Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 949/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 8TDSON |
4.698 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 10V | 6mOhm @ 30A, 10V | 4V @ 30µA | 33nC @ 10V | ±20V | 2650pF @ 25V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-23 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 8TDSON |
2.304 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 5.6mOhm @ 30A, 10V | 2.2V @ 30µA | 43nC @ 10V | ±16V | 3600pF @ 25V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-23 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 8TDSON |
2.430 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 3.3mOhm @ 40A, 10V | 4V @ 60µA | 71nC @ 10V | ±20V | 5720pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-23 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 650V 10.1A TO252 |
2.754 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 10.1A (Tc) | 10V | 650mOhm @ 2.1A, 10V | 3.5V @ 0.21mA | 23nC @ 10V | ±20V | 440pF @ 100V | Super Junction | 86W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH TO262-3 |
4.554 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 3.8mOhm @ 100A, 10V | 4V @ 340µA | 205nC @ 10V | ±20V | 14790pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET P-CH TO262-3 |
7.020 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 3.4mOhm @ 100A, 10V | 2.2V @ 340µA | 234nC @ 10V | ±16V | 15000pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH TO262-3 |
6.678 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 72A (Tc) | 10V | 9.4mOhm @ 70A, 10V | 4V @ 120µA | 70nC @ 10V | ±20V | 4810pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET P-CH TO262-3 |
6.588 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 10V | 5mOhm @ 80A, 10V | 4V @ 253µA | 130nC @ 10V | ±20V | 10300pF @ 25V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET P-CH TO262-3 |
8.892 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 5.2mOhm @ 80A, 10V | 4V @ 250µA | 151nC @ 10V | ±20V | 10300pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET P-CH TO262-3 |
5.382 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 7.7mOhm @ 80A, 10V | 4V @ 150µA | 89nC @ 10V | ±20V | 6085pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET P-CH TO262-3 |
6.786 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 4.7mOhm @ 80A, 10V | 2.2V @ 250µA | 176nC @ 10V | +5V, -16V | 3800pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET P-CH TO262-3 |
6.444 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 6.7mOhm @ 80A, 10V | 2.2V @ 150µA | 104nC @ 10V | +5V, -16V | 6580pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET P-CH TO262-3 |
7.416 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 8.2mOhm @ 80A, 10V | 2.2V @ 120µA | 92nC @ 10V | +5V, -16V | 5430pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 8TSON |
3.132 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 600V | 2.3A (Tc) | 10V | 2.1Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7nC @ 10V | ±20V | 140pF @ 100V | - | 21.6W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | Thin-PAK (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 4VSON |
8.586 |
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CoolMOS™ E6 | N-Channel | MOSFET (Metal Oxide) | 650V | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 3.5V @ 700µA | 73nC @ 10V | ±20V | 1620pF @ 100V | - | 151W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH 4VSON |
8.820 |
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CoolMOS™ E6 | N-Channel | MOSFET (Metal Oxide) | 650V | 13.1A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 3.5V @ 400µA | 45nC @ 10V | ±20V | 950pF @ 100V | - | 104W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | Thin-Pak (8x8) | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH 4VSON |
4.176 |
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CoolMOS™ E6 | N-Channel | MOSFET (Metal Oxide) | 650V | 10.1A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 3.5V @ 300µA | 39nC @ 10V | ±20V | 710pF @ 100V | - | 83W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | Thin-Pak (8x8) | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH 4VSON |
3.672 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 8.3A (Tc) | 10V | 460mOhm @ 3.4A, 10V | 4.5V @ 300µA | 31.5nC @ 10V | ±20V | 870pF @ 100V | - | 83.3W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | Thin-Pak (8x8) | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH 4VSON |
5.202 |
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CoolMOS™ E6 | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 660mOhm @ 2.1A, 10V | 3.5V @ 200µA | 23nC @ 10V | ±20V | 440pF @ 100V | - | 63W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | Thin-Pak (8x8) | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH 4VSON |
4.194 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 5.8A (Tc) | 10V | 725mOhm @ 2.1A, 10V | 4.5V @ 200µA | 20nC @ 10V | ±20V | 615pF @ 100V | - | 62.5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | Thin-Pak (8x8) | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH TO220-3 |
7.146 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 3.8mOhm @ 100A, 10V | 4V @ 340µA | 205nC @ 10V | ±20V | 14790pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V TO-220-3 |
3.222 |
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Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 6A (Tc) | 10V | 660mOhm @ 3.2A, 10V | 4.5V @ 200µA | 20nC @ 10V | ±20V | 543pF @ 100V | - | 62.5W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH TO220-3 |
8.622 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 10V | 5mOhm @ 80A, 10V | 4V @ 253µA | 130nC @ 10V | ±20V | 10300pF @ 25V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH TO220-3 |
3.996 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 7.7mOhm @ 80A, 10V | 4V @ 150µA | 89nC @ 10V | ±20V | 6085pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH TO220-3 |
3.798 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 4.7mOhm @ 80A, 10V | 2.2V @ 250µA | 176nC @ 10V | +5V, -16V | 3800pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH TO220-3 |
5.958 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 6.7mOhm @ 80A, 10V | 2.2V @ 150µA | 104nC @ 10V | +5V, -16V | 6580pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH TO220-3 |
4.536 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 8.2mOhm @ 80A, 10V | 2.2V @ 120µA | 92nC @ 10V | +5V, -16V | 5430pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO-251-3 |
2.556 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 600V | 3.2A (Tc) | 10V | 1.4Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | ±20V | 200pF @ 100V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V TO247-4 |
2.592 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 77.5A (Tc) | 10V | 41mOhm @ 35.5A, 10V | 4.5V @ 2.96mA | 170nC @ 10V | ±20V | 8180pF @ 100V | - | 481W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 600V TO247-4 |
3.400 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 37.9A (Tc) | 10V | 99mOhm @ 14.5A, 10V | 4.5V @ 1.21mA | 70nC @ 10V | ±20V | 3330pF @ 100V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |