Toshiba Semiconductor and Storage Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerToshiba Semiconductor and Storage
Datensätze 786
Seite 4/27
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 9.6A 8TSON |
29.418 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 9.6A (Tc) | 10V | 30mOhm @ 4.8A, 10V | 4V @ 100µA | 11nC @ 10V | ±20V | 920pF @ 40V | - | 700mW (Ta), 27W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 63A 8TSON |
219.186 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 4.3mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8nC @ 10V | ±20V | 1400pF @ 15V | - | 700mW (Ta), 34W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 63A 8SOP |
33.012 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8nC @ 10V | ±20V | 1400pF @ 15V | - | 1.6W (Ta), 36W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 47A 8-SOP |
52.056 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 47A (Tc) | 4.5V, 10V | 3.2mOhm @ 23.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | ±20V | 2100pF @ 15V | - | 1.6W (Ta), 44W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
103.212 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Tc) | 4.5V, 10V | 13.5mOhm @ 10A, 4.5V | 2.5V @ 200µA | 22nC @ 10V | ±20V | 1875pF @ 30V | - | 81W (Tc) | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 650V 7A DPAK |
23.004 |
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DTMOSV | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 560mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | ±30V | 380pF @ 300V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 7A DPAK |
22.512 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 7A (Ta) | 10V | 48mOhm @ 3.5A, 10V | 4V @ 100µA | 7.1nC @ 10V | ±20V | 470pF @ 10V | - | 50W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 8A DPAK |
30.606 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Ta) | 10V | 560mOhm @ 4A, 10V | 4.5V @ 400µA | 22nC @ 10V | ±30V | 590pF @ 300V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 28A 8-SOP ADV |
43.596 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 28A (Ta) | 10V | 5.9mOhm @ 14A, 10V | 4V @ 300µA | 38nC @ 10V | ±20V | 3100pF @ 30V | - | 1.6W (Ta), 57W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N -CH 600V 30.8A DFN |
24.174 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 109mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105nC @ 10V | ±30V | 3000pF @ 300V | - | 240W (Tc) | 150°C (TA) | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
17.622 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 7.2mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2nC @ 10V | ±20V | 3280pF @ 30V | - | 87W (Tc) | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 100V 148A TO220 |
30.546 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 148A (Ta) | 10V | 4.8mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | ±20V | 5400pF @ 50V | - | 192W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 9.5A TO220SIS |
6.732 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 800V | 9.5A (Ta) | 10V | 550mOhm @ 4.8A, 10V | 4V @ 450µA | 19nC @ 10V | ±20V | 1150pF @ 300V | - | 40W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 11.5A TO220SIS |
7.470 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 800V | 11.5A (Ta) | 10V | 450mOhm @ 5.8A, 10V | 4V @ 570µA | 23nC @ 10V | ±20V | 1400pF @ 300V | - | 45W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 11.5A TO220 |
9.324 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 800V | 11.5A (Ta) | 10V | 450mOhm @ 5.8A, 10V | 4V @ 570µA | 23nC @ 10V | ±20V | 1400pF @ 300V | - | 165W (Tc) | 150°C | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 100A TO220 |
15.900 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Ta) | 10V | 3.4mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | ±20V | 8800pF @ 50V | - | 255W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 17A TO220SIS |
15.156 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Ta) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 850µA | 32nC @ 10V | ±20V | 2050pF @ 300V | - | 45W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 100A TO-220 |
7.680 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 3.8mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | ±20V | 8800pF @ 50V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO-220SIS |
8.550 |
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DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 140mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60nC @ 10V | ±30V | 2400pF @ 300V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A TO-247 |
22.656 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 99mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105nC @ 10V | ±30V | 3000pF @ 300V | - | 230W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 61.8A TO-247 |
17.748 |
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DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 61.8A (Ta) | 10V | 40mOhm @ 21A, 10V | 3.5V @ 3.1mA | 135nC @ 10V | ±30V | 6500pF @ 300V | Super Junction | 400W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 38.8A TO-3P(N) |
7.392 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 135nC @ 10V | ±30V | 4100pF @ 300V | Super Junction | 270W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 61.8A TO-3P(N) |
6.732 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 61.8A (Ta) | 10V | 38mOhm @ 30.9A, 10V | 3.7V @ 3.1mA | 180nC @ 10V | ±30V | 6500pF @ 300V | Super Junction | 400W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET P CH 20V 6A 2-2AA1A |
25.284 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.5V, 4.5V | 23.1mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | ±8V | 1800pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 32A 8SOP |
23.784 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta) | 4.5V, 10V | 11mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | ±20V | 660pF @ 15V | - | 1.6W (Ta), 21W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 50A DP TO252-3 |
29.028 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Ta) | 4.5V, 10V | 8.7mOhm @ 25A, 10V | 2.3V @ 500µA | 38nC @ 10V | ±20V | 2600pF @ 10V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | DP | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
22.296 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 30V | 88A (Tc) | 4.5V, 10V | 4.2mOhm @ 44A, 4.5V | 2.1V @ 300µA | 50nC @ 10V | ±20V | 3825pF @ 15V | - | 90W (Tc) | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 650V 9.7A DPAK |
23.442 |
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DTMOSV | N-Channel | MOSFET (Metal Oxide) | 650V | 9.7A (Tc) | 10V | 380mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | ±30V | 590pF @ 300V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 22A 8-SOP ADV |
48.144 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 22A (Ta) | 10V | 7.5mOhm @ 11A, 10V | 4V @ 300µA | 31nC @ 10V | ±20V | 2320pF @ 30V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 65A DPAK |
17.010 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 40V | 65A (Ta) | 10V | 4.3mOhm @ 32.5A, 10V | 2.5V @ 300µA | 39nC @ 10V | ±20V | 2550pF @ 10V | - | 107W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |