Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 953/999
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Beschreibung |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET NCH 600V 10.6A TO252 |
3.348 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 3.5V @ 300µA | 32nC @ 10V | ±20V | 700pF @ 100V | Super Junction | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 800V TO251-3 |
5.562 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 1.9A (Tc) | 10V | 2.8Ohm @ 1.1A, 10V | 3.9V @ 120µA | 12nC @ 10V | ±20V | 290pF @ 100V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 800V TO251-3 |
7.344 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 3.9A (Tc) | 10V | 1.4Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23nC @ 10V | ±20V | 570pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 60V 37A 8WDFN |
2.880 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Ta) | 4.5V, 10V | 11.5mOhm @ 8.7A, 10V | 2.3V @ 250µA | 28nC @ 10V | ±20V | 1462pF @ 25V | - | 3.2W (Ta), 21W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET NCH 600V 4.5A TO220 |
6.642 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Ta) | 10V | 2.5Ohm @ 2A, 10V | 4.5V @ 250µA | 14.3nC @ 10V | ±30V | 532pF @ 25V | - | 113W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET NCH 600V 3A TO251 |
3.258 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 3A (Tc) | 10V | 2.5Ohm @ 2A, 10V | 4.5V @ 250µA | 14.3nC @ 10V | ±30V | 532pF @ 25V | - | 41W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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Diodes Incorporated |
MOSFET NCH 100V 28A TO252 |
7.452 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 6V, 10V | 30mOhm @ 20A, 10V | 3.5V @ 250µA | 33.3nC @ 10V | ±20V | 1871pF @ 50V | - | 2.1W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-4L | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
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Alpha & Omega Semiconductor |
MOSFET N CH 30V 18A 8SOIC |
7.236 |
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- | - | - | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH TO-263 |
8.190 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 440mOhm @ 5.5A, 10V | 5V @ 250µA | 42nC @ 10V | ±30V | 2000pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH TO-263 |
5.130 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 5V @ 250µA | 74nC @ 10V | ±30V | 3440pF @ 100V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH TO-252 |
2.790 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-252-2 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH TO-252 |
4.122 |
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- | - | - | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH TO-252 |
8.496 |
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- | - | - | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - |
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Alpha & Omega Semiconductor |
MOSFET TO-251A |
7.812 |
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SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 55A (Tc) | 4.5V, 10V | 7.3mOhm @ 20A, 10V | 2.5V @ 250µA | 26nC @ 10V | ±20V | 1450pF @ 12.5V | - | 3.2W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251A | TO-251-3 Short Leads, IPak, TO-251AA |
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Alpha & Omega Semiconductor |
MOSFET DFN 5X6 |
2.502 |
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- | - | - | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH DFN 3X3 |
2.448 |
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AlphaMOS | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Tc) | 4.5V, 10V | 8.8mOhm @ 20A, 10V | 2.5V @ 250µA | 22nC @ 10V | ±20V | 1086pF @ 15V | - | 3.1W (Ta), 23W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerVDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH TO251B |
6.606 |
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AlphaMOS | N-Channel | MOSFET (Metal Oxide) | 30V | 46A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.6V @ 250µA | 33nC @ 10V | ±20V | 1333pF @ 15V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251B | TO-251-3 Short Leads, IPak, TO-251AA |
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Transphorm |
GANFET N-CH 600V 9A TO220 |
4.752 |
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- | N-Channel | GaNFET (Gallium Nitride) | 600V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Transphorm |
GANFET N-CH 600V 9A PQFN |
8.442 |
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- | N-Channel | GaNFET (Gallium Nitride) | 600V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 4-PQFN (8x8) | 4-PowerDFN |
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Transphorm |
GANFET N-CH 600V 17A PQFN |
7.308 |
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- | N-Channel | GaNFET (Gallium Nitride) | 600V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PQFN (8x8) | 4-PowerDFN |
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Transphorm |
GANFET N-CH 650V 20A PQFN |
4.428 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14nC @ 8V | ±18V | 760pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PQFN (8x8) | 4-PowerDFN |
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Transphorm |
GANFET N-CH 600V 9A TO220 |
2.754 |
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- | N-Channel | GaNFET (Gallium Nitride) | 600V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Transphorm |
GANFET N-CH 600V 9A PQFN |
7.254 |
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- | N-Channel | GaNFET (Gallium Nitride) | 600V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN |
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Infineon Technologies |
MOSFET N-CH TO-220AB |
7.542 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 160A (Tc) | 10V | 4.2mOhm @ 75A, 10V | 4V @ 150µA | 120nC @ 10V | ±20V | 4520pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | - | - |
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Infineon Technologies |
MOSFET N-CH 16SOIC |
5.760 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 16SOIC |
6.624 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH WAFER |
8.982 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH WAFER |
8.712 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH WAFER |
4.572 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH WAFER |
2.538 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |