Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 887/999
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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ON Semiconductor |
MOSFET N-CH 25V 15.2A SO-8FL |
8.244 |
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SENSEFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 15.2A (Ta), 149A (Tc) | 3.2V, 10V | 2.5mOhm @ 15A, 10V | 2.5V @ 250µA | 85nC @ 11.5V | ±16V | 4830pF @ 12V | - | 900mW (Ta), 86.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SO-8FL | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 25V 15.2A SO-8FL |
6.120 |
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SENSEFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 15.2A (Ta), 149A (Tc) | 3.2V, 10V | 2.5mOhm @ 15A, 10V | 2.5V @ 250µA | 85nC @ 11.5V | ±16V | 4830pF @ 12V | - | 900mW (Ta), 86.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SO-8FL | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 3.5A 6-TSOP |
5.562 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 60V 220A TO-220-3 |
7.290 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 220A (Tc) | 10V | 3mOhm @ 75A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 10760pF @ 25V | - | 283W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET P-CH 30V 3.4A 4WLCSP |
6.588 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 3.4A (Ta) | 2.5V, 4.5V | 45mOhm @ 1A, 4.5V | 1.4V @ 250µA | 20nC @ 4.5V | ±12V | 1630pF @ 15V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-WLCSP (1.6x1.6) | 4-UFBGA, WLCSP |
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Vishay Siliconix |
MOSFET N-CH 60V 90A TO220AB |
5.184 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 5mOhm @ 20A, 10V | 4.5V @ 250µA | 160nC @ 10V | ±20V | 6190pF @ 30V | - | 3.75W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 190V 0.95A SC70-6 |
3.544 |
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LITTLE FOOT® | N-Channel | MOSFET (Metal Oxide) | 190V | 950mA (Tc) | 1.8V, 4.5V | 3.8Ohm @ 360mA, 4.5V | 1.4V @ 250µA | 4.5nC @ 10V | ±16V | 90pF @ 100V | Schottky Diode (Isolated) | 1.9W (Ta), 7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual |
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Vishay Siliconix |
MOSFET N-CH 30V 60A POLARPAK |
8.460 |
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SkyFET®, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 2.4mOhm @ 25A, 10V | 3V @ 250µA | 160nC @ 10V | ±20V | 7400pF @ 15V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (L) | 10-PolarPAK® (L) |
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Vishay Siliconix |
MOSFET N-CH 250V 17A TO252 |
8.388 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 17A (Tc) | 10V | 165mOhm @ 14A, 10V | 4V @ 250µA | 42nC @ 10V | ±20V | 1950pF @ 25V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 20V 3.7A 1206-8 |
5.940 |
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LITTLE FOOT® | P-Channel | MOSFET (Metal Oxide) | 20V | 3.7A (Tc) | 1.8V, 4.5V | 144mOhm @ 2.5A, 4.5V | 1V @ 250µA | 6.8nC @ 5V | ±8V | 276pF @ 10V | Schottky Diode (Isolated) | 1.3W (Ta), 2.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET™ | 8-SMD, Flat Lead |
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Vishay Siliconix |
MOSFET N-CH 60V 60A POLARPAK |
7.218 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Tc) | 10V | 6.1mOhm @ 20A, 10V | 4.4V @ 250µA | 77nC @ 10V | ±20V | 3100pF @ 30V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (L) | 10-PolarPAK® (L) |
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Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK |
4.356 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 28mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1900pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 20V 3.1A SC70-6 |
8.100 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 3.1A (Ta) | 1.8V, 4.5V | 65mOhm @ 3.9A, 4.5V | 1.2V @ 250µA | 7.5nC @ 4.5V | ±8V | - | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |
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Vishay Siliconix |
MOSFET N-CH 30V 7.5A 8-SOIC |
6.444 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 7.5A (Ta) | 4.5V, 10V | 13.5mOhm @ 10A, 10V | 3V @ 250µA | 20nC @ 5V | ±20V | - | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 7A PPAK SC75-6L |
7.416 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 7A (Tc) | 4.5V, 10V | 40mOhm @ 6A, 10V | 2.5V @ 250µA | 9.5nC @ 10V | ±20V | 350pF @ 15V | - | 2.4W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-75-6L Single | PowerPAK® SC-75-6L |
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Vishay Siliconix |
MOSFET N-CH 600V 22A D2PAK |
3.600 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 190mOhm @ 11A, 10V | 4V @ 250µA | 110nC @ 10V | ±30V | 2810pF @ 25V | - | 250W (Tc) | - | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 22A TO220FP |
2.736 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | - | 190mOhm @ 11A, 10V | 4V @ 250µA | 110nC @ 10V | - | 2810pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET P-CH 30V TO252 |
4.914 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | - | 4.5V, 10V | 10mOhm @ 15A, 10V | 3V @ 250µA | 150nC @ 10V | ±20V | 6000pF @ 25V | - | 4W (Ta), 70W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 20V 50A TO252 |
2.520 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 50A (Tc) | 4.5V, 10V | 6mOhm @ 20A, 10V | 3V @ 250µA | 30nC @ 4.5V | ±20V | 2550pF @ 10V | - | 6.8W (Ta), 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 110A D2PAK |
8.856 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 110A (Tc) | 4.5V, 10V | 4.2mOhm @ 20A, 10V | 3V @ 250µA | 60nC @ 4.5V | ±20V | 5100pF @ 25V | - | 3.75W (Ta), 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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EPC |
GANFET TRANS 100V 11A BUMPED DIE |
8.586 |
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eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 11A (Ta) | 5V | 16mOhm @ 11A, 5V | 2.5V @ 3mA | 5.2nC @ 5V | +6V, -5V | 520pF @ 50V | - | - | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die |
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Nexperia |
MOSFET N-CH 75V 22A DPAK |
6.120 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 22A (Tc) | 4.5V, 10V | 46mOhm @ 10A, 10V | 2.8V @ 1mA | 21.4nC @ 10V | ±16V | 1280pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 30V 100A TO-220AB |
7.416 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 3.3mOhm @ 25A, 10V | 2.8V @ 1mA | 114nC @ 10V | ±16V | 6960pF @ 25V | - | 204W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 30V 120A D2PAK |
4.464 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 120A (Tc) | 10V | 1.3mOhm @ 25A, 10V | 4V @ 1mA | 154nC @ 10V | ±20V | 11960pF @ 25V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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NXP |
MOSFET N-CH 30V 120A D2PAK |
3.438 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 120A (Tc) | 5V, 10V | 1.4mOhm @ 25A, 5V | 2.1V @ 1mA | 113nC @ 5V | ±10V | 16150pF @ 25V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET N-CH 30V 7A MPT6 |
8.820 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4V, 10V | 28mOhm @ 7A, 10V | 2.5V @ 1mA | 5.8nC @ 5V | ±20V | 390pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | MPT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET P-CH 30V 7.5A MPT6 |
4.104 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 7.5A (Ta) | 4V, 10V | 21mOhm @ 7.5A, 10V | 2.5V @ 1mA | 21nC @ 5V | ±20V | 1900pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | MPT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET N-CH 30V 9A MPT6 |
6.678 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4V, 10V | 17mOhm @ 9A, 10V | 2.5V @ 1mA | 6.8nC @ 5V | ±20V | 440pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | MPT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET N-CH 30V 10A MPT6 |
6.642 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4V, 10V | 13mOhm @ 10A, 10V | 2.5V @ 1mA | 11nC @ 5V | ±20V | 800pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | MPT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET N-CH 30V 12.5A MPT6 |
7.578 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 12.5A (Ta) | 4V, 10V | 12mOhm @ 12.5A, 10V | 2.5V @ 1mA | 12.7nC @ 5V | ±20V | 1000pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | MPT6 | 6-SMD, Flat Leads |