Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 639/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 30V 61A I-PAK |
6.840 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 61A (Tc) | 2.8V, 10V | 12.5mOhm @ 15A, 10V | 2V @ 250µA | 24nC @ 4.5V | ±12V | 2417pF @ 15V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 60V 55A D2PAK |
2.610 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 55A (Tc) | 10V | 16.5mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1812pF @ 25V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 75A DPAK |
7.038 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 75A (Tc) | 2.8V, 10V | 9mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | ±12V | 2410pF @ 10V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 500V 31A TO-247AC |
2.736 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 31A (Tc) | 10V | 180mOhm @ 19A, 10V | 5V @ 250µA | 210nC @ 10V | ±30V | 5000pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET P-CH 30V 7A 8-TSSOP |
6.912 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 22mOhm @ 7A, 10V | 2.5V @ 250µA | 72nC @ 10V | ±20V | 2211pF @ 25V | - | 1.51W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Vishay Siliconix |
MOSFET N-CH 500V 47A SUPER247 |
3.006 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 47A (Tc) | 10V | 90mOhm @ 28A, 10V | 5V @ 250µA | 350nC @ 10V | ±30V | 8310pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-274AA |
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Infineon Technologies |
MOSFET P-CH 40V 6.2A 8-SOIC |
6.030 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 6.2A (Ta) | 4.5V, 10V | 41mOhm @ 6.2A, 10V | 3V @ 250µA | 80nC @ 10V | ±20V | 3220pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 500V 46A SUPER247 |
2.988 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 46A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 250µA | 380nC @ 10V | ±30V | 8110pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-274AA |
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Vishay Siliconix |
MOSFET N-CH 500V 32A TO-247AC |
7.254 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 32A (Tc) | 10V | 160mOhm @ 32A, 10V | 5V @ 250µA | 190nC @ 10V | ±30V | 5280pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 30V 61A I-PAK |
6.804 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 61A (Tc) | 4.5V, 10V | 13mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | 1990pF @ 15V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 210A TO-247AC |
6.858 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 210A (Tc) | 7V, 10V | 2.8mOhm @ 76A, 10V | 4V @ 250µA | 209nC @ 10V | ±20V | 8250pF @ 25V | - | 3.8W (Ta), 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 23A TO-247AC |
6.768 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 23A (Tc) | 10V | 235mOhm @ 14A, 10V | 5V @ 250µA | 150nC @ 10V | ±30V | 3600pF @ 25V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 20A TO-247AC |
5.886 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | - | 270mOhm @ 12A, 10V | 4V @ 250µA | 210nC @ 10V | - | 4200pF @ 25V | - | - | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 20V 75A I-PAK |
3.762 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 75A (Tc) | 2.8V, 10V | 9mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | ±12V | 2410pF @ 10V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 40V 9A 8-SOIC |
6.894 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 9A (Ta) | 4.5V, 10V | 17mOhm @ 9A, 10V | 3V @ 250µA | 23nC @ 4.5V | ±20V | 2000pF @ 20V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 62A TO-262 |
6.084 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 62A (Tc) | 2.8V, 10V | 12mOhm @ 15A, 10V | 2V @ 250µA | 24nC @ 4.5V | ±12V | 2417pF @ 15V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 10A I-PAK |
5.796 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 10A (Tc) | 4.5V, 10V | 140mOhm @ 6A, 10V | 1V @ 250µA | 7.9nC @ 5V | ±16V | 265pF @ 25V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 20V 36A DPAK |
6.966 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 36A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 3V @ 250µA | 9.7nC @ 4.5V | ±20V | 670pF @ 10V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 75A SOT223 |
2.700 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Ta) | - | 3.3mOhm @ 140A, 10V | 4V @ 250µA | 200nC @ 10V | - | 5730pF @ 25V | - | - | - | Through Hole | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 20V 36A I-PAK |
3.762 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 36A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 3V @ 250µA | 9.7nC @ 4.5V | ±20V | 670pF @ 10V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 20V 54A DPAK |
5.742 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | 1060pF @ 10V | - | 3.8W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 54A I-PAK |
4.392 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | 1060pF @ 10V | - | 3.8W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET P-CH 20V 4A 6-TSOP |
5.076 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 2.5V, 4.5V | 86mOhm @ 4A, 4.5V | 1.2V @ 250µA | 11.4nC @ 4.5V | ±20V | 594pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 20V 54A TO-220AB |
4.464 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | 1060pF @ 10V | - | 3.8W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 40V 3.4A 6-TSOP |
3.348 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 3.4A (Ta) | 4.5V, 10V | 112mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | 1110pF @ 25V | - | 2W (Ta) | - | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 150V 900MA 6TSOP |
4.500 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 900mA (Ta) | 10V | 1.2Ohm @ 540mA, 10V | 5.5V @ 250µA | 6.8nC @ 10V | ±30V | 88pF @ 25V | - | 2W (Ta) | - | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 40V 2.5A 6-TSOP |
3.580 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 2.5A (Ta) | 4.5V, 10V | 198mOhm @ 2.5A, 10V | 3V @ 250µA | 21nC @ 10V | ±20V | 680pF @ 25V | - | 2W (Ta) | - | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 30V 4A 6-TSOP |
7.758 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 4.5V, 10V | 85mOhm @ 4A, 10V | 1V @ 250µA | 17nC @ 10V | ±20V | 535pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 100V 13A I-PAK |
4.896 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 13A (Tc) | 10V | 205mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 760pF @ 25V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC |
8.964 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17nC @ 5V | ±12V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |