Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 885/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223 |
2.178 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 0V, 10V | 45Ohm @ 120mA, 10V | 1V @ 94µA | 4.9nC @ 5V | ±20V | 146pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 100V 1.1A SOT-223 |
4.392 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 1.1A (Ta) | 4.5V, 10V | 700mOhm @ 1.1A, 10V | 1.8V @ 400µA | 17.2nC @ 10V | ±20V | 364pF @ 25V | - | 1.79W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 60V 2.9A SOT-223 |
7.866 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 2.9A (Ta) | 10V | 120mOhm @ 2.9A, 10V | 4V @ 20µA | 12nC @ 10V | ±20V | 340pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 100V 170MA SOT-23 |
3.400 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 4.5V, 10V | 6Ohm @ 170mA, 10V | 1.8V @ 50µA | 2.67nC @ 10V | ±20V | 69pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 40V 90A TO263-3 |
4.860 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 4.5V, 10V | 2.2mOhm @ 90A, 10V | 2V @ 95µA | 166nC @ 10V | ±20V | 13000pF @ 20V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 90A TO263-3 |
3.798 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 2.3mOhm @ 90A, 10V | 4V @ 95µA | 120nC @ 10V | ±20V | 10000pF @ 20V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 140A TO263-7 |
6.696 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 140A (Tc) | 10V | 2.3mOhm @ 100A, 10V | 4V @ 141µA | 198nC @ 10V | ±20V | 16000pF @ 30V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO263-3 |
7.398 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 3.9mOhm @ 80A, 10V | 2V @ 45µA | 78nC @ 10V | ±20V | 6100pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO263-3 |
8.586 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4.1mOhm @ 80A, 10V | 4V @ 45µA | 56nC @ 10V | ±20V | 4500pF @ 20V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO263-3 |
7.020 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 4.7mOhm @ 80A, 10V | 2.2V @ 58µA | 50nC @ 4.5V | ±20V | 8400pF @ 30V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 70A TO263-3 |
2.106 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 70A (Tc) | 10V | 5.2mOhm @ 70A, 10V | 4V @ 33µA | 42nC @ 10V | ±20V | 3300pF @ 20V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 130A TO263-7 |
3.024 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 130A (Tc) | 8V, 10V | 6.5mOhm @ 100A, 10V | 4V @ 270µA | 93nC @ 10V | ±20V | 7300pF @ 75V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 150V 100A TO263-3 |
5.832 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 100A (Tc) | 8V, 10V | 7.2mOhm @ 100A, 10V | 4V @ 270µA | 93nC @ 10V | ±20V | 5470pF @ 75V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 50A TO263-3 |
3.348 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 7.5mOhm @ 50A, 10V | 2V @ 20µA | 36nC @ 10V | ±20V | 2800pF @ 25V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 50A TO263-3 |
2.100 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 9.3mOhm @ 50A, 10V | 2V @ 16µA | 28nC @ 10V | ±20V | 2100pF @ 20V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 80V 70A TO263-3 |
2.124 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 70A (Tc) | 6V, 10V | 9.7mOhm @ 46A, 10V | 3.5V @ 46µA | 35nC @ 10V | ±20V | 2410pF @ 40V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 80V 45A TO263-3 |
6.948 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 45A (Tc) | 6V, 10V | 13.6mOhm @ 45A, 10V | 3.5V @ 33µA | 25nC @ 10V | ±20V | 1730pF @ 40V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 30A TO263-3 |
5.112 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4.5V, 10V | 23mOhm @ 30A, 10V | 2.2V @ 11µA | 10nC @ 4.5V | ±20V | 1600pF @ 30V | - | 36W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 27A TO263-3 |
5.598 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 27A (Tc) | 10V | 25.7mOhm @ 27A, 10V | 4V @ 11µA | 15nC @ 10V | ±20V | 1200pF @ 30V | - | 36W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 11A TO-263 |
3.204 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29nC @ 10V | ±20V | 1100pF @ 100V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 9A TO-263 |
3.798 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 385mOhm @ 5.2A, 10V | 3.5V @ 340µA | 22nC @ 10V | ±20V | 790pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 6.8A TO-263 |
3.384 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 6.8A (Tc) | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 250µA | 31nC @ 10V | ±20V | 630pF @ 100V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 7.3A TO263 |
7.470 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5nC @ 10V | ±20V | 440pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 4.4A TO263 |
8.514 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 130µA | 13nC @ 10V | ±20V | 280pF @ 100V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 20.2A TO263 |
2.268 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73nC @ 10V | ±20V | 1620pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 13.8A TO263 |
2.826 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 13.8A (Tc) | 10V | 280mOhm @ 4.4A, 10V | 3.5V @ 440µA | 45nC @ 10V | ±20V | 950pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 10.6A TO263 |
6.858 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 10.6A (Tc) | 10V | 380mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | ±20V | 710pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 8.7A TO263 |
5.958 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 340µA | 32nC @ 10V | ±20V | 870pF @ 100V | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 7.3A TO263 |
4.698 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23nC @ 10V | ±20V | 440pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 6A TO263 |
8.874 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 6A (Tc) | 10V | 660mOhm @ 2.1A, 10V | 4.5V @ 200µA | 22nC @ 10V | ±20V | 615pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |