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Vishay Siliconix Transistoren - FETs, MOSFETs - Single

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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerVishay Siliconix
Datensätze 3.936
Seite 83/132
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
FET-Typ
Technologie
Drain to Source Voltage (Vdss)
Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.
Antriebsspannung (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs (th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Eingangskapazität (Ciss) (Max) @ Vds
FET-Funktion
Verlustleistung (max.)
Betriebstemperatur
Montagetyp
Lieferantengerätepaket
Paket / Fall
IRF9530STRL
Vishay Siliconix
MOSFET P-CH 100V 12A D2PAK
5.652
-
P-Channel
MOSFET (Metal Oxide)
100V
12A (Tc)
10V
300mOhm @ 7.2A, 10V
4V @ 250µA
38nC @ 10V
±20V
860pF @ 25V
-
3.7W (Ta), 88W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9540S
Vishay Siliconix
MOSFET P-CH 100V 19A D2PAK
4.410
-
P-Channel
MOSFET (Metal Oxide)
100V
19A (Tc)
10V
200mOhm @ 11A, 10V
4V @ 250µA
61nC @ 10V
±20V
1400pF @ 25V
-
3.7W (Ta), 150W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9540STRL
Vishay Siliconix
MOSFET P-CH 100V 19A D2PAK
5.760
-
P-Channel
MOSFET (Metal Oxide)
100V
19A (Tc)
10V
200mOhm @ 11A, 10V
4V @ 250µA
61nC @ 10V
±20V
1400pF @ 25V
-
3.7W (Ta), 150W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9610S
Vishay Siliconix
MOSFET P-CH 200V 1.8A D2PAK
8.514
-
P-Channel
MOSFET (Metal Oxide)
200V
1.8A (Tc)
10V
3Ohm @ 900mA, 10V
4V @ 250µA
11nC @ 10V
±20V
170pF @ 25V
-
3W (Ta), 20W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9620S
Vishay Siliconix
MOSFET P-CH 200V 3.5A D2PAK
4.626
-
P-Channel
MOSFET (Metal Oxide)
200V
3.5A (Tc)
10V
1.5Ohm @ 1.5A, 10V
4V @ 250µA
22nC @ 10V
±20V
350pF @ 25V
-
3W (Ta), 40W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9630S
Vishay Siliconix
MOSFET P-CH 200V 6.5A D2PAK
5.274
-
P-Channel
MOSFET (Metal Oxide)
200V
6.5A (Tc)
10V
800mOhm @ 3.9A, 10V
4V @ 250µA
29nC @ 10V
±20V
700pF @ 25V
-
3W (Ta), 74W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9640S
Vishay Siliconix
MOSFET P-CH 200V 11A D2PAK
3.418
-
P-Channel
MOSFET (Metal Oxide)
200V
11A (Tc)
10V
500mOhm @ 6.6A, 10V
4V @ 250µA
44nC @ 10V
±20V
1200pF @ 25V
-
3W (Ta), 125W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9640STRL
Vishay Siliconix
MOSFET P-CH 200V 11A D2PAK
3.492
-
P-Channel
MOSFET (Metal Oxide)
200V
11A (Tc)
10V
500mOhm @ 6.6A, 10V
4V @ 250µA
44nC @ 10V
±20V
1200pF @ 25V
-
3W (Ta), 125W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9Z14S
Vishay Siliconix
MOSFET P-CH 60V 6.7A D2PAK
6.300
-
P-Channel
MOSFET (Metal Oxide)
60V
6.7A (Tc)
10V
500mOhm @ 4A, 10V
4V @ 250µA
12nC @ 10V
±20V
270pF @ 25V
-
3.7W (Ta), 43W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9Z24
Vishay Siliconix
MOSFET P-CH 60V 11A TO-220AB
7.452
-
P-Channel
MOSFET (Metal Oxide)
60V
11A (Tc)
10V
280mOhm @ 6.6A, 10V
4V @ 250µA
19nC @ 10V
±20V
570pF @ 25V
-
60W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRF9Z24S
Vishay Siliconix
MOSFET P-CH 60V 11A D2PAK
6.516
-
P-Channel
MOSFET (Metal Oxide)
60V
11A (Tc)
10V
280mOhm @ 6.6A, 10V
4V @ 250µA
19nC @ 10V
±20V
570pF @ 25V
-
3.7W (Ta), 60W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9Z24STRR
Vishay Siliconix
MOSFET P-CH 60V 11A D2PAK
7.938
-
P-Channel
MOSFET (Metal Oxide)
60V
11A (Tc)
10V
280mOhm @ 6.6A, 10V
4V @ 250µA
19nC @ 10V
±20V
570pF @ 25V
-
3.7W (Ta), 60W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9Z30
Vishay Siliconix
MOSFET P-CH 50V 18A TO-220AB
7.380
-
P-Channel
MOSFET (Metal Oxide)
50V
18A (Tc)
10V
140mOhm @ 9.3A, 10V
4V @ 250µA
39nC @ 10V
±20V
900pF @ 25V
-
74W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRF9Z34S
Vishay Siliconix
MOSFET P-CH 60V 18A D2PAK
6.462
-
P-Channel
MOSFET (Metal Oxide)
60V
18A (Tc)
10V
140mOhm @ 11A, 10V
4V @ 250µA
34nC @ 10V
±20V
1100pF @ 25V
-
3.7W (Ta), 88W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9Z34STRL
Vishay Siliconix
MOSFET P-CH 60V 18A D2PAK
8.172
-
P-Channel
MOSFET (Metal Oxide)
60V
18A (Tc)
10V
140mOhm @ 11A, 10V
4V @ 250µA
34nC @ 10V
±20V
1100pF @ 25V
-
3.7W (Ta), 88W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFB11N50A
Vishay Siliconix
MOSFET N-CH 500V 11A TO-220AB
2.340
-
N-Channel
MOSFET (Metal Oxide)
500V
11A (Tc)
10V
520mOhm @ 6.6A, 10V
4V @ 250µA
52nC @ 10V
±30V
1423pF @ 25V
-
170W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRFB9N60A
Vishay Siliconix
MOSFET N-CH 600V 9.2A TO-220AB
6.390
-
N-Channel
MOSFET (Metal Oxide)
600V
9.2A (Tc)
10V
750mOhm @ 5.5A, 10V
4V @ 250µA
49nC @ 10V
±30V
1400pF @ 25V
-
170W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRFB9N65A
Vishay Siliconix
MOSFET N-CH 650V 8.5A TO-220AB
3.798
-
N-Channel
MOSFET (Metal Oxide)
650V
8.5A (Tc)
10V
930mOhm @ 5.1A, 10V
4V @ 250µA
48nC @ 10V
±30V
1417pF @ 25V
-
167W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRFBC30A
Vishay Siliconix
MOSFET N-CH 600V 3.6A TO-220AB
6.282
-
N-Channel
MOSFET (Metal Oxide)
600V
3.6A (Tc)
10V
2.2Ohm @ 2.2A, 10V
4.5V @ 250µA
23nC @ 10V
±30V
510pF @ 25V
-
74W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRFBC30AS
Vishay Siliconix
MOSFET N-CH 600V 3.6A D2PAK
2.700
-
N-Channel
MOSFET (Metal Oxide)
600V
3.6A (Tc)
10V
2.2Ohm @ 2.2A, 10V
4.5V @ 250µA
23nC @ 10V
±30V
510pF @ 25V
-
74W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFBC30S
Vishay Siliconix
MOSFET N-CH 600V 3.6A D2PAK
5.688
-
N-Channel
MOSFET (Metal Oxide)
600V
3.6A (Tc)
10V
2.2Ohm @ 2.2A, 10V
4V @ 250µA
31nC @ 10V
±20V
660pF @ 25V
-
3.1W (Ta), 74W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFBC40
Vishay Siliconix
MOSFET N-CH 600V 6.2A TO-220AB
5.346
-
N-Channel
MOSFET (Metal Oxide)
600V
6.2A (Tc)
10V
1.2Ohm @ 3.7A, 10V
4V @ 250µA
60nC @ 10V
±20V
1300pF @ 25V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRFBC40A
Vishay Siliconix
MOSFET N-CH 600V 6.2A TO-220AB
7.758
-
N-Channel
MOSFET (Metal Oxide)
600V
6.2A (Tc)
10V
1.2Ohm @ 3.7A, 10V
4V @ 250µA
42nC @ 10V
±30V
1036pF @ 25V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRFBC40AS
Vishay Siliconix
MOSFET N-CH 600V 6.2A D2PAK
4.050
-
N-Channel
MOSFET (Metal Oxide)
600V
6.2A (Tc)
10V
1.2Ohm @ 3.7A, 10V
4V @ 250µA
42nC @ 10V
±30V
1036pF @ 25V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFBC40S
Vishay Siliconix
MOSFET N-CH 600V 6.2A D2PAK
5.868
-
N-Channel
MOSFET (Metal Oxide)
600V
6.2A (Tc)
10V
1.2Ohm @ 3.7A, 10V
4V @ 250µA
60nC @ 10V
±20V
1300pF @ 25V
-
3.1W (Ta), 130W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFBF20S
Vishay Siliconix
MOSFET N-CH 900V 1.7A D2PAK
6.084
-
N-Channel
MOSFET (Metal Oxide)
900V
1.7A (Tc)
10V
8Ohm @ 1A, 10V
4V @ 250µA
38nC @ 10V
±20V
490pF @ 25V
-
3.1W (Ta), 54W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFD010
Vishay Siliconix
MOSFET N-CH 50V 1.7A 4-DIP
2.664
-
N-Channel
MOSFET (Metal Oxide)
50V
1.7A (Tc)
10V
200mOhm @ 860mA, 10V
4V @ 250µA
13nC @ 10V
±20V
250pF @ 25V
-
1W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
4-DIP, Hexdip, HVMDIP
4-DIP (0.300", 7.62mm)
IRFD014
Vishay Siliconix
MOSFET N-CH 60V 1.7A 4-DIP
5.112
-
N-Channel
MOSFET (Metal Oxide)
60V
1.7A (Ta)
10V
200mOhm @ 1A, 10V
4V @ 250µA
11nC @ 10V
±20V
310pF @ 25V
-
1.3W (Ta)
-55°C ~ 175°C (TJ)
Through Hole
4-DIP, Hexdip, HVMDIP
4-DIP (0.300", 7.62mm)
IRFD310
Vishay Siliconix
MOSFET N-CH 400V 350MA 4-DIP
7.830
-
N-Channel
MOSFET (Metal Oxide)
400V
350mA (Ta)
10V
3.6Ohm @ 210mA, 10V
4V @ 250µA
17nC @ 10V
±20V
170pF @ 25V
-
1W (Ta)
-55°C ~ 150°C (TJ)
Through Hole
4-DIP, Hexdip, HVMDIP
4-DIP (0.300", 7.62mm)
IRFD320
Vishay Siliconix
MOSFET N-CH 400V 490MA 4-DIP
4.680
-
N-Channel
MOSFET (Metal Oxide)
400V
490mA (Ta)
10V
1.8Ohm @ 210mA, 10V
4V @ 250µA
20nC @ 10V
±20V
410pF @ 25V
-
1W (Ta)
-55°C ~ 150°C (TJ)
Through Hole
4-DIP, Hexdip, HVMDIP
4-DIP (0.300", 7.62mm)