Taiwan Semiconductor Corporation Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerTaiwan Semiconductor Corporation
Datensätze 5.388
Seite 17/180
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 3A DO214AB |
20.688 |
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- | Standard | 800V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A SUB SMA |
5.454 |
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- | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 5µA @ 100V | 9pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO214AB |
15.396 |
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- | Standard | 400V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 2A DO204AC |
6.786 |
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- | Standard | 600V | 2A | 1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1A SUB SMA |
2.646 |
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- | Standard | 50V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1.5A SOD123W |
7.974 |
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- | Standard | 400V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 400V | 10pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 1A SUB SMA |
6.516 |
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- | Standard | 300V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 300V | 8pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1A SOD123W |
5.040 |
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- | Standard | 800V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 800V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 800MA SUB SMA |
6.102 |
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- | Standard | 50V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1.2A SOD123 |
2.412 |
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- | Standard | 600V | 1.2A | 1.3V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 600V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 1A SUB SMA |
7.452 |
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- | Schottky | 50V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 50V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 500MA SUB SMA |
6.480 |
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- | Standard | 1000V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 5A DO214AB |
19.548 |
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- | Standard | 800V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 800V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A SUB SMA |
2.934 |
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Automotive, AEC-Q101 | Standard | 100V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 5A DO214AB |
21.924 |
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- | Standard | 50V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 50V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 5A DO214AB |
17.136 |
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- | Standard | 100V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 100V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 2A DO214AA |
21.276 |
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- | Standard | 150V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 5A DO214AB |
21.660 |
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- | Standard | 400V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 400V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 5A DO214AB |
20.220 |
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- | Standard | 200V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 200V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 5A DO214AA |
21.084 |
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- | Standard | 400V | 5A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 400V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 1A SOD123W |
8.748 |
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- | Schottky | 150V | 1A | 850mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500nA @ 150V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1A MELF |
5.238 |
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- | Standard | 400V | 1A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 400V | 15pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | MELF | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 2A DO214AA |
21.048 |
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- | Standard | 200V | 2A | 900mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 2µA @ 200V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 3A SOD123W |
119.424 |
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- | Schottky | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 200V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1A SOD123W |
7.686 |
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- | Standard | 800V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 800V | 7pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1.5A DO214AC |
4.230 |
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- | Standard | 100V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 10A DO214AB |
15.300 |
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- | Standard | 600V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 600V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 2A DO204AC |
6.462 |
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- | Standard | 200V | 2A | 1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 35pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 10A DO214AB |
6.696 |
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- | Standard | 1000V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 1000V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1.5A DO214AC |
6.084 |
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- | Standard | 600V | 1.5A | 1.4V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 600V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |