Taiwan Semiconductor Corporation Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerTaiwan Semiconductor Corporation
Datensätze 301
Seite 4/11
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 4A TO251 |
114.702 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 900mOhm @ 1.2A, 10V | 4V @ 250µA | 9.6nC @ 10V | ±30V | 315pF @ 100V | - | 36.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 650V 7A ITO220S |
15.570 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 1.35Ohm @ 2A, 10V | 4.5V @ 250µA | 24nC @ 10V | ±30V | 1169pF @ 50V | - | 44.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 800V 3A TO251 |
33.828 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 4.2Ohm @ 1.5A, 10V | 4V @ 250µA | 19nC @ 10V | ±30V | 696pF @ 25V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 900V 2.5A TO251 |
16.098 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 2.5A (Tc) | 10V | 5.1Ohm @ 1.25A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 748pF @ 25V | - | 94W (Tc) | 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 700V 6A TO251 |
16.554 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 6A (Tc) | 10V | 750mOhm @ 1.8A, 10V | 4V @ 250µA | 10.7nC @ 10V | ±30V | 555pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 800V 5.5A TO251 |
26.658 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 5.5A (Tc) | 10V | 1.2Ohm @ 2.75A, 10V | 4V @ 250µA | 19.4nC @ 10V | ±30V | 685pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 8A ITO220S |
27.276 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 250µA | 16nC @ 10V | ±30V | 528pF @ 100V | - | 41.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 800V 6A TO251 |
32.622 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 950mOhm @ 3A, 10V | 4V @ 250µA | 19.6nC @ 10V | ±30V | 691pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 9.5A TO251 |
30.540 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 9.5A (Tc) | 10V | 380mOhm @ 2.85A, 10V | 4V @ 250µA | 19.4nC @ 10V | ±30V | 795pF @ 100V | - | 83W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 700V 11A ITO220 |
34.170 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 11A (Tc) | 10V | 380mOhm @ 3.3A, 10V | 4V @ 250µA | 18.8nC @ 10V | ±30V | 981pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 18A TO220 |
28.302 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 190mOhm @ 6A, 10V | 4V @ 250µA | 31nC @ 10V | ±30V | 1273pF @ 100V | - | 33.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 100V 160A TO220 |
29.970 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 160A (Tc) | 10V | 5.5mOhm @ 30A, 10V | 4V @ 250µA | 154nC @ 10V | ±20V | 9840pF @ 30V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 18A ITO220 |
27.696 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 190mOhm @ 6A, 10V | 4V @ 250µA | 31nC @ 10V | ±30V | 1273pF @ 100V | - | 33.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 900V 9A ITO220 |
18.288 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 9A (Tc) | 10V | 1.4Ohm @ 4.5A, 10V | 4V @ 250µA | 72nC @ 10V | ±30V | 2470pF @ 25V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 900V 7A ITO220 |
18.612 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 7A (Tc) | 10V | 1.9Ohm @ 3.5A, 10V | 4V @ 250µA | 49nC @ 10V | ±30V | 1969pF @ 25V | - | 40.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET SINGLE N-CHANNEL TRENCH |
42.804 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 7A (Ta), 28A (Tc) | 4.5V, 10V | 28mOhm @ 7A, 10V | 2.5V @ 250µA | 18nC @ 10V | ±20V | 969pF @ 30V | - | 3.1W (Ta), 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET SINGLE N-CHANNEL TRENCH |
24.912 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 10A (Ta), 41A (Tc) | 10V | 15mOhm @ 10A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 1092pF @ 20V | - | 3.1W (Ta), 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET SINGLE N-CHANNEL TRENCH |
23.754 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 10A (Ta), 41A (Tc) | 4.5V, 10V | 15mOhm @ 10A, 10V | 2.5V @ 250µA | 18nC @ 10V | ±20V | 966pF @ 20V | - | 3.1W (Ta), 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET SINGLE N-CHANNEL TRENCH |
20.520 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 6A (Ta), 27A (Tc) | 10V | 30mOhm @ 6A, 10V | 4.5V @ 250µA | 18nC @ 10V | ±20V | 1110pF @ 30V | - | 3.1W (Ta), 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET SINGLE N-CHANNEL TRENCH |
20.304 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 12A (Ta), 54A (Tc) | 10V | 11mOhm @ 12A, 10V | 4V @ 250µA | 23nC @ 10V | ±20V | 1443pF @ 20V | - | 3.1W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET SINGLE N-CHANNEL TRENCH |
23.676 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 12A (Ta), 54A (Tc) | 4.5V, 10V | 11mOhm @ 12A, 10V | 2.5V @ 250µA | 23nC @ 10V | ±20V | 1269pF @ 20V | - | 3.1W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET SINGLE N-CHANNEL TRENCH |
21.336 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 15A (Ta), 75A (Tc) | 10V | 7mOhm @ 15A, 10V | 4V @ 250µA | 40nC @ 10V | ±20V | 2403pF @ 20V | - | 3.1W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET SINGLE N-CHANNEL TRENCH |
20.802 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 15A (Ta), 75A (Tc) | 4.5V, 10V | 7mOhm @ 15A, 10V | 2.5V @ 250µA | 39nC @ 10V | ±20V | 2151pF @ 20V | - | 3.1W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET SINGLE N-CHANNEL TRENCH |
21.330 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Ta), 51A (Tc) | 10V | 13mOhm @ 10A, 10V | 4V @ 250µA | 36nC @ 10V | ±20V | 2380pF @ 30V | - | 3.1W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET SINGLE N-CHANNEL TRENCH |
21.960 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Ta), 51A (Tc) | 4.5V, 10V | 13mOhm @ 10A, 10V | 2.5V @ 250µA | 37nC @ 10V | ±20V | 2175pF @ 30V | - | 3.1W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET SINGLE N-CHANNEL TRENCH |
20.814 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 21A (Ta), 121A (Tc) | 10V | 3.3mOhm @ 21A, 10V | 4V @ 250µA | 77nC @ 10V | ±20V | 5022pF @ 20V | - | 3.1W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET SINGLE N-CHANNEL TRENCH |
36.324 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 16A (Ta), 107A (Tc) | 4.5V, 10V | 4.8mOhm @ 16A, 10V | 2.5V @ 250µA | 105nC @ 10V | ±20V | 6253pF @ 30V | - | 3.1W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET SINGLE N-CHANNEL TRENCH |
24.270 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 24A (Ta), 161A (Tc) | 10V | 2.5mOhm @ 24A, 10V | 4V @ 250µA | 113nC @ 10V | ±20V | 7150pF @ 20V | - | 3.1W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET SINGLE N-CHANNEL TRENCH |
23.988 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 24A (Ta), 161A (Tc) | 4.5V, 10V | 2.5mOhm @ 24A, 10V | 2.5V @ 250µA | 112nC @ 10V | ±20V | 6435pF @ 20V | - | 3.1W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET SINGLE N-CHANNEL TRENCH |
24.750 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 16A (Ta), 104A (Tc) | 10V | 5mOhm @ 16A, 10V | 4V @ 250µA | 104nC @ 10V | ±20V | 6870pF @ 30V | - | 3.1W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |