Vishay Siliconix Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerVishay Siliconix
Datensätze 3.936
Seite 82/132
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET P-CH 200V 1.9A DPAK |
5.724 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 1.9A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 4V @ 250µA | 8.9nC @ 10V | ±20V | 170pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 5.6A D2PAK |
8.532 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 10V | 540mOhm @ 3.4A, 10V | 4V @ 250µA | 8.3nC @ 10V | ±20V | 180pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 14A D2PAK |
2.232 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 160mOhm @ 8.4A, 10V | 4V @ 250µA | 26nC @ 10V | ±20V | 670pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 14A D2PAK |
7.290 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 160mOhm @ 8.4A, 10V | 4V @ 250µA | 26nC @ 10V | ±20V | 670pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 28A TO-220AB |
8.532 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 10V | 77mOhm @ 17A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | 1700pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 28A D2PAK |
6.426 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 10V | 77mOhm @ 17A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | 1700pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 28A D2PAK |
5.346 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 10V | 77mOhm @ 17A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | 1700pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 28A D2PAK |
3.798 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 10V | 77mOhm @ 17A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | 1700pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 3.3A D2PAK |
3.472 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 3.3A (Tc) | 10V | 1.5Ohm @ 2A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 3W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 2.7A TO-220AB |
4.608 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 2.7A (Tc) | 10V | 2Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 5.2A D2PAK |
2.880 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 5.2A (Tc) | 10V | 800mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 3W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 4.4A TO-220AB |
7.038 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 4.4A (Tc) | 10V | 1.1Ohm @ 2.6A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 200V 9A D2PAK |
6.156 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 400mOhm @ 5.4A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V | 800pF @ 25V | - | 3W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 18A D2PAK |
5.292 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 70nC @ 10V | ±20V | 1300pF @ 25V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 14A TO-220AB |
3.546 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 280mOhm @ 8.4A, 10V | 4V @ 250µA | 68nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 14A D2PAK |
5.634 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 280mOhm @ 8.4A, 10V | 4V @ 250µA | 68nC @ 10V | ±20V | 1300pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 400V 5.5A TO-220AB |
5.112 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 4.5V @ 250µA | 22nC @ 10V | ±30V | 600pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 5.5A D2PAK |
6.606 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 4.5V @ 250µA | 22nC @ 10V | ±30V | 600pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 400V 10A TO-220AB |
5.220 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 36nC @ 10V | ±30V | 1030pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 10A D2PAK |
4.320 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 36nC @ 10V | ±30V | 1030pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 400V 10A D2PAK |
3.744 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1400pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 450V 8.8A TO-220AB |
4.878 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 8.8A (Tc) | 10V | 630mOhm @ 5.3A, 10V | 4V @ 250µA | 80nC @ 10V | ±20V | 1400pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 5A D2PAK |
8.892 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.4Ohm @ 3A, 10V | 4.5V @ 250µA | 24nC @ 10V | ±30V | 620pF @ 25V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 8A TO-220AB |
2.178 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 38nC @ 10V | ±30V | 1018pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 8A D2PAK |
3.726 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 38nC @ 10V | ±30V | 1018pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 8A TO-262 |
7.416 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET P-CH 100V 4A D2PAK |
8.856 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 4A (Tc) | 10V | 1.2Ohm @ 2.4A, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | 200pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 100V 6.8A D2PAK |
2.100 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 10V | 600mOhm @ 4.1A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 100V 6.8A D2PAK |
8.766 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 10V | 600mOhm @ 4.1A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 100V 12A D2PAK |
5.688 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 12A (Tc) | 10V | 300mOhm @ 7.2A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 860pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |