Taiwan Semiconductor Corporation Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerTaiwan Semiconductor Corporation
Datensätze 301
Seite 9/11
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 8A ITO220 |
8.118 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Tc) | 10V | 600mOhm @ 4A, 10V | 4V @ 250µA | 13nC @ 10V | ±30V | 743pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 800V 4A ITO220 |
6.498 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 3Ohm @ 1.2A, 10V | 4V @ 250µA | 20nC @ 10V | ±30V | 955pF @ 25V | - | 38.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 800V 5.5A TO262S |
3.888 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 5.5A (Tc) | 10V | 1.2Ohm @ 1.8A, 10V | 4V @ 250µA | 19.4nC @ 10V | ±30V | 685pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262S (I2PAK) | TO-262-3 Short Leads, I²Pak |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 60V 100A 8PDFN |
2.100 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 5.2mOhm @ 20A, 10V | 4V @ 250µA | 50nC @ 10V | ±25V | 3686pF @ 30V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 10A TO252 |
4.644 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Ta) | 4V, 10V | 65mOhm @ 10A, 10V | 3V @ 250µA | 10.5nC @ 4.5V | ±20V | 1100pF @ 30V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 10A ITO220 |
5.832 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 1820pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 100V 58A 8PDFN |
8.550 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 58A (Tc) | 10V | 12mOhm @ 30A, 10V | 4V @ 250µA | 145nC @ 10V | ±20V | 3902pF @ 30V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 500V 13A ITO220 |
7.920 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 480mOhm @ 6.5A, 10V | 4V @ 250µA | 31nC @ 10V | ±30V | 1965pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 500V 13A TO220 |
2.934 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 480mOhm @ 6.5A, 10V | 4V @ 250µA | 31nC @ 10V | ±30V | 1965pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 450V 500MA TO92 |
7.686 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 500mA (Tc) | 10V | 4.25Ohm @ 250mA, 10V | 4.25V @ 250µA | 6.5nC @ 10V | ±30V | 235pF @ 25V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 450V 500MA TO92 |
8.334 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 500mA (Tc) | 10V | 4.25Ohm @ 250mA, 10V | 4.25V @ 250µA | 6.5nC @ 10V | ±30V | 235pF @ 25V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 450V 500MA SOT223 |
5.580 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 500mA (Tc) | 10V | 4.25Ohm @ 250mA, 10V | 4.25V @ 250µA | 6.5nC @ 10V | ±30V | 235pF @ 25V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 450V 500MA 8SOP |
6.156 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 500mA (Tc) | 10V | 4.25Ohm @ 250mA, 10V | 4.9V @ 250mA | 6.5nC @ 10V | ±50V | 185pF @ 25V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 500MA TO92 |
3.526 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 500mA (Tc) | 10V | 10Ohm @ 250mA, 10V | 4.5V @ 250µA | 6.1nC @ 10V | ±30V | 138pF @ 25V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 500MA TO92 |
7.866 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 500mA (Tc) | 10V | 10Ohm @ 250mA, 10V | 4.5V @ 250µA | 6.1nC @ 10V | ±30V | 138pF @ 25V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 210A TO220 |
8.712 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 210A (Tc) | 10V | 3.1mOhm @ 90A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 7900pF @ 30V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 20V 2.8A SOT23 |
7.866 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 2.8A (Tc) | 2.5V, 4.5V | 130mOhm @ 2.8A, 4.5V | 950mV @ 250µA | 4.5nC @ 4.5V | ±8V | 447pF @ 6V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 20V 4A SOT23 |
7.542 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 2.5V, 4.5V | 55mOhm @ 4A, 4.5V | 1.4V @ 250µA | 6nC @ 4.5V | ±8V | 640pF @ 6V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 300MA TO92 |
5.022 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 5V, 10V | 5Ohm @ 100mA, 10V | 2.5V @ 250µA | 0.4nC @ 4.5V | ±20V | 7.32pF @ 25V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 2A TO251 |
5.454 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.4Ohm @ 1A, 10V | 4.5V @ 250µA | 9.4nC @ 10V | ±30V | 249pF @ 25V | - | 44W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 2A TO252 |
5.040 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.4Ohm @ 1A, 10V | 4.5V @ 250µA | 9.4nC @ 10V | ±30V | 249pF @ 25V | - | 44W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 650V 2A TO251 |
2.808 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 2A (Tc) | 10V | 5Ohm @ 1A, 10V | 4V @ 250µA | 13nC @ 10V | ±20V | 390pF @ 25V | - | 65W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Stub Leads, IPak |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 650V 2A TO252 |
2.682 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 2A (Tc) | 10V | 5Ohm @ 1A, 10V | 4V @ 250µA | 13nC @ 10V | ±20V | 390pF @ 25V | - | 65W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 5.8A SOT23 |
2.142 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 5.8A (Ta) | 4.5V, 10V | 30mOhm @ 5.8A, 10V | 3V @ 250µA | 13.8nC @ 10V | ±20V | 400.96pF @ 15V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 30V 9.1A 8SOP |
3.418 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 9.1A (Ta) | 4.5V, 10V | 21mOhm @ 9.1A, 10V | 3V @ 250µA | 3.2nC @ 10V | ±20V | 1900pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 30V 17A 8SOP |
7.506 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta) | 4.5V, 10V | 5.2mOhm @ 9A, 10V | 3V @ 250µA | 78.4nC @ 4.5V | ±20V | 6205pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 700V 3.5A TO251 |
2.412 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 3.5A (Tc) | 10V | 3.3Ohm @ 2A, 10V | 4V @ 250µA | 14nC @ 10V | ±30V | 595pF @ 25V | - | 56W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 700V 3.5A ITO220 |
8.712 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 3.5A (Tc) | 10V | 3.3Ohm @ 2A, 10V | 4V @ 250µA | 14nC @ 10V | ±30V | 595pF @ 25V | - | 56W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 700V 3.5A TO252 |
4.122 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 3.5A (Tc) | 10V | 3.3Ohm @ 2A, 10V | 4V @ 250µA | 14nC @ 10V | ±30V | 595pF @ 25V | - | 56W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 4A TO220 |
4.104 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2.5Ohm @ 2A, 10V | 4.5V @ 250µA | 14.5nC @ 10V | ±30V | 500pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |