TSM055N03EPQ56 RLG
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Nur als Referenz
Teilenummer | TSM055N03EPQ56 RLG |
PNEDA Teilenummer | TSM055N03EPQ56-RLG |
Beschreibung | MOSFET N-CH 30V 80A 8PDFN |
Hersteller | Taiwan Semiconductor Corporation |
Stückpreis | Angebot anfordern |
Auf Lager | 24.414 |
Lager | Shipped from Hong Kong SAR |
Voraussichtliche Lieferung | Mär 1 - Mär 6 (Wählen Sie Expressed Shipping) |
Guarantee | Bis zu 1 Jahr [PNEDA-Garantie] * |
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TSM055N03EPQ56 RLG Ressourcen
Marke | Taiwan Semiconductor Corporation |
ECAD Module |
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Mfr. Artikelnummer | TSM055N03EPQ56 RLG |
Kategorie | Halbleiter › Transistoren › Transistoren - FETs, MOSFETs - Single |
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TSM055N03EPQ56 RLG Technische Daten
Hersteller | Taiwan Semiconductor Corporation |
Serie | - |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | 80A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 5.5mOhm @ 20A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11.1nC @ 4.5V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1210pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 74W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Montagetyp | Surface Mount |
Lieferantengerätepaket | 8-PDFN (5x6) |
Paket / Fall | 8-PowerTDFN |
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Hersteller ON Semiconductor Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 60A (Ta) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 14mOhm @ 30A, 10V Vgs (th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 3220pF @ 25V FET-Funktion - Verlustleistung (max.) 2.4W (Ta), 150W (Tj) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket D2PAK Paket / Fall TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Hersteller Infineon Technologies Serie HEXFET® FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 61A (Ta), 270A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.7mOhm @ 61A, 10V Vgs (th) (Max) @ Id 2.35V @ 150µA Gate Charge (Qg) (Max) @ Vgs 96nC @ 4.5V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 6500pF @ 13V FET-Funktion - Verlustleistung (max.) 4.3W (Ta), 83W (Tc) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket DIRECTFET L6 Paket / Fall DirectFET™ Isometric L6 |
Hersteller Vishay Siliconix Serie - FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 3.5A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.5A, 10V Vgs (th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 350pF @ 25V FET-Funktion - Verlustleistung (max.) 3W (Ta), 40W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket D2PAK Paket / Fall TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Hersteller Alpha & Omega Semiconductor Inc. Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 8.5A (Ta) Antriebsspannung (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 24mOhm @ 8.5A, 10V Vgs (th) (Max) @ Id 1.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V Vgs (Max) ±12V Eingangskapazität (Ciss) (Max) @ Vds 630pF @ 15V FET-Funktion - Verlustleistung (max.) 3.1W (Ta) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 8-SO Paket / Fall 8-SOIC (0.154", 3.90mm Width) |
Hersteller Diodes Incorporated Serie Automotive, AEC-Q101 FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 50A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 23mOhm @ 12A, 10V Vgs (th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20.1nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 1143pF @ 25V FET-Funktion - Verlustleistung (max.) 2.1W (Ta) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket TO-252-4L Paket / Fall TO-252-5, DPak (4 Leads + Tab), TO-252AD |