Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 952/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 100V DIE ON WAFER |
3.580 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 100V 20A 5DFN |
7.884 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | - | 4.5V, 10V | 4mOhm @ 20A, 10V | 3V @ 250µA | 9.4nC @ 10V | ±16V | 5320pF @ 25V | - | 3.9W (Ta), 198W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 100V 20A 5DFN |
5.832 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | - | 4.5V, 10V | 4mOhm @ 20A, 10V | 3V @ 250µA | 9.4nC @ 10V | ±16V | 5320pF @ 25V | - | 3.9W (Ta), 198W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 100V 20A 5DFN |
4.896 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | - | 4.5V, 10V | 4mOhm @ 20A, 10V | 3V @ 250µA | 9.4nC @ 10V | ±16V | 5320pF @ 25V | - | 3.9W (Ta), 198W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 100V 20A 5DFN |
7.632 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | - | 4.5V, 10V | 4mOhm @ 20A, 10V | 3V @ 250µA | 9.4nC @ 10V | ±16V | 5320pF @ 25V | - | 3.9W (Ta), 198W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 100V 17A 5DFN |
4.896 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | - | 4.5V, 10V | 5.6mOhm @ 20A, 10V | 3V @ 250µA | 6.8nC @ 10V | ±16V | 3980pF @ 25V | - | 3.8W (Ta), 165W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 100V 17A 5DFN |
3.996 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | - | 4.5V, 10V | 5.6mOhm @ 20A, 10V | 3V @ 250µA | 6.8nC @ 10V | ±16V | 3980pF @ 25V | - | 3.8W (Ta), 165W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 100V 17A 5DFN |
3.816 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | - | 4.5V, 10V | 5.6mOhm @ 20A, 10V | 3V @ 250µA | 6.8nC @ 10V | ±16V | 3980pF @ 25V | - | 3.8W (Ta), 165W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 100V 17A 5DFN |
5.328 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | - | 4.5V, 10V | 5.6mOhm @ 20A, 10V | 3V @ 250µA | 6.8nC @ 10V | ±16V | 3980pF @ 25V | - | 3.8W (Ta), 165W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 100V 11A 5DFN |
2.538 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 11A (Ta), 55A (Tc) | 4.5V, 10V | 13mOhm @ 20A, 10V | 3V @ 250µA | 8nC @ 4.5V | ±16V | 1680pF @ 25V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 100V 11A 5DFN |
4.932 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 11A (Ta), 55A (Tc) | 4.5V, 10V | 13mOhm @ 20A, 10V | 3V @ 250µA | 8nC @ 4.5V | ±16V | 1680pF @ 25V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET NCH 100V 58A PQFN |
7.524 |
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Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 58A (Tc) | 10V | 14.5mOhm @ 35A, 10V | 4V @ 100µA | 74nC @ 10V | ±20V | 3050pF @ 25V | - | 4.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET NCH 100V 23A PQFN |
4.266 |
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FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 23A (Ta), 157A (Tc) | 10V | 3.9mOhm @ 50A, 10V | 3.6V @ 250µA | 74nC @ 10V | ±20V | 3120pF @ 50V | - | 4W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET NCH 100V 128A TO247AC |
5.976 |
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Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 128A (Tc) | 10V | 6mOhm @ 77A, 10V | 4V @ 150µA | 188nC @ 10V | ±20V | 7120pF @ 50V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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ON Semiconductor |
MOSFET NCH 60V 60A POWER56 |
3.222 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Tc) | 4.5V, 10V | 8.5mOhm @ 60A, 10V | 3V @ 250µA | 72nC @ 10V | ±20V | 3695pF @ 30V | - | 150W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Microsemi |
POWER MOSFET - SIC |
7.434 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 25A (Tc) | 20V | 175mOhm @ 10A, 20V | 2.5V @ 1mA | 72nC @ 20V | +25V, -10V | - | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Microsemi |
POWER MOSFET - SIC |
6.750 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 25A (Tc) | - | 175mOhm @ 10A, 20V | 2.5V @ 1mA | 72nC @ 20V | - | - | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | D3 | D-3 Module |
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Microsemi |
POWER MOSFET - SIC |
7.668 |
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- | N-Channel | SiCFET (Silicon Carbide) | 700V | 65A (Tc) | 20V | 70mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125nC @ 20V | +25V, -10V | - | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Microsemi |
POWER MOSFET - SIC |
5.076 |
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- | N-Channel | SiCFET (Silicon Carbide) | 700V | 49A (Tc) | 20V | 70mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125nC @ 20V | +25V, -10V | - | - | 165W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
POWER MOSFET - SIC |
3.852 |
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- | N-Channel | SiCFET (Silicon Carbide) | 700V | 65A (Tc) | 20V | 70mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125nC @ 20V | +25V, -10V | - | - | 220W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D3Pak | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Microsemi |
POWER MOSFET - SIC |
8.316 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 80A (Tc) | 20V | 55mOhm @ 40A, 20V | 2.5V @ 1mA | 235nC @ 20V | +25V, -10V | - | - | 555W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Microsemi |
POWER MOSFET - SIC |
6.552 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 51A (Tc) | 20V | 55mOhm @ 40A, 20V | 2.5V @ 1mA | 235nC @ 20V | +25V, -10V | - | - | 273W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
POWER MOSFET - SIC |
5.688 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 80A (Tc) | 20V | 55mOhm @ 40A, 20V | 2.5V @ 1mA | 235nC @ 20V | +25V, -10V | - | - | 625W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D3Pak | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Microsemi |
MOSFET P-CHANNEL 100V 25A TO3 |
6.282 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 25A (Tc) | 10V | 200mOhm @ 15.8A, 10V | 4V @ 250µA | - | ±20V | 3000pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3 | TO-204AA, TO-3 |
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Microsemi |
MOSFET P-CHANNEL 100V 25A TO3 |
3.798 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 25A (Tc) | 10V | 200mOhm @ 15.8A, 10V | 4V @ 250µA | - | ±20V | 3000pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3 | TO-204AA, TO-3 |
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Microsemi |
MOSFET P-CHANNEL 100V 25A TO3 |
3.996 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 25A (Tc) | 10V | 200mOhm @ 15.8A, 10V | 4V @ 250µA | - | ±20V | 3000pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3 | TO-204AA, TO-3 |
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Infineon Technologies |
MOSFET 2N-CH 20V 10A/12A 8-SOIC |
4.482 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 10A (Ta), 12A (Tc) | 10V | 13.4mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | - | 900pF @ 10V | - | 2W | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
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Infineon Technologies |
MOSFET N-CH 30V 19A 8-SOIC |
2.466 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta) | 10V | 4.5mOhm @ 19A, 10V | 2.25V @ 250µA | 44nC @ 4.5V | ±20V | 3710pF @ 15V | - | 2.5W | -55°C ~ 150°C (TA) | Surface Mount | - | - |
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Infineon Technologies |
MOSFET NCH 600V 10.6A TO252 |
2.304 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 3.5V @ 300µA | 32nC @ 10V | ±20V | 700pF @ 100V | Super Junction | 83W (Tc) | -55°C ~ 155°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET NCH 600V 3.2A TO251 |
5.004 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 3.2A (Tc) | 10V | 1.4Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | ±20V | 200pF @ 100V | Super Junction | 28.4W (Tc) | -55°C ~ 155°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |