Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 990/999
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 100V 67A TO263-3 |
2.556 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 20V 20A 8-SOIC |
6.840 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 30V 65A DPAK |
8.424 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH |
4.680 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH |
4.392 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
TRANSISTOR NPN |
2.412 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
TRANSISTOR NPN |
5.418 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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ON Semiconductor |
MOSFET N-CH 40V 7.6A DPAK |
2.394 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 50V 200MA SOT-23-3 |
7.416 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET P-CH 50V 130MA SOT-23-3 |
8.856 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET P-CH 40V 10.8A DPAK |
6.102 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 100V DPAK-3 |
8.244 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET P-CH 12V SOT-363 |
2.646 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NXP |
MOSFET N-CH 100V 17A TO220AB |
6.570 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 10V | 110mOhm @ 9A, 10V | 4V @ 1mA | 40nC @ 10V | ±20V | 633pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 100V 23A TO220AB |
2.682 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 77mOhm @ 17A, 10V | 4V @ 1mA | 65nC @ 10V | ±20V | 1187pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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NXP |
MOSFET N-CH 200V 16A TO220AB |
4.176 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 16A (Tc) | 10V | 180mOhm @ 8A, 10V | 4V @ 1mA | 63nC @ 10V | ±20V | 1850pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 200V 300MA SOT54 |
5.490 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 300mA (Ta) | 2.8V | 5Ohm @ 100mA, 2.8V | 1.8V @ 1mA | - | ±20V | 120pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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NXP |
MOSFET N-CH 200V 300MA SOT54 |
6.894 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 300mA (Ta) | 2.8V | 5Ohm @ 100mA, 2.8V | 1.8V @ 1mA | - | ±20V | 120pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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NXP |
MOSFET N-CH 250V 310MA SOT54 |
8.748 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 310mA (Ta) | 2.4V, 10V | 5Ohm @ 300mA, 10V | 2V @ 1mA | - | ±20V | 120pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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NXP |
MOSFET N-CH 250V 310MA SOT54 |
8.784 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 310mA (Ta) | 2.4V, 10V | 5Ohm @ 300mA, 10V | 2V @ 1mA | - | ±20V | 120pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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NXP |
MOSFET N-CH 300V 300MA SOT54 |
4.356 |
|
- | N-Channel | MOSFET (Metal Oxide) | 300V | 300mA (Ta) | 2.4V, 10V | 6Ohm @ 250mA, 10V | 2V @ 1mA | - | ±20V | 120pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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NXP |
MOSFET P-CH 250V 0.2A SOT54 |
5.004 |
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- | P-Channel | MOSFET (Metal Oxide) | 250V | 200mA (Ta) | 10V | 15Ohm @ 200mA, 10V | 2.8V @ 1mA | - | 20V | 90pF @ 25V | - | 1W (Ta) | 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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NXP |
MOSFET P-CH 300V 0.17A SOT54 |
3.690 |
|
- | P-Channel | MOSFET (Metal Oxide) | 300V | 170mA (Ta) | 10V | 17Ohm @ 170mA, 10V | 2.55V @ 1mA | - | ±20V | 90pF @ 25V | - | 1W (Ta) | -65°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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NXP |
MOSFET N-CH 100V 190MA SOT54 |
4.428 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 190mA (Ta) | 5V | 10Ohm @ 150mA, 5V | 3.5V @ 1mA | - | 20V | 40pF @ 10V | - | 830mW (Ta) | 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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NXP |
MOSFET N-CH 30V 75A TO220AB |
8.676 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 10V | 5mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 6000pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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NXP |
MOSFET N-CH 55V 75A TO220AB |
2.376 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 11mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 3093pF @ 25V | - | 166W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
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NXP |
MOSFET N-CH 55V 73A TO220AB |
7.560 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 73A (Tc) | 10V | 14mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 2464pF @ 25V | - | 166W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
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NXP |
MOSFET N-CH 55V 40A TO220AB |
5.562 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 40A (Tc) | 10V | 28mOhm @ 20A, 10V | 4V @ 1mA | - | ±16V | 1300pF @ 25V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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|
NXP |
MOSFET N-CH 100V 37A TO220AB |
8.262 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 37A (Tc) | 10V | 40mOhm @ 40A, 10V | 4V @ 1mA | - | ±20V | 2293pF @ 25V | - | 138W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 55V 19.7A TO220AB |
6.264 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 19.7A (Tc) | 10V | 75mOhm @ 10A, 10V | 4V @ 1mA | - | ±16V | 500pF @ 25V | - | 61W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |