Toshiba Semiconductor and Storage Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerToshiba Semiconductor and Storage
Datensätze 786
Seite 5/27
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 800V 17A TO220 |
8.088 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Ta) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 850µA | 32nC @ 10V | ±20V | 2050pF @ 300V | - | 180W (Tc) | 150°C | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO-247 |
6.180 |
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DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 125mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | ±30V | 2400pF @ 300V | - | 180W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 100A TO220 |
6.840 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Ta) | 10V | 3.2mOhm @ 50A, 10V | 4V @ 1mA | 130nC @ 10V | ±20V | 9000pF @ 40V | - | 255W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE NCH |
141.504 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | ±20V | 40pF @ 10V | - | 150mW (Ta) | 150°C | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS=30 |
65.454 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE NCH |
81.390 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.5V, 4.5V | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | - | ±10V | 12pF @ 10V | - | 500mW (Ta) | 150°C | Surface Mount | CST3C | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
X34 PB-F SMALL LOW ON RESISTANCE |
48.666 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 8.5pF @ 3V | - | 150mW (Ta) | 150°C | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS=20 |
46.494 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS=-2 |
50.580 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS:-2 |
201.270 |
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U-MOSVII | P-Channel | MOSFET (Metal Oxide) | 20V | 700mA (Ta) | 1.2V, 4.5V | 500mOhm @ 500mA, 4.5V | 1V @ 1mA | - | ±10V | 48pF @ 10V | - | 500mW (Ta) | 150°C | Surface Mount | CST3C | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS:-1 |
80.796 |
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U-MOSVII | P-Channel | MOSFET (Metal Oxide) | 12V | 1A (Ta) | 1.2V, 4.5V | 370mOhm @ 600mA, 4.5V | 1V @ 1mA | - | ±10V | 50pF @ 10V | - | 500mW (Ta) | 150°C | Surface Mount | CST3C | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS:-2 |
46.128 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.5V, 4.5V | 150mOhm @ 1A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | +6V, -8V | 270pF @ 10V | - | 600mW (Ta) | 150°C | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS:-2 |
27.726 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 3.9A (Ta) | 1.5V, 4.5V | 93mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | +6V, -8V | 290pF @ 10V | - | 1W (Ta) | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS:-3 |
29.610 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 4V, 10V | 71mOhm @ 3A, 10V | 2V @ 100µA | 5.9nC @ 10V | +10V, -20V | 280pF @ 15V | - | 1W (Ta) | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS:-2 |
58.908 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.5V, 4.5V | 55mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | +6V, -8V | 630pF @ 10V | - | 1W (Ta) | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS=-3 |
54.216 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE PCH |
29.214 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.8V, 10V | 110mOhm @ 2A, 10V | 1.2V @ 1mA | 5.1nC @ 4.5V | ±12V | 210pF @ 10V | - | 1.2W (Ta) | 150°C | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS=-3 |
53.628 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE NCH |
28.368 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 38V | 2A (Ta) | 4V, 10V | 340mOhm @ 1A, 10V | 2.4V @ 1mA | 2.5nC @ 10V | ±20V | 86pF @ 10V | - | 2W (Ta) | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS:-2 |
24.846 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 1.5V, 4.5V | 103mOhm @ 1A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | +6V, -8V | 270pF @ 10V | - | 500mW (Ta) | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE PCH |
79.590 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 3.6A (Ta) | 1.8V, 10V | 50mOhm @ 3A, 10V | 1.2V @ 1mA | 7.9nC @ 4.5V | ±12V | 560pF @ 15V | - | 500mW (Ta) | 150°C | Surface Mount | ES6 | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
X34 PB-F UF6 S-MOS (LF) TRANSIST |
22.326 |
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U-MOSIV | P-Channel | MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 2V, 4.5V | 64mOhm @ 1.5A, 4.5V | 1.2V @ 200µA | - | ±10V | 800pF @ 10V | - | 500mW (Ta) | 150°C | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
SMALL PCH LOW ON RESISTANCE MOSF |
55.236 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 1.5V, 4.5V | 93mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | ±8V | 290pF @ 10V | - | 500mW (Ta) | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS:-2 |
44.556 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 1.5V, 4.5V | 93mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | +6V, -8V | 290pF @ 10V | - | 500mW (Ta) | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE NCH |
25.878 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 20V | 800mA (Ta) | 1.2V, 4.5V | 57mOhm @ 800mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V | ±8V | 177pF @ 10V | - | 1W (Ta) | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS:-2 |
21.612 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 5.5A (Ta) | 1.5V, 4.5V | 29.8mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | +6V, -8V | 840pF @ 10V | - | 500mW (Ta) | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CHANNEL 12V 4.8A ES6 |
34.770 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 12V | 4.8A (Ta) | 1.5V, 4.5V | 32mOhm @ 3.5A, 4.5V | 1V @ 1mA | 12.7nC @ 4.5V | ±8V | 1040pF @ 12V | - | 700mW (Ta) | 150°C | Surface Mount | ES6 | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 3.5A 6-UDFNB |
57.630 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 3.5A (Ta) | 4.5V, 10V | 69mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2nC @ 4.5V | ±20V | 430pF @ 15V | - | 2.5W (Ta) | 150°C | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE NCH |
45.324 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 34V | 2A (Ta) | 4V, 10V | 240mOhm @ 1A, 10V | 1.7V @ 1mA | 3nC @ 10V | ±20V | 119pF @ 10V | - | 800mW (Ta) | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS:-2 |
28.158 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 4.4A (Ta) | 1.5V, 4.5V | 25.8mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | +6V, -8V | 1800pF @ 10V | - | 500mW (Ta) | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |