Taiwan Semiconductor Corporation Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerTaiwan Semiconductor Corporation
Datensätze 301
Seite 3/11
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 11A TO252 |
22.146 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 4V @ 250µA | 20.5nC @ 10V | ±30V | 1040pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 1000V 1.85A TO251 |
16.896 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 1.85A (Tc) | 10V | 8.5Ohm @ 900mA, 10V | 5.5V @ 250µA | 17nC @ 10V | ±30V | 625pF @ 25V | - | 77W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 11A TO220 |
34.212 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 4V @ 250µA | 20.5nC @ 10V | ±30V | 1040pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 18A ITO220S |
30.282 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 190mOhm @ 3.7A, 10V | 4V @ 250µA | 32nC @ 10V | ±30V | 1311pF @ 100V | - | 59.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 800V 12A ITO220S |
20.724 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 12A (Tc) | 10V | 400mOhm @ 2.7A, 10V | 4V @ 250µA | 51nC @ 10V | ±30V | 1848pF @ 100V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 6.5A SOT26 |
100.080 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 6.5A (Tc) | 4.5V, 10V | 24mOhm @ 6A, 10V | 2.5V @ 250µA | 4.1nC @ 4.5V | ±20V | 345pF @ 25V | - | 1.56W (Tc) | 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 9A 8SOP |
23.190 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Tc) | 4.5V, 10V | 18mOhm @ 8A, 10V | 2V @ 250µA | 14nC @ 4.5V | ±20V | 345pF @ 25V | - | 2.5W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 30V 4.7A 8SOP |
20.730 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 4.7A (Tc) | 4.5V, 10V | 60mOhm @ 3A, 10V | 2.5V @ 250µA | 9.6nC @ 4.5V | ±20V | 560pF @ 15V | - | 2.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 30V 5.3A 8SOP |
19.284 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 5.3A (Tc) | 4.5V, 10V | 60mOhm @ 5.3A, 10V | 3V @ 250µA | 27nC @ 10V | ±20V | 551.57pF @ 15V | - | 5.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 30V 10A 8SOP |
18.852 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 10A (Tc) | 4.5V, 10V | 18mOhm @ 8A, 10V | 2.5V @ 250µA | 23nC @ 4.5V | ±20V | 1730pF @ 15V | - | 2.5W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 55A 8PDFN |
22.236 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 55A (Tc) | 4.5V, 10V | 8mOhm @ 16A, 10V | 2.5V @ 250µA | 7.5nC @ 4.5V | ±20V | 750pF @ 25V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 73A 8PDFN |
26.988 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 73A (Tc) | 4.5V, 10V | 8mOhm @ 14A, 10V | 2.5V @ 250µA | 14.4nC @ 10V | ±20V | 843pF @ 15V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET P-CH 20V 4.5A 6-TDFN |
98.310 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 1.8V, 4.5V | 94mOhm @ 2.8A, 4.5V | 500mV @ 250µA | 4.5nC @ 4.5V | ±12V | 5.2pF @ 6V | - | 6.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TDFN (2x2) | 6-VDFN Exposed Pad |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 80A 8PDFN |
24.414 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 5.5mOhm @ 20A, 10V | 2.5V @ 250µA | 11.1nC @ 4.5V | ±20V | 1210pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 60V 3.5A 8SOP |
20.172 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 3.5A (Ta) | 4.5V, 10V | 155mOhm @ 3.5A, 10V | 1V @ 250µA | 6nC @ 10V | ±20V | 540pF @ 30V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 124A 8PDFN |
22.446 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 124A (Tc) | 4.5V, 10V | 3.6mOhm @ 22A, 10V | 2.5V @ 250µA | 50nC @ 10V | ±20V | 2530pF @ 15V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 108A 8PDFN |
26.070 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 108A (Tc) | 4.5V, 10V | 4.5mOhm @ 18A, 10V | 2.5V @ 250µA | 19nC @ 10V | ±20V | 1194pF @ 15V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 40V 91A 8PDFN |
22.080 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 91A (Tc) | 4.5V, 10V | 7mOhm @ 14A, 10V | 2.5V @ 250µA | 23.5nC @ 10V | ±20V | 1469pF @ 20V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 4A TO252 |
122.808 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 900mOhm @ 1.2A, 10V | 4V @ 250µA | 9.6nC @ 10V | ±30V | 315pF @ 100V | - | 36.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 168A 8PDFN |
26.862 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 168A (Tc) | 4.5V, 10V | 2.6mOhm @ 24A, 10V | 2.5V @ 250µA | 41nC @ 10V | ±20V | 2540pF @ 15V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 150V 9A 8SOP |
46.392 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 9A (Tc) | 6V, 10V | 65mOhm @ 4A, 10V | 4V @ 250µA | 37nC @ 10V | ±20V | 1783pF @ 75V | - | 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 185A 8PDFN |
24.432 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 185A (Tc) | 4.5V, 10V | 1.8mOhm @ 29A, 10V | 2.5V @ 250µA | 56nC @ 10V | ±20V | 3479pF @ 15V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 40V 170A 8PDFN |
21.972 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 170A (Tc) | 4.5V, 10V | 2.4mOhm @ 25A, 10V | 2.5V @ 250µA | 67nC @ 10V | ±20V | 4224pF @ 20V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 40V 141A 8PDFN |
26.700 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 141A (Tc) | 4.5V, 10V | 3.3mOhm @ 20A, 10V | 2.5V @ 250µA | 47nC @ 10V | ±20V | 3130pF @ 20V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 205A 8PDFN |
24.570 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 205A (Tc) | 4.5V, 10V | 1.5mOhm @ 32A, 10V | 2.5V @ 250µA | 67nC @ 10V | ±20V | 4243pF @ 15V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 2A TO251 |
29.574 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4Ohm @ 1A, 10V | 5V @ 250µA | 9.5nC @ 10V | ±30V | 362pF @ 25V | - | 52.1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 1A TO251 |
17.772 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 1A (Tc) | 10V | 10Ohm @ 500mA, 10V | 4.5V @ 250µA | 6.1nC @ 10V | ±30V | 138pF @ 25V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 250V 8A TO251 |
19.842 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 8A (Tc) | 10V | 600mOhm @ 4A, 10V | 5V @ 250µA | 8.4nC @ 10V | ±30V | 423pF @ 25V | - | 52W (Tc) | 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 650V 4A TO251 |
77.814 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 3.37Ohm @ 2A, 10V | 4.5V @ 250µA | 13.46nC @ 10V | ±30V | 549pF @ 25V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 800V 5.5A TO252 |
38.514 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 5.5A (Tc) | 10V | 1.2Ohm @ 2.75A, 10V | 4V @ 250µA | 19.4nC @ 10V | ±30V | 685pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |