.128 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 300V | 4A (Ta) | 5V | 150mOhm @ 3A, 5V | 2.5V @ 1mA | - | +6V, -4V | 194pF @ 240V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |