Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 948/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Alpha & Omega Semiconductor |
MOSFET N-CH |
7.164 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 12A |
4.104 |
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AlphaMOS | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 12A (Tc) | 4.5V, 10V | 10.5mOhm @ 12A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 600pF @ 15V | - | 4.1W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerVDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 15A 8DFN |
7.668 |
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SRFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 13.5A (Ta), 36A (Tc) | 4.5V, 10V | 10mOhm @ 13A, 10V | 2.1V @ 250µA | 24nC @ 10V | ±12V | 1400pF @ 15V | Schottky Diode (Body) | 3.1W (Ta), 23W (Tc) | -55°C ~ 155°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerVDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 75A 8DFN |
5.688 |
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AlphaMOS | N-Channel | MOSFET (Metal Oxide) | 30V | 36A (Ta), 75A (Tc) | 4.5V, 10V | 1.85mOhm @ 20A, 10V | 2V @ 250µA | 100nC @ 10V | ±12V | 5200pF @ 15V | - | 4.2W (Ta), 34W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3.3x3.3) | 8-PowerWDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 10A TO-220 |
2.646 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4.5V @ 250µA | 40nC @ 10V | ±30V | 1600pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 4.7A TO220 |
8.820 |
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SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 4.7A (Ta), 42A (Tc) | 7V, 10V | 37mOhm @ 20A, 10V | 4V @ 250µA | 23nC @ 10V | ±25V | 1450pF @ 50V | - | 1.92W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 75V 9A TO220 |
5.616 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 9A (Ta), 127A (Tc) | 10V | 11.3mOhm @ 30A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 3370pF @ 30V | - | 1.9W (Ta), 417W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 5A TO-220 |
8.460 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | 4.5V @ 250µA | 19nC @ 10V | ±30V | 620pF @ 25V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 8A TO220 |
5.292 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 8A (Tc) | 10V | 1.15Ohm @ 4A, 10V | 4.5V @ 250µA | 28nC @ 10V | ±30V | 1400pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 800V 7.4A TO220 |
8.298 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 7.4A (Tc) | 10V | 1.63Ohm @ 4A, 10V | 4.5V @ 250µA | 32nC @ 10V | ±30V | 1650pF @ 25V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 10A TO220F |
8.604 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4.2V @ 250µA | 35nC @ 10V | ±30V | 1240pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 10A TO220F |
7.488 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4.5V @ 250µA | 40nC @ 10V | ±30V | 1600pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 10A TO220F |
5.652 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4.5V @ 250µA | 40nC @ 10V | ±30V | 1600pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 10A TO220F |
6.588 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4.5V @ 250µA | 40nC @ 10V | ±30V | 1600pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 10A TO220F |
6.696 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 700mOhm @ 5A, 10V | 5V @ 250µA | 35nC @ 10V | ±30V | 1346pF @ 100V | - | 43W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 12A TO220F |
8.316 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 2A TO220F |
4.158 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.4Ohm @ 1A, 10V | 4.5V @ 250µA | 11.4nC @ 10V | ±30V | 325pF @ 25V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 2A TO251 |
4.860 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.4Ohm @ 1A, 10V | 4.5V @ 250µA | 11nC @ 10V | ±30V | 325pF @ 25V | - | 56.8W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | TO-251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 2.5A IPAK |
8.892 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2.5A (Tc) | 10V | 3.5Ohm @ 1.25A, 10V | 4.5V @ 250µA | 12nC @ 10V | ±30V | 370pF @ 25V | - | 56.8W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | TO-251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Alpha & Omega Semiconductor |
MOSFET N-CH |
3.618 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 50V 100MA USM |
6.336 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 25V 25A |
2.772 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 25A (Ta) | 4.5V, 10V | 2.7mOhm @ 25A, 10V | 2.35V @ 100µA | 53nC @ 4.5V | ±20V | 5305pF @ 13V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 18A |
6.192 |
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FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 18A (Ta), 105A (Tc) | 10V | 6mOhm @ 50A, 10V | 3.6V @ 150µA | 50nC @ 10V | ±20V | 2116pF @ 50V | - | 3.8W (Ta), 132W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Central Semiconductor Corp |
MOSFET N-CH 20V 1A |
6.048 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 1A (Ta) | 1.5V, 4.5V | 100mOhm @ 500mA, 4.5V | 1.2V @ 1mA | 2.4nC @ 4.5V | 8V | 220pF @ 10V | - | 1.6W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM621H | 6-XFDFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 200V 14.5A TO262-3 |
4.860 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 14.5A (Tc) | 5V | 200mOhm @ 9A, 5V | 4V @ 1mA | - | ±20V | 1120pF @ 25V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
4.680 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 330mOhm @ 4.5A, 10V | 4.5V @ 370µA | 22nC @ 10V | ±20V | 1010pF @ 100V | - | 93W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
8.856 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 4.5V @ 200µA | 12nC @ 10V | ±20V | 557pF @ 100V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
2.106 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 95mOhm @ 11.8A, 10V | 4V @ 590µA | 45nC @ 10V | ±20V | 2140pF @ 400V | - | 128W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
7.596 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 18A (Ta) | 10V | 125mOhm @ 8.9A, 10V | 4V @ 440µA | 35nC @ 10V | ±20V | 1670pF @ 400V | - | 101W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 8TDSON |
7.920 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 2.4mOhm @ 50A, 10V | 4V @ 80µA | 105nC @ 10V | ±20V | 8100pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-23 | 8-PowerVDFN |