Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 988/999
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Diodes Incorporated |
MOSFET N-CH 60V SOT23 |
4.572 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET N-CH 60V SOT23-3 |
6.390 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET N-CH 60V SOT523 |
6.894 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET N-CH 60V SOT523 |
7.812 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET N-CH SOT23 |
2.682 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET P-CH DFN-3 |
4.338 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET N-CH SOT23 |
3.544 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET N-CH SOT23 |
4.194 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET N-CH SOT23 |
4.680 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET N-CH SOT23 |
7.956 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET N-CH POWERDI3333-8 |
Angebot anfordern |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 100V 19A DPAK |
3.708 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 19A (Tc) | 4.5V, 10V | 74mOhm @ 19A, 10V | 2.2V @ 250µA | 40nC @ 10V | ±20V | 1nF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK (SINGLE GAUGE) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 100V 25A DPAK |
3.636 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 25A (Tc) | 4.5V, 10V | 50mOhm @ 10A, 10V | 2V @ 250µA | 35nC @ 10V | ±20V | 1.024nF @ 25V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK (SINGLE GAUGE) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL |
4.698 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 2.5V, 4.5V | 55mOhm @ 4A, 4.5V | 1.4V @ 250µA | 9nC @ 4.5V | ±8V | 640pF @ 6V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
|
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
4.932 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4V @ 250µA | 45.8nC @ 10V | ±30V | 1738pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
4.644 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4V @ 250µA | 45.8nC @ 10V | ±30V | 1738pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
|
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
3.580 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4V @ 250µA | 45.8nC @ 10V | ±30V | 1738pF @ 25V | - | 166W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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|
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
7.542 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4V @ 250µA | 45.8nC @ 10V | ±30V | 1738pF @ 25V | - | 166W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL |
7.650 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 22A (Tc) | 4.5V, 10V | 140mOhm @ 20A, 10V | 3V @ 250µA | 42nC @ 10V | ±25V | 2250pF @ 30V | - | 48W (Tc) | 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL |
2.322 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 22A (Tc) | 4.5V, 10V | 140mOhm @ 20A, 10V | 3V @ 250µA | 42nC @ 10V | ±25V | 2250pF @ 30V | - | 125W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
4.770 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 23mOhm @ 20A, 10V | 2.5V @ 250µA | 28nC @ 10V | ±20V | 1680pF @ 25V | - | 42W (Tc) | 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
4.284 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 23mOhm @ 20A, 10V | 2.5V @ 250µA | 28nC @ 10V | ±20V | 1680pF @ 25V | - | 104W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
3.454 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4.5V, 10V | 34mOhm @ 15A, 10V | 2.5V @ 250µA | 16.6nC @ 10V | ±20V | 1180pF @ 30V | - | 27W (Tc) | 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
5.544 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4.5V, 10V | 34mOhm @ 15A, 10V | 2.5V @ 250µA | 16.6nC @ 10V | ±20V | 1180pF @ 30V | - | 66W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL |
2.808 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4.5V, 10V | 48mOhm @ 8A, 10V | 2.2V @ 250µA | 22.4nC @ 10V | ±20V | 1250pF @ 30V | - | 27W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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|
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL |
8.262 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4.5V, 10V | 48mOhm @ 8A, 10V | 2.2V @ 250µA | 22.4nC @ 10V | ±20V | 1250pF @ 30V | - | 66W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL |
3.526 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 18A (Tc) | 4.5V, 10V | 68mOhm @ 6A, 10V | 2.2V @ 250µA | 16.4nC @ 10V | ±20V | 870pF @ 30V | - | 17W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
|
|
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL |
4.734 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 18A (Tc) | 4.5V, 10V | 68mOhm @ 6A, 10V | 2.2V @ 250µA | 16.4nC @ 10V | ±20V | 870pF @ 30V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Micro Commercial Co |
TRANS NPN TO-92 |
2.790 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA | 10V | 5Ohm @ 500mA, 10V | 3V @ 1mA | - | ±20V | 60pF @ 25V | - | 625mW (Ta) | -55°C ~ 150°C | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Infineon Technologies |
MOSFET N-CH D2PAK |
5.382 |
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