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Taiwan Semiconductor Corporation Gleichrichter - Single

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerTaiwan Semiconductor Corporation
Datensätze 5.388
Seite 13/180
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
Diodentyp
Spannung - DC-Rückwärtsgang (Vr) (max.)
Current - Average Rectified (Io)
Spannung - Vorwärts (Vf) (Max) @ If
Geschwindigkeit
Reverse Recovery Time (trr)
Strom - Umkehrleckage @ Vr
Kapazität @ Vr, F.
Montagetyp
Paket / Fall
Lieferantengerätepaket
Betriebstemperatur - Verbindungsstelle
S3M R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 3A DO214AB
25.236
-
Standard
1000V
3A
1.15V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 1000V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
UG2D A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO204AC
12.408
-
Standard
200V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
ES2B R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO214AA
31.614
-
Standard
100V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
HS3GB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AA
22.164
-
Standard
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
80pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
HS3FB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 3A DO214AA
18.912
-
Standard
300V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
80pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SS34 R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 40V 3A DO214AB
26.880
-
Standard
40V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SS36 R7G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A DO214AB
25.560
-
Schottky
60V
3A
750mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SK34B R5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 3A DO214AA
28.290
-
Schottky
40V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 125°C
TPMR6J S1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 6A TO277A
47.502
-
Standard
600V
6A
1.8V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
10µA @ 600V
60pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
TSPB5H120S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 120V 5A SMPC4.0
15.276
-
Schottky
120V
5A
740mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 120V
-
Surface Mount
TO-277, 3-PowerDFN
SMPC4.0
-55°C ~ 150°C
TSPB5H150S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 5A SMPC4.0
16.464
-
Schottky
150V
5A
840mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface Mount
TO-277, 3-PowerDFN
SMPC4.0
-55°C ~ 150°C
ES3DB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AA
49.296
-
Standard
200V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
46pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES3HB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 3A DO214AA
32.214
-
Standard
500V
3A
1.45V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
34pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
TPUH6J S1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 6A TO277A
51.768
-
Standard
600V
6A
3V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
10µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
TPAU3J S1G
Taiwan Semiconductor Corporation
DIODE AVALANCHE 600V 3A TO277A
31.662
-
Avalanche
600V
3A
1.88V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
60pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
TPAR3J S1G
Taiwan Semiconductor Corporation
DIODE AVALANCHE 600V 3A TO277A
15.066
-
Avalanche
600V
3A
1.55V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
120ns
10µA @ 600V
58pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
TPAU3G S1G
Taiwan Semiconductor Corporation
DIODE AVALANCHE 400V 3A TO277A
17.772
-
Avalanche
400V
3A
1.88V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 400V
60pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
TPAR3D S1G
Taiwan Semiconductor Corporation
DIODE AVALANCHE 200V 3A TO277A
17.526
-
Avalanche
200V
3A
1.55V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
120ns
10µA @ 200V
58pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
MUR320SBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AA
22.752
-
Standard
200V
3A
900mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
45pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
TSP15U50S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 15A TO277A
60.954
-
Schottky
50V
15A
560mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 50V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
TSPB15U45S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 15A SMPC4.0
14.268
-
Schottky
45V
15A
560mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 45V
-
Surface Mount
TO-277, 3-PowerDFN
SMPC4.0
-55°C ~ 150°C
TSPB15U50S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 15A SMPC4.0
14.148
-
Schottky
50V
15A
560mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 50V
-
Surface Mount
TO-277, 3-PowerDFN
SMPC4.0
-55°C ~ 150°C
TSPB15U100S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 15A SMPC4.0
51.498
-
Schottky
100V
15A
700mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 100V
-
Surface Mount
TO-277, 3-PowerDFN
SMPC4.0
-55°C ~ 150°C
TSPB10U45S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 10A SMPC4.0
16.026
-
Schottky
45V
10A
460mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 45V
-
Surface Mount
TO-277, 3-PowerDFN
SMPC4.0
-55°C ~ 150°C
UGF1008G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A ITO220AB
13.518
-
Standard
600V
10A
1.7V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
10µA @ 600V
-
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
-55°C ~ 150°C
SFF1006G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 10A ITO220AB
28.596
-
Standard
400V
10A
1.3V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
50pF @ 4V, 1MHz
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
-55°C ~ 150°C
TST30L150CW C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 15A TO220AB
16.224
-
Schottky
150V
15A
920mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
SFAF1008G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A ITO220AC
37.356
-
Standard
600V
10A
1.7V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
140pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
TST40L60CW C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 20A TO220AB
18.402
-
Schottky
60V
20A
630mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
RB500V-40 RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 100MA SOD323F
525.954
-
Schottky
40V
100mA
450mV @ 10mA
Small Signal =< 200mA (Io), Any Speed
-
1µA @ 10V
6pF @ 10V, 1MHz
Surface Mount
SC-90, SOD-323F
SOD-323F
-40°C ~ 125°C