Toshiba Semiconductor and Storage Transistoren - FETs, MOSFETs - Single

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Technologie

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Drain to Source Voltage (Vdss)

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Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.

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Antriebsspannung (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs (th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

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Eingangskapazität (Ciss) (Max) @ Vds

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FET-Funktion

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Verlustleistung (max.)

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Betriebstemperatur

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Montagetyp

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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single

HerstellerToshiba Semiconductor and Storage

Datensätze 786

Seite 26/27

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	FET-Typ	Technologie	Drain to Source Voltage (Vdss)	Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.	Antriebsspannung (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Eingangskapazität (Ciss) (Max) @ Vds	FET-Funktion	Verlustleistung (max.)	Betriebstemperatur	Montagetyp	Lieferantengerätepaket	Paket / Fall
SSM3K7002BF,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 0.2A S-MINI	6.444	U-MOSIV	N-Channel	MOSFET (Metal Oxide)	60V	200mA (Ta)	4.5V, 10V	2.1Ohm @ 500mA, 10V	-	-	±20V	17pF @ 25V	-	200mW (Ta)	150°C (TJ)	Surface Mount	SC-59	TO-236-3, SC-59, SOT-23-3
TK12V60W,LVQ	Toshiba Semiconductor and Storage	MOSFET N CH 600V 11.5A 5DFN	4.374	DTMOSIV	N-Channel	MOSFET (Metal Oxide)	600V	11.5A (Ta)	10V	300mOhm @ 5.8A, 10V	3.7V @ 600µA	25nC @ 10V	±30V	890pF @ 300V	Super Junction	104W (Tc)	150°C (TJ)	Surface Mount	4-DFN-EP (8x8)	4-VSFN Exposed Pad
TK16V60W,LVQ	Toshiba Semiconductor and Storage	MOSFET N CH 600V 15.8A 5DFN	4.644	DTMOSIV	N-Channel	MOSFET (Metal Oxide)	600V	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	3.7V @ 790µA	38nC @ 10V	±30V	1350pF @ 300V	Super Junction	139W (Tc)	150°C (TJ)	Surface Mount	4-DFN-EP (8x8)	4-VSFN Exposed Pad
TK46A08N1,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 80V 46A TO-220	3.582	U-MOSVIII-H	N-Channel	MOSFET (Metal Oxide)	80V	46A (Tc)	10V	8.4mOhm @ 23A, 10V	4V @ 500µA	37nC @ 10V	±20V	2500pF @ 40V	-	35W (Tc)	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
TPCF8107,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 6A VS-8	5.004	U-MOSVI	P-Channel	MOSFET (Metal Oxide)	30V	6A (Ta)	4.5V, 10V	28mOhm @ 3A, 10V	2V @ 100µA	22nC @ 10V	+20V, -25V	970pF @ 10V	-	700mW (Ta)	150°C (TJ)	Surface Mount	VS-8 (2.9x1.5)	8-SMD, Flat Lead
TK17E65W,S1X	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 17.3A TO-220AB	8.064	DTMOSIV	N-Channel	MOSFET (Metal Oxide)	650V	17.3A (Ta)	10V	200mOhm @ 8.7A, 10V	3.5V @ 900µA	45nC @ 10V	±30V	1800pF @ 300V	-	165W (Tc)	150°C (TJ)	Through Hole	TO-220	TO-220-3
TK16E60W5,S1VX	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 15.8A TO-220AB	3.436	DTMOSIV	N-Channel	MOSFET (Metal Oxide)	600V	15.8A (Ta)	10V	230mOhm @ 7.9A, 10V	4.5V @ 790µA	43nC @ 10V	±30V	1350pF @ 300V	-	130W (Tc)	150°C (TJ)	Through Hole	TO-220	TO-220-3
SSM3K17SU,LF(D	Toshiba Semiconductor and Storage	MOSFET N-CH 50V 100MA USM	6.336	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SJ438(AISIN,A,Q)	Toshiba Semiconductor and Storage	MOSFET P-CH	8.640	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220NIS	TO-220-3 Full Pack
2SJ438(AISIN,Q,M)	Toshiba Semiconductor and Storage	MOSFET P-CH	7.974	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220NIS	TO-220-3 Full Pack
2SJ438(CANO,A,Q)	Toshiba Semiconductor and Storage	MOSFET P-CH	8.622	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220NIS	TO-220-3 Full Pack
2SJ438(CANO,Q,M)	Toshiba Semiconductor and Storage	MOSFET P-CH	4.644	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220NIS	TO-220-3 Full Pack
2SJ438,MDKQ(J	Toshiba Semiconductor and Storage	MOSFET P-CH	3.024	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220NIS	TO-220-3 Full Pack
2SJ438,MDKQ(M	Toshiba Semiconductor and Storage	MOSFET P-CH	4.824	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220NIS	TO-220-3 Full Pack
2SJ438,Q(J	Toshiba Semiconductor and Storage	MOSFET P-CH	5.364	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220NIS	TO-220-3 Full Pack
2SJ438,Q(M	Toshiba Semiconductor and Storage	MOSFET P-CH	6.264	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220NIS	TO-220-3 Full Pack
2SK2962(T6CANO,A,F	Toshiba Semiconductor and Storage	MOSFET N-CH	4.950	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2962(T6CANO,F,M	Toshiba Semiconductor and Storage	MOSFET N-CH	3.096	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2962(TE6,F,M)	Toshiba Semiconductor and Storage	MOSFET N-CH	2.412	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2962,F(J	Toshiba Semiconductor and Storage	MOSFET N-CH	7.650	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2962,T6F(J	Toshiba Semiconductor and Storage	MOSFET N-CH	6.660	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2962,T6F(M	Toshiba Semiconductor and Storage	MOSFET N-CH	5.670	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2962,T6WNLF(J	Toshiba Semiconductor and Storage	MOSFET N-CH	6.948	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2962,T6WNLF(M	Toshiba Semiconductor and Storage	MOSFET N-CH	5.778	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2989(T6CANO,A,F	Toshiba Semiconductor and Storage	MOSFET N-CH	2.862	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2989(T6CANO,F,M	Toshiba Semiconductor and Storage	MOSFET N-CH	5.688	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2989(TPE6,F,M)	Toshiba Semiconductor and Storage	MOSFET N-CH	8.838	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2989,F(J	Toshiba Semiconductor and Storage	MOSFET N-CH	4.986	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK2989,T6F(J	Toshiba Semiconductor and Storage	MOSFET N-CH	5.076	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
2SK3670(F,M)	Toshiba Semiconductor and Storage	MOSFET N-CH	5.796	*	-	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body

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