Taiwan Semiconductor Corporation Gleichrichter - Single

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Diodentyp

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Spannung - DC-Rückwärtsgang (Vr) (max.)

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Current - Average Rectified (Io)

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Spannung - Vorwärts (Vf) (Max) @ If

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Geschwindigkeit

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Reverse Recovery Time (trr)

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Strom - Umkehrleckage @ Vr

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Kapazität @ Vr, F.

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Montagetyp

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single

HerstellerTaiwan Semiconductor Corporation

Datensätze 5.388

Seite 16/180

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Diodentyp	Spannung - DC-Rückwärtsgang (Vr) (max.)	Current - Average Rectified (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Recovery Time (trr)	Strom - Umkehrleckage @ Vr	Kapazität @ Vr, F.	Montagetyp	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Verbindungsstelle
TSD3G	Taiwan Semiconductor Corporation	3A 400V ESD CAPABILITY RECTIFIER	19.368	-	Standard	400V	3A	-	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
HERF1008GAHC0G	Taiwan Semiconductor Corporation	DIODE, HIGH EFFICIENT	19.356	Automotive, AEC-Q101	Standard	1000V	10A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	10µA @ 1000V	40pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
HERF1007GAHC0G	Taiwan Semiconductor Corporation	DIODE, HIGH EFFICIENT	17.880	Automotive, AEC-Q101	Standard	800V	10A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	10µA @ 800V	40pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
TSD3GHR7G	Taiwan Semiconductor Corporation	3A 400V ESD CAPABILITY RECTIFIER	30.876	Automotive, AEC-Q101	Standard	400V	3A	-	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
BAT54C RFG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 200MA SOT23	4.050	-	Schottky	30V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 125°C
BAT43WS RRG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 200MA SOD323F	5.094	-	Schottky	30V	200mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 25V	7pF @ 1V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323F	-65°C ~ 125°C
HS1DFL	Taiwan Semiconductor Corporation	50NS 1A 200V HIGH EFFICIENT RECO	4.104	-	Standard	200V	1A (DC)	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	11pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
BA159G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A DO204AL	7.812	-	Standard	1000V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR104 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A DO204AL	5.670	-	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
S1JLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SOD123W	7.092	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
TSSE3U45 RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 3A SOD123HE	7.254	-	Schottky	45V	3A	470mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 45V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
SR105 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A DO204AL	4.824	-	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SS15 R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A DO214AC	4.932	-	Schottky	50V	1A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 50V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2BA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1.5A DO214AC	2.772	-	Standard	100V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 100V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
TSSW3U45 RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 3A SOD123W	5.166	-	Schottky	45V	3A	470mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 45V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
SR106 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A DO204AL	3.510	-	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
RS1M R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A DO214AC	7.488	-	Standard	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS12LS RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A SOD123HE	2.016	-	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	80pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 125°C
SS14LSHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SOD123HE	4.230	-	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	80pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
S4A V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 4A DO214AB	19.884	-	Standard	50V	4A	1.15V @ 4A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 50V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S4B V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 4A DO214AB	16.548	-	Standard	100V	4A	1.15V @ 4A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 100V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S4K V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 4A DO214AB	16.380	-	Standard	800V	4A	1.15V @ 4A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 800V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SS12LSHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A SOD123HE	4.770	-	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	80pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 125°C
S5KB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 5A DO214AA	19.104	-	Standard	800V	5A	1.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 800V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S4M V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 4A DO214AB	18.024	-	Standard	1000V	4A	1.15V @ 4A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 1000V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S4D V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO214AB	21.492	-	Standard	200V	4A	1.15V @ 4A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 200V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RS1DLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SOD123W	4.374	-	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
RS3J V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	17.088	-	Standard	600V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	10µA @ 600V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RS3B V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	20.928	-	Standard	100V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3A V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	20.328	-	Standard	50V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C

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