Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 886/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 40V 90A TO252-3 |
2.952 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 3.8mOhm @ 90A, 10V | 4V @ 45µA | 56nC @ 10V | ±20V | 4500pF @ 20V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 70A TO252-3 |
4.302 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 70A (Tc) | 4.5V, 10V | 4.2mOhm @ 70A, 10V | 2V @ 270µA | 175nC @ 10V | ±20V | 12400pF @ 15V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO252-3 |
3.472 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 5.3mOhm @ 90A, 10V | 4V @ 58µA | 82nC @ 10V | ±20V | 6600pF @ 30V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 70A TO252-3 |
3.744 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 70A (Tc) | 4.5V, 10V | 6.8mOhm @ 70A, 10V | 2V @ 150µA | 91nC @ 10V | ±20V | 7720pF @ 15V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 59A TO252-3 |
6.102 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 59A (Tc) | 6V, 10V | 12.2mOhm @ 46A, 10V | 3.5V @ 46µA | 35nC @ 10V | ±20V | 2500pF @ 50V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 28A TO252-3 |
7.434 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 28A (Tc) | 10V | 25mOhm @ 28A, 10V | 4V @ 11µA | 15nC @ 10V | ±20V | 1200pF @ 30V | - | 36W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 21A TO252-3 |
4.194 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 21A (Tc) | 8V, 10V | 53mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | ±20V | 887pF @ 75V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 8.1A TO252 |
3.564 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 8.1A (Tc) | 10V | 520mOhm @ 2.8A, 10V | 3.5V @ 230µA | 23.4nC @ 10V | ±20V | 512pF @ 100V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 6.8A TO-252 |
7.488 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 6.8A (Tc) | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 250µA | 31nC @ 10V | ±20V | 630pF @ 100V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 6.1A TO-252 |
2.196 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 6.1A (Tc) | 10V | 600mOhm @ 3.3A, 10V | 3.5V @ 220µA | 27nC @ 10V | ±20V | 550pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 10.6A TO252 |
3.960 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 10.6A (Tc) | 10V | 380mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | ±20V | 710pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 900V 5.1A TO-252 |
5.904 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 5.1A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28nC @ 10V | ±20V | 710pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO252-3 |
5.310 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 2V @ 23µA | 19nC @ 10V | ±20V | 700pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3 |
5.868 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 10V | 7.3mOhm @ 50A, 10V | 4V @ 85µA | 46.5nC @ 10V | ±20V | 2170pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 180A 2WDSON |
4.662 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 39A (Ta), 180A (Tc) | 4.5V, 10V | 1.2mOhm @ 30A, 10V | 2.2V @ 250µA | 169nC @ 10V | ±20V | 16900pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 25V 170A WDSON-2 |
6.318 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 37A (Ta), 170A (Tc) | 4.5V, 10V | 1.2mOhm @ 30A, 10V | 2V @ 250µA | 67nC @ 10V | ±20V | 4900pF @ 12V | - | 2.8W (Ta), 57W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 30V 147A 2WDSON |
4.194 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 147A (Tc) | 4.5V, 10V | 1.7mOhm @ 30A, 10V | 2.2V @ 250µA | 102nC @ 10V | ±20V | 7800pF @ 15V | - | 2.8W (Ta), 57W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET P-CH 30V 1.5A SOT363 |
2.682 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 4.5V, 10V | 140mOhm @ 1.5A, 10V | 2V @ 6.3µA | 2.9nC @ 10V | ±20V | 294pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT363-6 | 6-VSSOP, SC-88, SOT-363 |
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Infineon Technologies |
MOSFET N-CH 20V 1.4A SOT363 |
6.822 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 1.4A (Ta) | 1.8V, 2.5V | 160mOhm @ 1.4A, 2.5V | 950mV @ 3.7µA | 0.6nC @ 2.5V | ±8V | 180pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT363-6 | 6-VSSOP, SC-88, SOT-363 |
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Infineon Technologies |
MOSFET N-CH 30V 60A 2WDSON |
3.490 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 60A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.2V @ 250µA | 42nC @ 10V | ±20V | 3000pF @ 15V | - | 2.2W (Ta), 28W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 500V 400MA SOT-223 |
6.138 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 500V | 400mA (Ta) | 10V | 4Ohm @ 400mA, 10V | 4V @ 1mA | - | ±20V | 400pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 60V 2.9A SOT-223 |
5.364 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 2.9A (Ta) | 10V | 120mOhm @ 2.9A, 10V | 4V @ 20µA | 12nC @ 10V | ±20V | 340pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 400V 170MA SOT-223 |
8.910 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 400V | 170mA (Ta) | 4.5V, 10V | 25Ohm @ 170mA, 10V | 2.3V @ 94µA | 5.9nC @ 10V | ±20V | 154pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 60V 230MA SOT-23 |
4.914 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 230mA (Ta) | 0V, 10V | 3.5Ohm @ 160mA, 10V | 2.4V @ 26µA | 2.9nC @ 5V | ±20V | 44pF @ 25V | Depletion Mode | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 100V 170MA SOT-23 |
3.114 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 0V, 10V | 6Ohm @ 170mA, 10V | 1.8V @ 50µA | 2.8nC @ 7V | ±20V | 68pF @ 25V | Depletion Mode | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 200MA SOT23 |
8.856 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 2.3V @ 26µA | 1.5nC @ 10V | ±20V | 56pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 200MA SOT23 |
6.012 |
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Automotive, AEC-Q101, SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 1.8V @ 26µA | 1.5nC @ 10V | ±20V | 45pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 30V 9.4A DPAK-3 |
6.966 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9.4A (Ta), 41A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 16.5nC @ 10V | ±20V | 837pF @ 15V | - | 1.38W (Ta), 26.3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 16A SO-8FL |
8.064 |
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SENSEFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 156A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.5V @ 250µA | 86nC @ 11.5V | ±20V | 5250pF @ 12V | - | 900mW (Ta), 86.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SO-8FL | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 16A SO-8FL |
6.282 |
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SENSEFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 156A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.5V @ 250µA | 86nC @ 11.5V | ±20V | 5250pF @ 12V | - | 900mW (Ta), 86.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SO-8FL | 8-PowerTDFN |