Taiwan Semiconductor Corporation Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerTaiwan Semiconductor Corporation
Datensätze 301
Seite 7/11
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Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 700V 8A TO251 |
16.044 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 8A (Tc) | 10V | 600mOhm @ 4A, 10V | 4V @ 250µA | 12.6nC @ 10V | ±30V | 743pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 900V 4A TO220 |
18.120 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 4A (Tc) | 10V | 4Ohm @ 2A, 10V | 4V @ 250µA | 25nC @ 10V | ±30V | 955pF @ 25V | - | 38.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 700V 8A TO262S |
17.808 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 8A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 4V @ 250µA | 12.6nC @ 10V | ±30V | 743pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262S (I2PAK) | TO-262-3 Short Leads, I²Pak |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 75V 80A TO220 |
17.568 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 8mOhm @ 40A, 10V | 4V @ 250µA | 91.5nC @ 10V | ±20V | 3905pF @ 30V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 800V 3A TO220 |
16.716 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 4.2Ohm @ 1.5A, 10V | 4V @ 250µA | 19nC @ 10V | ±30V | 696pF @ 25V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 700V 8A ITO220 |
19.692 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 8A (Tc) | 10V | 600mOhm @ 4A, 10V | 4V @ 250µA | 12.6nC @ 10V | ±30V | 743pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 800V 6A ITO220 |
20.808 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 950mOhm @ 2A, 10V | 4V @ 250µA | 19.6nC @ 10V | ±30V | 691pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 800V 5.5A ITO220 |
23.424 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 5.5A (Tc) | 10V | 1.2Ohm @ 1.8A, 10V | 4V @ 250µA | 19.4nC @ 10V | ±30V | 685pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 500V 14A TO220 |
18.648 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 440mOhm @ 7A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 2263pF @ 25V | - | - | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 500V 14A ITO220 |
23.604 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 440mOhm @ 7A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 2263pF @ 25V | - | - | 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 900V 2.5A ITO220 |
23.268 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 2.5A (Tc) | 10V | 5.1Ohm @ 1.25A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 748pF @ 25V | - | 94W (Tc) | 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 900V 2.5A TO220 |
19.440 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 2.5A (Tc) | 10V | 5.1Ohm @ 1.25A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 748pF @ 25V | - | 94W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 11A ITO220 |
17.796 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 4V @ 250µA | 20.5nC @ 10V | ±30V | 1040pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 13A ITO220 |
16.920 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 260mOhm @ 3.9A, 10V | 4V @ 250µA | 30nC @ 10V | ±30V | 1273pF @ 100V | - | 32.1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 800V 8A TO220 |
23.628 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 1.05Ohm @ 4A, 10V | 4V @ 250µA | 41nC @ 10V | ±30V | 1921pF @ 25V | - | 40.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 800V 8A ITO220 |
17.640 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 1.05Ohm @ 4A, 10V | 4V @ 250µA | 41nC @ 10V | ±30V | 1921pF @ 25V | - | 40.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 900V 7A TO220 |
19.200 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 7A (Tc) | 10V | 1.9Ohm @ 3.5A, 10V | 4V @ 250µA | 49nC @ 10V | ±30V | 1969pF @ 25V | - | 40.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 900V 9A TO220 |
23.592 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 9A (Tc) | 10V | 1.4Ohm @ 4.5A, 10V | 4V @ 250µA | 72nC @ 10V | ±30V | 2470pF @ 25V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 800V 9.5A ITO220 |
21.648 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 9.5A (Tc) | 10V | 1.05Ohm @ 4.75A, 10V | 4V @ 250µA | 53nC @ 10V | ±30V | 2336pF @ 25V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 800V 9.5A TO220 |
21.996 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 9.5A (Tc) | 10V | 1.05Ohm @ 4.75A, 10V | 4V @ 250µA | 53nC @ 10V | ±30V | 2336pF @ 25V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 500V 5A TO220 |
18.120 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.38Ohm @ 2.5A, 10V | 4.5V @ 250µA | 15nC @ 10V | ±30V | 586pF @ 50V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 20V 11A 8SOP |
3.240 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 11A (Tc) | 1.8V, 4.5V | 16mOhm @ 6A, 4.5V | 1V @ 250µA | 27nC @ 4.5V | ±10V | 2320pF @ 15V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 500V 4A TO252 |
6.822 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 4A (Tc) | 10V | 2.7Ohm @ 1.7A, 10V | 3V @ 250µA | 12nC @ 10V | ±20V | 453pF @ 50V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 18A TO263 |
8.154 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 190mOhm @ 6A, 10V | 4V @ 250µA | 31nC @ 10V | ±30V | 1273pF @ 100V | - | 150.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 60V 44A 8PDFN |
3.942 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 44A (Tc) | 4.5V, 10V | 17mOhm @ 8A, 10V | 2.5V @ 250µA | 29nC @ 10V | ±20V | 1556pF @ 30V | - | 73.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 30A TO251 |
5.238 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4.5V, 10V | 34mOhm @ 15A, 10V | 2.5V @ 250µA | 16.6nC @ 10V | ±20V | 1180pF @ 30V | - | 66W (Tc) | 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Stub Leads, IPak |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 34A TO252 |
3.744 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 34A (Tc) | 4.5V, 10V | 23mOhm @ 20A, 10V | 2.5V @ 250µA | 28nC @ 10V | ±20V | 1680pF @ 25V | - | 104W (Tc) | 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 11A ITO220S |
2.916 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 2.7A, 10V | 4V @ 250µA | 21nC @ 10V | ±30V | 810pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
|
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 10A ITO220S |
6.768 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 2.5A, 10V | 4.5V @ 250µA | 33nC @ 10V | ±30V | 1652pF @ 50V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CH 700V 11A TO251 |
7.254 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 11A (Tc) | 10V | 380mOhm @ 3.3A, 10V | 4V @ 250µA | 18.8nC @ 10V | ±30V | 981pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |