Taiwan Semiconductor Corporation Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerTaiwan Semiconductor Corporation
Datensätze 5.388
Seite 13/180
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 3A DO214AB |
25.236 |
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- | Standard | 1000V | 3A | 1.15V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 1000V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 2A DO204AC |
12.408 |
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- | Standard | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | 35pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 2A DO214AA |
31.614 |
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- | Standard | 100V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO214AA |
22.164 |
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- | Standard | 400V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 3A DO214AA |
18.912 |
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- | Standard | 300V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 40V 3A DO214AB |
26.880 |
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- | Standard | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 3A DO214AB |
25.560 |
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- | Schottky | 60V | 3A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 3A DO214AA |
28.290 |
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- | Schottky | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 6A TO277A |
47.502 |
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- | Standard | 600V | 6A | 1.8V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 10µA @ 600V | 60pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 120V 5A SMPC4.0 |
15.276 |
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- | Schottky | 120V | 5A | 740mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 120V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 5A SMPC4.0 |
16.464 |
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- | Schottky | 150V | 5A | 840mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AA |
49.296 |
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- | Standard | 200V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 46pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 3A DO214AA |
32.214 |
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- | Standard | 500V | 3A | 1.45V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 500V | 34pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 6A TO277A |
51.768 |
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- | Standard | 600V | 6A | 3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 10µA @ 600V | 50pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE AVALANCHE 600V 3A TO277A |
31.662 |
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- | Avalanche | 600V | 3A | 1.88V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 60pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE AVALANCHE 600V 3A TO277A |
15.066 |
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- | Avalanche | 600V | 3A | 1.55V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 600V | 58pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE AVALANCHE 400V 3A TO277A |
17.772 |
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- | Avalanche | 400V | 3A | 1.88V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | 60pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE AVALANCHE 200V 3A TO277A |
17.526 |
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- | Avalanche | 200V | 3A | 1.55V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 200V | 58pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AA |
22.752 |
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- | Standard | 200V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 15A TO277A |
60.954 |
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- | Schottky | 50V | 15A | 560mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 50V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 15A SMPC4.0 |
14.268 |
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- | Schottky | 45V | 15A | 560mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 45V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 15A SMPC4.0 |
14.148 |
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- | Schottky | 50V | 15A | 560mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 50V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 15A SMPC4.0 |
51.498 |
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- | Schottky | 100V | 15A | 700mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 10A SMPC4.0 |
16.026 |
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- | Schottky | 45V | 10A | 460mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 45V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 10A ITO220AB |
13.518 |
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- | Standard | 600V | 10A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 600V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 10A ITO220AB |
28.596 |
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- | Standard | 400V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 15A TO220AB |
16.224 |
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- | Schottky | 150V | 15A | 920mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 10A ITO220AC |
37.356 |
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- | Standard | 600V | 10A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 140pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 20A TO220AB |
18.402 |
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- | Schottky | 60V | 20A | 630mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 100MA SOD323F |
525.954 |
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- | Schottky | 40V | 100mA | 450mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 1µA @ 10V | 6pF @ 10V, 1MHz | Surface Mount | SC-90, SOD-323F | SOD-323F | -40°C ~ 125°C |