Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 989/999
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Hersteller |
Beschreibung |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET P-CH 60V TO252-3 |
3.186 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 6.5A (Tc) | 4.5V, 10V | 250mOhm @ 6.5A, 10V | 2V @ 270µA | 13.8nC @ 10V | ±20V | 420pF @ 30V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V TO252-3 |
6.768 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V TO252-3 |
7.686 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V TO252-3 |
3.636 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 22A (Tc) | 10V | 65mOhm @ 22A, 10V | 4V @ 1.04mA | 39nC @ 10V | ±20V | 1600pF @ 30V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V TO252-3 |
4.824 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V SOT223-3 |
5.238 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET P-CH 60V SOT223-3 |
4.590 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 1.9A (Ta) | 4.5V, 10V | 250mOhm @ 1.9A, 10V | 2V @ 270µA | 13.9nC @ 10V | ±20V | 420pF @ 30V | - | 1.8W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET P-CH 60V SOT223-3 |
4.878 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET P-CH TO252-3 |
5.760 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 35A (Tc) | 10V | 38mOhm @ 35A, 10V | 4V @ 1.7mA | 63nC @ 10V | ±20V | 2500pF @ 30V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH TO252-3 |
6.912 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 22A (Tc) | 10V | 65mOhm @ 22A, 10V | 4V @ 1.04mA | 39nC @ 10V | ±20V | 1600pF @ 30V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH TO252-3 |
5.544 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 16.4A (Tc) | 10V | 90mOhm @ 16.4A, 10V | 4V @ 710µA | 27nC @ 10V | ±20V | 1100pF @ 30V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH TO252-3 |
7.596 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 6.5A (Tc) | 4.5V, 10V | 250mOhm @ 6.5A, 10V | 2V @ 270µA | 13.8nC @ 10V | ±20V | 420pF @ 30V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH TO252-3 |
8.496 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 6.5A (Tc) | 10V | 250mOhm @ 6.5A, 10V | 4V @ 270µA | 10.6nC @ 10V | ±20V | 420pF @ 30V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH SOT223-3 |
7.146 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET P-CH SOT223-3 |
6.192 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET P-CH SOT223-3 |
5.940 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-SOT223 | TO-261-3 |
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Central Semiconductor Corp |
MOSFET TRANSISTOR N-CH CHIP |
7.938 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Central Semiconductor Corp |
MOSFET TRANSISTOR N-CH CHIP |
5.184 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Central Semiconductor Corp |
MOSFET TRANSISTOR N-CH CHIP |
5.562 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Central Semiconductor Corp |
MOSFET TRANSISTOR N-CH CHIP |
5.454 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Central Semiconductor Corp |
MOSFET TRANSISTOR N-CH CHIP |
5.238 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET P-CH TO-220 |
6.588 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Central Semiconductor Corp |
MOSFET P-CH 30V |
8.352 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.4A (Ta) | 2.5V, 4.5V | 91mOhm @ 1.2A, 4.5V | 1.4V @ 250µA | 9.6nC @ 5V | 12V | 800pF @ 10V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Central Semiconductor Corp |
MOSFET P-CH 30V |
2.916 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.4A (Ta) | 2.5V, 4.5V | 91mOhm @ 1.2A, 4.5V | 1.4V @ 250µA | 9.6nC @ 5V | 12V | 800pF @ 10V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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ON Semiconductor |
MOSFET N-CH 60V SOT-23 |
3.654 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 115mA (Tc) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 50pF @ 25V | - | 225mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 60V SOT-23 |
3.348 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 115mA (Tc) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 50pF @ 25V | - | 225mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 40V 5X6 DFN |
3.798 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Alpha & Omega Semiconductor |
MOSFET N-CH 5X6 DFN |
8.964 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V TO-220 |
4.734 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 8DFN |
2.052 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta), 170A (Tc) | 4.5V, 10V | 2.3mOhm @ 20A, 10V | 2.4V @ 250µA | 100nC @ 10V | ±20V | 5200pF @ 15V | - | 2.3W (Ta), 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (5x6) | 8-PowerVDFN |